Method for preparing fullerene-like carbon-based lubrication film material

A fullerene carbon-based, lubricating film technology, applied in the direction of metal material coating process, superimposed layer plating, gaseous chemical plating, etc., can solve the practical application of limited carbon film materials, low toughness of carbon film materials, friction Reduced mechanical properties and other problems, achieve high toughness, overcome brittleness, and simple preparation process

Inactive Publication Date: 2012-05-16
LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the toughness of carbon thin film materials is low, and the environment dependence is large, and brittle fracture often occurs under high load, and the life is sh...

Method used

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  • Method for preparing fullerene-like carbon-based lubrication film material
  • Method for preparing fullerene-like carbon-based lubrication film material

Examples

Experimental program
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Effect test

Embodiment 1

[0020] A. Sample pretreatment: The stainless steel substrate polished to the mirror surface was ultrasonically cleaned with absolute alcohol, distilled water, and acetone for 10 minutes, and then dried with nitrogen and placed in the deposition chamber. Pump the air pressure in the vacuum chamber to 6×10 -3 Below Pa, feed high-purity argon until the pressure is 2.5Pa. Turn on the pulse bias power supply, adjust the voltage value to -400V, and the duty cycle to 80%, and carry out argon plasma bombardment cleaning for 10 minutes.

[0021] B. Deposit silicon transition layer: adjust the flow of argon gas to maintain the chamber pressure at 0.25Pa, turn on the intermediate frequency sputtering power supply and pulse bias power supply, adjust the sputtering current to 20A, the pulse bias voltage to -600V, and the pulse duty cycle 40%, when the thickness of the transition layer reaches 500nm, it will be turned off.

[0022] C. Depositing carbon layer: Infuse a mixed gas of high-pu...

Embodiment 2

[0024] A. Sample pretreatment: Ultrasonic cleaning of the polished cemented carbide substrate with absolute alcohol, distilled water, and acetone for 15 minutes, then blown dry with nitrogen, and placed in the deposition chamber. Pump the air pressure in the vacuum chamber to 6×10 -3 Below Pa, feed high-purity nitrogen until the pressure is 0.5Pa. Turn on the pulse bias power supply, adjust the voltage value to -1200V, and make the duty cycle 20%, and carry out argon plasma bombardment cleaning for 20 minutes.

[0025] B. Deposit silicon transition layer: adjust the flow rate of argon gas to maintain the chamber pressure at 1.0Pa, turn on the intermediate frequency sputtering power supply and pulse bias power supply, adjust the sputtering current to 3A, the pulse bias voltage to -100V, and the pulse duty cycle 50%, and turn off when the thickness of the transition layer reaches 50nm.

[0026] C. Deposit carbon layer: feed high-purity argon and methane mixed gas to maintain t...

Embodiment 3

[0028] A. Sample pretreatment: The steel ball substrate polished to the mirror surface was ultrasonically cleaned with absolute alcohol, distilled water, and acetone for 30 minutes, and then dried with nitrogen gas and placed in the deposition chamber. Pump the air pressure in the vacuum chamber to 6×10 -3 Below Pa, feed high-purity argon until the pressure is 1.0Pa. Turn on the pulse bias power supply, adjust the voltage value to -1000V, and the duty cycle to 60%, and perform argon plasma bombardment cleaning for 30 minutes.

[0029] B. Deposit silicon transition layer: adjust the flow rate of argon gas to maintain the chamber pressure at 0.5Pa, turn on the intermediate frequency sputtering power supply and pulse bias power supply, adjust the sputtering current to 8A, the pulse bias voltage to -400V, and the pulse duty cycle 80%, when the thickness of the transition layer reaches 300nm, it will be turned off.

[0030] C. Depositing carbon layer: Infuse a mixed gas of high-p...

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Abstract

The invention discloses a method for preparing a fullerene-like carbon-based lubrication film material, wherein a fullerene-like carbon-based lubrication film is prepared by adopting a pulse bias auxiliary plasma strengthening chemical vapour deposition method; and a fullerene-like nano-structure is constructed in the carbon film by adjusting and controlling a pulse duty factor. Compared with the ordinary carbon-based film material, the film material disclosed by the invention shows high toughness and low environmental dependence and has ultra-low friction coefficient and wear rate both under a dry inert environment and a high-humidity atmospheric environment; the problems of being high in brittleness and high environmental humidity influence of tribological property of the carbon-based film material are overcome; and the application range of the carbon-based lubrication film material is greatly expanded.

Description

technical field [0001] The invention relates to a preparation method of a fullerene-like carbon-based lubricating film material. Background technique [0002] As a new type of high-performance lubricating film material, carbon-based film is used as a protective film in harsh environments and in precision machinery, Microsystems, information technology, national security, space environment and other related fields have shown great application prospects as lubricating film materials. After evaluating various solid materials used in space, the Friction Laboratory of the European Space Center recommends carbon films as future space lubricating coatings. NASA is also developing the application of carbon films to space solid lubricating film materials. research work, and listed carbon thin film materials as one of the country's strategic materials in the 21st century. [0003] After decades of hard work, people have made great progress in the research of carbon films, and have d...

Claims

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Application Information

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IPC IPC(8): C23C28/00C23C16/26
Inventor 吉利李红轩陈建敏周惠娣刘晓红
Owner LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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