Method for preparing graphene through chemical vapor deposition under cold cavity wall condition

Abstract

The invention discloses a method for preparing graphene through chemical vapor deposition under a cold cavity wall condition. The method comprises the following detailed steps of: 1) placing a substrate in a sealed cavity with circulating water cooling, wherein the temperature of the cavity wall is controlled to be between the room temperature and 100 DEG C; 2) introducing carrier gas and heatingthe substrate; 3) continuously introducing carbon source-containing gas for 5 to 30 seconds; and 4) after cooling the substrate, generating the grapheme on the surface of the substrate. When the coldcavity wall chemical vapor deposition is compared with the traditional widely used hot cavity wall chemical vapor deposition, the heated area is only limited to the substrate and the other parts of the cavity are cooled, so that the decomposition of the carbon source-containing gas can be reduced, the growing thickness of the grapheme is precisely controlled, and carbon can deposit on the surfaceof the substrate in a form of a single atom layer to generate the single-layer grapheme. The grapheme prepared by the method has the advantages of good uniformity, large area, few defects, excellent electricity conductivity, good mechanical properties and the like.

Description

technical field [0001] The invention relates to a method for preparing graphene, more specifically a method for directly preparing graphene by chemical vapor deposition under cold chamber wall conditions. Background technique [0002] Graphene, a new type of material with two-dimensional carbon nanostructure, shows excellent thermal, mechanical and electrical properties macroscopically due to its unique nanostructure, and has become a scientific research object in recent years. Research Hotspots 【1】 . The excellent properties shown by graphene make it have a wide range of application prospects, such as displays, solar cells and supercapacitors, etc. 【2】 . However, it is still difficult to grow large-area, high-quality graphene, which makes this material not meet the requirements of industrial applications. [0003] At present, the preparation methods of graphene at home and abroad include: redox method of graphite 【3】 , silicon sublimation method of silicon carbide 【4】...

AI Technical Summary

Problems solved by technology

At present, the preparation of graphene by chemical vapor deposition mostly adopts the hot wall method, that is, the synthesis of graphene occurs in a quartz tube furnace. 【7】-【10】 , the hot chamber wall will lead to an increase in the area of ​​the heating area, resulting in the decomposition of more carbon-containing source gas, which is not conducive to the synthesis of high-quality graphene; secondly, the carbon-containing source gas decomposed near the hot wall is adsorbed on the hot wall to form Carbon particles, carbon particles fall on the surface of the substrate where graphene grows, affecting the growth quality of graphene

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