Zinc oxide micro-nano array and preparation method thereof

A zinc oxide array, micro-nano technology, applied in the direction of zinc oxide/zinc hydroxide, nanotechnology, etc., can solve difficult micro, nano device structure, and it is difficult to realize the controllable positioning device growth of zinc oxide nanostructure, method Limiting problems such as chemical and physical vapor deposition, to achieve the effect of wide range of uses, simple preparation process and strong operability

Inactive Publication Date: 2012-05-30
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] At present, although people have been able to synthesize zinc oxide submicron and nanostructures and zinc oxide submicron and nanowire aggregates with different shapes, the methods used are limited to chemical and physical vapor deposition, and the method of vapor deposition is difficult to achieve. Controlled Positional Device Gro

Method used

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  • Zinc oxide micro-nano array and preparation method thereof
  • Zinc oxide micro-nano array and preparation method thereof
  • Zinc oxide micro-nano array and preparation method thereof

Examples

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Example Embodiment

[0026] Example 1

[0027] This embodiment is used to illustrate the method for preparing the zinc oxide micro-nano array provided by the present invention.

[0028] 1) Preparation of precursor solution: 3 grams of Zn(NO 3 ) 2 ·6H 2 O(0.1mol / L) and 0.7g(CH 2 ) 6 N 4 (0.05mol / L) added to 100ml of deionized water, stirring continuously for at least 10 minutes until the solution is uniform;

[0029] 2) Preparation of the substrate: a silicon wafer with a smooth surface is selected as the substrate, and after ultrasonic cleaning, metal zinc is thermally evaporated on the silicon wafer, and high-temperature oxygen is introduced to react to form a zinc oxide film (the thickness of the film) After the substrate is cooled, a layer of photoresist with a thickness of 45 nanometers is sprayed on the film (MJB4 contact aligning exposure system produced by SUSS, Germany; technical indicators: a resolution of 0.7 micron and 365 nm light source, Alignment accuracy 0.5 microns), and then perform pa...

Example Embodiment

[0032] Example 2

[0033] This embodiment is used to illustrate the method for preparing the zinc oxide micro-nano array provided by the present invention.

[0034] 1) Preparation of precursor solution: 0.3 g of Zn(NO 3 ) 2 ·6H 2 O(0.01mol / L) and 0.14g(CH 2 ) 6 N 4 (0.01mol / L) Add to 100ml deionized water, keep stirring for at least 10 minutes until the solution is uniform;

[0035] 2) Preparation of the substrate: a silicon wafer with a flat and smooth surface is selected as the substrate, and after ultrasonic cleaning, a layer of zinc oxide film (with a thickness of 45 nanometers) is evaporated on the silicon wafer by magnetron sputtering; wait for the substrate to cool Afterwards, spray a layer of photoresist with a thickness of 45 nanometers (same as Example 1) on the film, and then perform partial electron beam exposure on the photoresist to obtain a hole array with an average pore diameter of 300 nanometers;

[0036] 3) Forming zinc oxide array: Put the substrate prepared in st...

Example Embodiment

[0038] Example 3

[0039] This embodiment is used to illustrate the method for preparing the zinc oxide micro-nano array provided by the present invention.

[0040] 1) Preparation of precursor solution: 3 grams of Zn(NO 3 ) 2 ·6H 2 O(0.1mol / L) and 0.14g(CH 2 ) 6 N 4 (0.01mol / L) Add to 100ml deionized water, keep stirring for at least 10 minutes until the solution is uniform;

[0041] 2) Preparation of the substrate: a silicon wafer with a smooth surface is selected as the substrate, after ultrasonic cleaning, metal zinc is thermally evaporated on the silicon wafer, and high temperature oxygen is introduced to react to form a zinc oxide film (the thickness of the film) After the substrate is cooled, a layer of photoresist with a thickness of 45 nm (same as Example 1) is sprayed on the film, and then partial electron beam exposure is performed on the photoresist to obtain an average pore diameter of 300 nm Array of holes;

[0042] 3) Form zinc oxide array: Put the substrate prepared ...

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Abstract

The invention provides a zinc oxide micro-nano array and a preparation method thereof. The method includes steps that firstly, water solution containing Zn(NO3)26H2O and (CH2)6N4 is prepared; secondly, a substrate is prepared, metal zinc is arranged on the surface of a silicon wafer by means of thermal evaporation while oxygen is fed, a zinc oxide film is formed by means of reaction, or a zinc oxide film is formed by means of evaporation by a magnetic sputtering method, after the substrate is cooled, photoresist is sprayed on the film, local electron beam lithography is carried out on the photoresist, and a channel array is obtained; and thirdly, the substrate prepared in the second step is soaked in precursor solution prepared in the first step for 1 hour to 12 hours, and then is taken out and dried by nitrogen after being cleaned, and a zinc oxide array is formed. By controlling reaction conditions, controllable regulation of the diameter of a single zinc oxide line on a zinc oxide nano harness aggregate can be realized.

Description

technical field [0001] The invention relates to a preparation method of a zinc oxide micro-nano array and a zinc oxide micro-nano array prepared by the method. Background technique [0002] ZnO is an important group II-IV direct bandgap wide bandgap semiconductor material. The energy bandgap at room temperature is 3.37eV, and the exciton binding energy is as high as 60meV (GaN is 25meV, ZnSe is 22meV), it can work effectively at room temperature (26meV) and higher temperature, and the optical gain coefficient (300cm -1 ) higher than GaN (100cm -1 ), which makes ZnO quickly become a new international hotspot in the research of short-wavelength semiconductor laser device materials after GaN. [0003] Compared with ordinary ZnO, submicron and nanoscale ZnO exhibit many excellent and special properties, such as piezoelectric properties, near-ultraviolet emission, transparent conductivity, biosafety, and adaptability. These characteristics make it have broad application prospe...

Claims

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Application Information

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IPC IPC(8): C01G9/02B82Y40/00
Inventor 李宏宇江鹏于爱芳唐浩颖
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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