Preparation method of high-speed low-power-consumption phase change memory

Abstract

The invention discloses a preparation method of a high-speed low-power-consumption phase change memory. In the method, a superlattice film material with rapid phase change speed and low heat conductivity is used as a phase change material, and an inductive coupling plasma dry method is used to etch the material so as to form a phase change memory unit with good appearance, steep and straight side wall and good consistency. The preparation method comprises the following steps of: (1) washing a substrate; (2) successively depositing a metal film and an insulation layer film; (3) depositing a superlattice film phase change material; (4) gluing and photoetching to form photoresist serving as an etched mask; (5) etching the superlattice film material with inductive coupling plasma etching equipment; (6) removing the etched mask; and (7) successively depositing an insulation layer film and a metal film. According to the invention, the prepared phase change memory has high speed and low power consumption through utilizing the characteristics of the inductive coupling plasma dry method etching on the superlattice phase change film material, such as anisotropism, consistency and the like; and the preparation method disclosed by the invention can be well applied to superintegrated and large-scale industrialized production.

Description

technical field [0001] The invention belongs to the technical field of microelectronic technology in microelectronics, and in particular relates to an etching process used for making a phase-change memory. Background technique [0002] Phase-change random access memory is a non-volatile storage device. The thermal effect generated by the action of current causes the phase-change material to undergo reversible transition between polycrystalline state and amorphous state. It utilizes polycrystalline state (low resistance) and amorphous state ( High resistance) to record the value "0" and "1" according to the difference in the resistance level. Phase-change random access memory not only has the advantages of non-volatility, fast speed, high reliability, low power consumption, long life, and compatibility with CMOS technology, it is suitable for being widely used in daily electronic products, and it is also anti-radiation, anti-vibration, and can realize multiple Value storage,...

AI Technical Summary

Problems solved by technology

Compared with the stripping process, this method has better controllability for the sidewall of the film, but the corrosion of the film material by the acid-base solution is isotropic, and it is impossible to prepare a small-sized phase change unit close to the vertical sidewall, which cannot meet the high requirements. The level of integration and the requirement to reduce the size of the phase change unit to reduce the operating current

At the same time, the solution depth of the film material to be etched in the acid-base solution and the flow rate of the surrounding solution are different, which also leads to the lack of good consistency of the method and is not suitable for large-scale production.

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