Preparation method of high-speed low-power-consumption phase change memory

A technology of phase-change memory and phase-change materials, which is applied in the field of microelectronics technology, can solve the problems of reducing operating current, reducing the size of phase-change units, and not having good consistency, so as to achieve high flexibility, low operating current, and fast effect

Active Publication Date: 2012-05-09
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Compared with the stripping process, this method has better controllability for the sidewall of the film, but the corrosion of the film material by the acid-base solution is isotropic, and it is impossible to prepare a small-sized phase change unit close to the vertical sidewall, which cannot meet the high requirements. The level of integration and the

Method used

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  • Preparation method of high-speed low-power-consumption phase change memory
  • Preparation method of high-speed low-power-consumption phase change memory
  • Preparation method of high-speed low-power-consumption phase change memory

Examples

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example 1

[0027] The structure of the phase change memory in this example is a "T" type structure, an edge contact structure, a symmetrical structure or an asymmetrical structure.

[0028] (1) Clean the substrate:

[0029] Sonicate the silicon oxide substrate in acetone for 3 minutes, wash it in absolute ethanol and deionized water, blow dry the substrate with a nitrogen gun, and bake it on a hot plate at 103 degrees Celsius to remove moisture on the substrate .

[0030] (2) Deposit metal film and insulating layer film:

[0031] Apply photoresist on the surface of a clean substrate, bake it on a hot plate at 97 degrees Celsius for 3 minutes, select the pattern required on the photolithography mask board, expose it for 30 seconds, and then bake it on a hot plate at 112 degrees Celsius for 110 seconds. After flood exposure for 30 seconds and soaking in the developer for 20 seconds, the required photoresist pattern is formed. Then use magnetron sputtering to deposit a 150nm thick TiW fi...

example 2～5

[0047] The key of the inventive method lies in steps (3) and (5), and all the other steps are basically the same as the prior art, and the metal thin film in steps (2), (7) is Pt or Au or TiW or Ag of 30nm~200nm or Cu or Al or TiN, the insulating layer film is 30nm ~ 200nm SiO 2 or Si 3 N 4 ; In the photolithography process of process step (4), the baking time is 1-10 minutes, the exposure time is 1-8 minutes, and the developing time is 1-5 minutes; removing photoresist in process step (6) is Soak in acetone for 1 to 2 hours, then sonicate for 5 to 10 minutes. The photolithography process includes optical lithography, electron beam lithography and nanoimprint lithography. The inductively coupled plasma dry etching gas contains Cl 2 , HBr, BCl 3 Mixed gas of halogen element gas such as Ar and inert gas such as Ar. The substrate can be a silicon dioxide substrate, a silicon substrate, a gallium arsenide substrate, etc.

[0048] The method of the present invention i...

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Abstract

The invention discloses a preparation method of a high-speed low-power-consumption phase change memory. In the method, a superlattice film material with rapid phase change speed and low heat conductivity is used as a phase change material, and an inductive coupling plasma dry method is used to etch the material so as to form a phase change memory unit with good appearance, steep and straight side wall and good consistency. The preparation method comprises the following steps of: (1) washing a substrate; (2) successively depositing a metal film and an insulation layer film; (3) depositing a superlattice film phase change material; (4) gluing and photoetching to form photoresist serving as an etched mask; (5) etching the superlattice film material with inductive coupling plasma etching equipment; (6) removing the etched mask; and (7) successively depositing an insulation layer film and a metal film. According to the invention, the prepared phase change memory has high speed and low power consumption through utilizing the characteristics of the inductive coupling plasma dry method etching on the superlattice phase change film material, such as anisotropism, consistency and the like; and the preparation method disclosed by the invention can be well applied to superintegrated and large-scale industrialized production.

Description

technical field [0001] The invention belongs to the technical field of microelectronic technology in microelectronics, and in particular relates to an etching process used for making a phase-change memory. Background technique [0002] Phase-change random access memory is a non-volatile storage device. The thermal effect generated by the action of current causes the phase-change material to undergo reversible transition between polycrystalline state and amorphous state. It utilizes polycrystalline state (low resistance) and amorphous state ( High resistance) to record the value "0" and "1" according to the difference in the resistance level. Phase-change random access memory not only has the advantages of non-volatility, fast speed, high reliability, low power consumption, long life, and compatibility with CMOS technology, it is suitable for being widely used in daily electronic products, and it is also anti-radiation, anti-vibration, and can realize multiple Value storage,...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH01L45/1675H01L45/141H01L45/06H01L21/38H01L45/00H10N70/231H10N70/882H10N70/063
Inventor 缪向水陈莹周文利
Owner HUAZHONG UNIV OF SCI & TECH
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