Electrochemical preparation process of Cu2ZnSnS4 film

A preparation process and electrochemical technology, applied in metal material coating process, electrolytic inorganic material coating, ion implantation coating, etc., can solve the problems of complex process, deviation of components from ideal chemical ratio, lack of deep understanding of microscopic physical mechanism, etc. , to achieve the effect of simple operation
CN102492972AInactive Publication Date: 2012-06-13YUNNAN NORMAL UNIV
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
YUNNAN NORMAL UNIV
Publication Date
2012-06-13
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to an electrochemical preparation process of a Cu2ZnSnS4 film. The electrochemical preparation process is a stepwise electrochemical deposition lamination preparation process. The preparation process comprises the following specific steps of: firstly, sputtering molybdenum (Mo) as a precursor on sodium-lime glass which is used as a substrate by adopting a radio frequency (RF) magnetic control sputtering method; then depositing Cu, Sn and Zn by using an electrochemistry system to stepwise laminate so as to prepare a copper-zinc-tin (CZT) film as a prefabricated film; and finally, putting the metal prefabricated film CZT in a quartz furnace for vulcanization and annealing treatment, so as to obtain a Cu2ZnSnS4 absorption layer film. The absorption layer film is a direct band gap material; the forbidden band width of the absorption layer film is 1.5eV, thus the band gap is the optimal band gap of a uni-junction solar battery; and the light absorption coefficient of the absorption layer film is more than 10<4>cm <-1>.
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Description

Technical field:

[0001] The present invention relates to a Cu 2 ZnSnS 4 The electrochemical preparation process of the thin film is a step-by-step electrochemical deposition stacking preparation process for the light absorbing layer of the solar cell. The invention belongs to the technical field of photovoltaic cell material preparation. Background technique:

[0002] At present, two mainstream thin-film solar cell absorber materials, copper indium gallium selenide (CIGS) and cadmium telluride (CdTe), are constrained by the scarcity of raw materials, high cost, and the toxicity of constituent elements when facing large-scale production, such as In in CIGS. Metals are very expensive, and the production of Te in CdTe is limited, and there will be raw material bottlenecks when the battery power generation reaches the GW level. In addition, Cd is toxic, which further increases the difficulty of production. Therefore, it is necessary to find a better absorber semiconductor. ...

Claims

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