Electrochemical preparation process of Cu2ZnSnS4 film

A preparation process and electrochemical technology, applied in metal material coating process, electrolytic inorganic material coating, ion implantation coating, etc., can solve the problems of complex process, deviation of components from ideal chemical ratio, lack of deep understanding of microscopic physical mechanism, etc. , to achieve the effect of simple operation

Inactive Publication Date: 2012-06-13
YUNNAN NORMAL UNIV
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Problems solved by technology

[0004] Cu 2 ZnSnS 4 The preparation methods of (CZTS) thin film materials include thermal evaporation, rapid co-evaporation and radio frequency magnetron sputtering, etc. The research of this type of battery is also facing many problems and difficulties. The influence of device performance parameters is still unclear. The current research stays at the level of changing the synthesis method or composition, temperature and other conditions to synthesize the material-make the device-measure the performance parameters. Although the change of the device performance is observed, it lacks a deep understanding of the microscopic physical mechanism and the optimization of

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  • Electrochemical preparation process of Cu2ZnSnS4 film
  • Electrochemical preparation process of Cu2ZnSnS4 film
  • Electrochemical preparation process of Cu2ZnSnS4 film

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[0012] (1) Soda-lime glass substrate (10mm×10mm) was ultrasonically cleaned with detergent, distilled water, isopropanone and ethanol for 10 minutes, and then dried with nitrogen gas (flow rate 0.1m3 / h) for 5 minutes;

[0013] (2) Mask the edge of the soda-lime glass substrate with polytetrafluoroethylene (PTFE), and deposit a molybdenum layer (precursor) with a thickness of 1 μm on the substrate by radio frequency (RF) magnetron sputtering;

[0014] (3) prepare three kinds of electrolytic solutions of A, B and C respectively with deionized water and metal salt (purity is 99.99wt%): A electrolytic solution is to contain 1.5 moles of sodium hydroxide (NaOH), 50 millimoles of copper chloride ( CuCl2) and 0.1 mole sorbitol (sorbitol) alkaline solution; B electrolyte is a solution containing 0.15 mole zinc chloride (ZnCl2) and buffered by hydrogen ions with a pH value of 3; C electrolyte is a solution containing 2.25 mole hydroxide Sodium (NaOH), an alkaline solution of 55 mmoles...

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Abstract

The invention relates to an electrochemical preparation process of a Cu2ZnSnS4 film. The electrochemical preparation process is a stepwise electrochemical deposition lamination preparation process. The preparation process comprises the following specific steps of: firstly, sputtering molybdenum (Mo) as a precursor on sodium-lime glass which is used as a substrate by adopting a radio frequency (RF) magnetic control sputtering method; then depositing Cu, Sn and Zn by using an electrochemistry system to stepwise laminate so as to prepare a copper-zinc-tin (CZT) film as a prefabricated film; and finally, putting the metal prefabricated film CZT in a quartz furnace for vulcanization and annealing treatment, so as to obtain a Cu2ZnSnS4 absorption layer film. The absorption layer film is a direct band gap material; the forbidden band width of the absorption layer film is 1.5eV, thus the band gap is the optimal band gap of a uni-junction solar battery; and the light absorption coefficient of the absorption layer film is more than 10<4>cm <-1>.

Description

Technical field: [0001] The present invention relates to a Cu 2 ZnSnS 4 The electrochemical preparation process of the thin film is a step-by-step electrochemical deposition stacking preparation process for the light absorbing layer of the solar cell. The invention belongs to the technical field of photovoltaic cell material preparation. Background technique: [0002] At present, two mainstream thin-film solar cell absorber materials, copper indium gallium selenide (CIGS) and cadmium telluride (CdTe), are constrained by the scarcity of raw materials, high cost, and the toxicity of constituent elements when facing large-scale production, such as In in CIGS. Metals are very expensive, and the production of Te in CdTe is limited, and there will be raw material bottlenecks when the battery power generation reaches the GW level. In addition, Cd is toxic, which further increases the difficulty of production. Therefore, it is necessary to find a better absorber semiconductor. ...

Claims

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Application Information

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IPC IPC(8): C25D9/04C25D5/10C23C14/35C23C14/18C23C8/62
Inventor 杨培志自兴发
Owner YUNNAN NORMAL UNIV
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