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Preparation method of injector-shaped ZnO nanostructural array for field emission

A nanostructure and nanopillar array technology is applied in the field of preparation of a syringe-like ZnO nanostructure array for field emission, which can solve the problem that the aspect ratio of the tip portion of the one-dimensional ZnO nanostructure is difficult to implement effectively control, difficult to scale industrial production, High reaction temperature and other problems, to achieve the effect of easy industrial-scale implementation, improved electrical conductivity, and simple and easy operation

Inactive Publication Date: 2011-05-18
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these methods usually require high reaction temperature and long reaction time, high cost, low efficiency, and difficult to large-scale industrial production; or the prepared array structure is difficult to separate from the template, resulting in poor electrical contact with the substrate, Difficulty obtaining ideal field emission performance
In addition, these synthesis methods are also difficult to effectively control the aspect ratio of the tip part of the one-dimensional ZnO nanostructure.

Method used

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  • Preparation method of injector-shaped ZnO nanostructural array for field emission
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  • Preparation method of injector-shaped ZnO nanostructural array for field emission

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Experimental program
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Effect test

Embodiment 1

[0024] (1) Dissolve analytically pure zinc nitrate hexahydrate in distilled water and keep stirring to prepare Zn 2＋ A clear solution with a concentration of 0.005 mol / L, and the pH of the solution is controlled at 5.0±0.1 with NaOH or HCl, and the resulting solution is recorded as A;

[0025] (2) Using the A solution prepared above as the electrolyte, a three-electrode electrochemical deposition system (conductive glass as the working electrode, a platinum electrode as the counter electrode, and a saturated calomel electrode as the reference electrode) was used to directly grow ZnO on the conductive glass substrate. Nanopillar array; the deposition potential used is -0.5 V, the electrolyte temperature is 50 °C, and the deposition time is 30 min;

[0026] (3) Dissolve analytically pure zinc nitrate hexahydrate, hexamethylenetetramine and sodium fluoride in turn in a beaker containing distilled water, and keep stirring. The molar concentration ratio of the three is 1:1:1, wh...

Embodiment 2

[0031] (1) Dissolve analytically pure zinc nitrate hexahydrate in distilled water and keep stirring to prepare Zn 2＋ A clear solution with a concentration of 0.005 mol / L, and the pH of the solution is controlled at 5.0±0.1 with NaOH or HCl, and the resulting solution is recorded as A;

[0032] (2) Using the A solution prepared above as the electrolyte, a three-electrode electrochemical deposition system (conductive glass as the working electrode, a platinum electrode as the counter electrode, and a saturated calomel electrode as the reference electrode) was used to directly grow ZnO on the conductive glass substrate. Nanopillar array; the deposition potential used was -1.1 V, the electrolyte temperature was 50 °C, and the deposition time was 30 min;

[0033] (3) Dissolve analytically pure zinc nitrate hexahydrate, hexamethylenetetramine and sodium fluoride in turn in a beaker containing distilled water, and keep stirring. The molar concentration ratio of the three is 1:1:2,...

Embodiment 3

[0038] (1) Dissolve analytically pure zinc nitrate hexahydrate in distilled water and keep stirring to prepare Zn 2＋ A clear solution with a concentration of 0.005 mol / L, and the pH of the solution is controlled at 5.0±0.1 with NaOH or HCl, and the resulting solution is recorded as A;

[0039] (2) Using the A solution prepared above as the electrolyte, a three-electrode electrochemical deposition system (conductive glass as the working electrode, a platinum electrode as the counter electrode, and a saturated calomel electrode as the reference electrode) was used to directly grow ZnO on the conductive glass substrate. Nanopillar array; the deposition potential used was -1.5 V, the electrolyte temperature was 50 °C, and the deposition time was 30 min;

[0040] (3) Dissolve analytically pure zinc nitrate hexahydrate, hexamethylenetetramine and sodium fluoride in turn in a beaker containing distilled water, and keep stirring. The molar concentration ratio of the three is 1:1:2,...

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Abstract

The invention relates to a preparation method of an injector-shaped ZnO nano-structural array for field emission, which is a two-step synthesis method based on an aqueous solution system. The method comprises the following steps: firstly, adopting a electrochemical deposition method to directly grow a ZnO nano-column array on a conductive glass substrate; and secondly, adopting the aqueous solution chemical growing method to perform epitaxial growth of nano-needles on the original end surfaces of the ZnO nano-columns. The injector-shaped ZnO nano-structural array is prepared by the two-step synthesis method, thus the adhesive strength of the ZnO nano-structural array on the conductive substrate can be ensured, the electrical conductivity can be increased, the controllable growth of the pointed nanostructure, which is beneficial for electron emission can be realized and the field emission performance of the array structure can be improved.

Description

[0001] technical field [0002] The invention belongs to the technical field of optoelectronic materials, semiconductor materials and devices, and specifically relates to the preparation technology of ZnO nano-array structures, in particular to a preparation method of a syringe-shaped ZnO nano-structure array for field emission. [0003] Background technique [0004] ZnO is a wide bandgap II-VI semiconductor material with a bandwidth of 3.37 eV and an exciton binding energy of up to 60 meV at room temperature. It has excellent chemical properties, thermal stability, and good luminescence and photoelectric conversion properties. , making it widely used in optoelectronics, especially in nano-optoelectronic devices. Therefore, studying the growth mechanism of ZnO nanomaterials and controlling their morphology, size and scale distribution are the basis for preparing and improving functional nanodevices. So far, various ZnO nanostructures have been prepared, especially nanowire...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D9/04C30B19/12C30B29/16
Inventor 徐峰孙立涛董方洲毕恒昌尹奎波万能
Owner SOUTHEAST UNIV
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