Copper indium diselenide solar cell and production method thereof

Abstract

The invention discloses a copper indium diselenide solar cell and a production method thereof, wherein the solar cell comprises a substrate, a back metal electrode, a light absorption layer, a transparent electric conduction layer and a contact electrode layer, the light absorption layer comprises a plurality of copper indium gallium diselenide films or copper indium gallium diselenide sulfur compound films which have different atom ratios, different target materials can be directly sputtered into a film on the back metal electrode in a direct current or radio frequency mode during the production process, so selenylation does not need to be carried out, the copper indium diselenide solar cell is safer, has high efficiency and costs less for production, components are easy to control, crystalline phases are single, the concentration is uniform, and the conversion efficiency is also improved.

Description

technical field [0001] The invention relates to a copper indium selenium solar cell and a manufacturing method thereof. Background technique [0002] In copper indium gallium solar cells, the key lies in the process of making copper indium gallium selenide thin films or copper indium gallium selenide sulfur thin films. Usually, in the production process of copper indium gallium selenide thin films, sputtering copper indium gallium alloy targets, co-sputtering Copper gallium alloy target material and indium target material, co-sputtering copper gallium alloy target material and copper indium alloy target material, etc., to produce copper indium gallium thin film, followed by selenization step or further vulcanization to make copper indium gallium selenide Thin film or copper indium gallium selenide sulfur thin film, the process needs to pass selenium vapor, selenium hydride or hydrogen sulfide at high temperature, which are poisonous gases to the human body, and have potentia...

AI Technical Summary

Problems solved by technology

[0002] In copper indium gallium solar cells, the key lies in the process of making copper indium gallium selenide thin films or copper indium gallium selenide sulfur thin films. Usually, in the production process of copper indium gallium selenide thin films, sputtering copper indium gallium alloy targets, co-sputtering Copper gallium alloy target material and indium target material, co-sputtering copper gallium alloy target material and copper indium alloy target material, etc., to produce copper indium gallium thin film, followed by selenization step or further vulcanization to make copper indium gallium selenide Thin film or copper indium gallium selenide sulfur thin film, the process needs to pass selenium vapor, selenium hydride or hydrogen sulfide at high temperature, which are poisonous gases to the human body, and have potential industrial safety hazards during the process and mechanical maintenance

[0003] In addition, the manufacturing process of this method takes a long time and the utilization rate of materials is not high, which makes the manufacturing cost expensive. In addition, the copper indium gallium selenide thin film produced by selenization, in which the composition and crystallinity of copper, indium, gallium, and selenium The phase is not uniform, making it difficult to control the composition, and there are often Cu on the grain boundary x Se, In 2 Se 3 and other miscellaneous items, resulting in poor yield rate, thereby reducing the conversion efficiency of solar cells

[0004] Furthermore, there are also so-called copper indium gallium selenide alloy targets that use powder metallurgy to mix a single element or alloy powder evenly through ball milling and melt at high temperature to form a target. The target material of this form is easy to produce due to the lack of compounding during the sputtering process. Segregation makes the composition change with the use time, and the reproducibility of film quality is not good

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