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Gallium-molybdenum-codoped indium tin oxide ceramic target, gallium-molybdenum-codoped indium tin oxide transparent conductive film and preparation method

A technology of transparent conductive film and indium tin oxide, which is applied in the field of sputtering targets, can solve the problems of unstable ITO conductive film, failure to meet the use requirements, low film transmittance, etc., and achieve excellent electrical and optical properties, Good weak acid etching performance and high chemical stability

Inactive Publication Date: 2011-09-14
YANGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are many problems to be solved in the ITO film, such as the high cost of the ITO material, the rare indium metal as the main raw material, and the limited stock in the earth's crust; the relatively simple structure of the ITO film makes the film transmittance lower , leading to restrictions in the application of optical devices; ITO conductive film is unstable in reducing atmosphere and relatively high humidity air environment, and cannot meet the requirements of these fields

Method used

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  • Gallium-molybdenum-codoped indium tin oxide ceramic target, gallium-molybdenum-codoped indium tin oxide transparent conductive film and preparation method
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  • Gallium-molybdenum-codoped indium tin oxide ceramic target, gallium-molybdenum-codoped indium tin oxide transparent conductive film and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] (1) Preparation of gallium molybdenum co-doped indium tin oxide (InSnGaMo) ceramic target

[0021] Each In with an average particle size of 0.5 μm 2 o 3 , SnO 2 , Ga 2 o 3 and MoO 3 The raw materials were weighed according to the mass ratio of 75:10:10:5, and then the raw materials and absolute ethanol were mixed according to the ratio of 2:3, placed on a ball mill for wet grinding for 12 hours, and then pre-synthesized at 600°C for 10 hours. After pre-synthesis, fully ball mill for 24 hours again, and the slurry is spray-dried and granulated to obtain a target material with an average particle size of 45 μm, which is molded by a powder tablet press preferably at a pressure of 5Mpa, and pressed into The green body obtained is sintered under normal pressure and air, and sintered according to the following process: keep the temperature at 600°C and 1100°C for 3 hours, sinter for 20 hours, keep the sintering temperature at 1300-1350°C during sintering, and then cool ...

Embodiment 2

[0042] (1) Preparation of gallium molybdenum co-doped indium tin oxide ceramic target material: using the method of Example 1 (1), In 2 o 3 , SnO 2 , Ga 2 o 3 and MoO 3 The mass ratio of the powder is 70:12:12:6.

[0043] The performance of gallium molybdenum co-doped indium tin oxide ceramic target was tested by the same method as in embodiment 1 (2). Table 1 shows the composition and physical properties of the ceramic targets.

[0044] (2) Preparation and evaluation of transparent gallium-molybdenum co-doped indium tin oxide conductive film: use the method of embodiment 1 (3), but what is sputtered is the ceramic target prepared in the above (1) step, thus A transparent conductive film is prepared.

[0045] The transparent conductive film was evaluated by a method similar to that in Example 1(4). The results are shown in Table 1.

Embodiment 3

[0047] (1) Preparation of gallium molybdenum co-doped indium tin oxide ceramic target material: using the method of Example 1 (1), In 2 o 3 , SnO 2 , Ga 2 o 3 and MoO 3 The mass ratio of the powder is 80:8:8:4.

[0048] The performance of the ceramic target was tested in the same manner as in Example 1 (2). Table 2 shows the composition and physical properties of the ceramic targets.

[0049] (2) Preparation and evaluation of gallium molybdenum co-doped indium tin oxide transparent conductive film: using the method of embodiment 1 (3), only the ceramic target prepared in the above (1) step was sputtered, thus A transparent conductive film is prepared.

[0050] The transparent conductive film was evaluated by a method similar to that of Example 1 (4). The results are shown in Table 2.

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Abstract

The invention discloses a gallium-molybdenum-codoped indium tin oxide ceramic target, a gallium-molybdenum-codoped indium tin oxide transparent conductive film and a preparation method. The gallium-molybdenum-codoped indium tin oxide (InSnGaMo) ceramic target is prepared as follows: mixing In2O3 powder, SnO2 powder, Ga2O3 powder and absolute ethyl alcohol, ball milling, pre-combining, ball milling again, pelleting, forming, sintering and annealing; and the gallium-molybdenum-codoped indium tin oxide (InSnGaMo) transparent conductive film is prepared as follows: arranging the gallium-molybdenum-codoped indium tin oxide (InSnGaMo) ceramic target in a pulse laser deposition device for deposition. In the invention, the preparation process is simple, the production is easy, the repeatability is good, and the production cost is lowered. The InSnGaMo ceramic target has the advantages of lower cost, higher relative density, and lower resistivity. The InSnGaMo transparent conductive film has a stable structure under high temperature, extremely low resistivity (less than 10-4Omega cm) and high light transmittance (more than 90%), good electrical and optical properties, and simultaneously has good weak acid corrosion property. The invention has wide application prospect in the transparent electronics field and novel photoelectric device field.

Description

technical field [0001] The present invention relates to a sputtering target, and the sputtering target formed by the target can be widely used in the technical fields of touch screen liquid crystal display, electroluminescent display, solar battery, thin film transistor, organic and inorganic semiconductor laser, heat insulation and energy saving glass, etc. High-performance transparent conductive films and their preparation methods. Background technique [0002] The transparent conductive oxide (Transparent Conducting Oxide: TCO) thin film refers to the high light transmittance (>80%) and resistance value (<1×10 -3 Ω·cm) a class of oxide thin film materials. At present, tin (Sn)-doped indium oxide (Indium oxide) is widely used in the world for transparent conductive films. 2 o 3 ) film (Indium Tin Oxide: ITO), because ITO film has the characteristics of high transmittance in the visible light region, strong reflection of infrared light, low resistivity, strong adhe...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/28C23C14/34C04B35/01C04B35/622
Inventor 何军辉刘振华刘拥军
Owner YANGZHOU UNIV
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