Preparation method of high-speed low-power-consumption phase change memory

Abstract

The invention discloses a method for preparing a high-speed and low-power phase change memory. The method adopts a superlattice film material with fast phase change speed and low thermal conductivity as a phase change material, and uses inductively coupled plasma dry method to etch the materials to form phase-change memory cells with excellent morphology, steep sidewalls, and good consistency. The steps are: ①cleaning the substrate; ②depositing a metal film and an insulating layer film in sequence; ③depositing a superlattice film phase change material; ④coating and photolithography to form a photoresist as an etching mask; ⑤using inductively coupled plasma The etching equipment etches the superlattice film material; ⑥ removes the photoresist mask; ⑦ deposits the insulating layer film and the metal film in sequence. This process makes full use of the characteristics of anisotropy and consistency in the etching of superlattice phase-change thin film materials by inductively coupled plasma dry etching, so that the prepared phase-change memory has high-speed and low-power consumption performance, and can be well It is applied to high-density integration and large-scale industrial production.

Description

technical field [0001] The invention belongs to the technical field of microelectronic technology in microelectronics, and in particular relates to an etching process used for making a phase-change memory. Background technique [0002] Phase-change random access memory is a non-volatile storage device. The thermal effect generated by the action of current causes the phase-change material to undergo reversible transition between polycrystalline state and amorphous state. It utilizes polycrystalline state (low resistance) and amorphous state ( High resistance) to record the value "0" and "1" according to the difference in the resistance level. Phase-change random access memory not only has the advantages of non-volatility, fast speed, high reliability, low power consumption, long life, and compatibility with CMOS technology, it is suitable for being widely used in daily electronic products, and it is also anti-radiation, anti-vibration, and can realize multiple Value storage,...

AI Technical Summary

Problems solved by technology

Compared with the stripping process, this method has better controllability for the sidewall of the film, but the corrosion of the film material by the acid-base solution is isotropic, and it is impossible to prepare a small-sized phase change unit close to the vertical sidewall, which cannot meet the high requirements. The level of integration and the requirement to reduce the size of the phase change unit to reduce the operating current

At the same time, the solution depth of the film material to be etched in the acid-base solution and the flow rate of the surrounding solution are different, which also leads to the lack of good consistency of the method and is not suitable for large-scale production.

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