Ferrous disulfide semiconductor film preparation method

A kind of ferrous disulfide, semiconductor technology

Active Publication Date: 2012-08-22
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Because the equipment is complex and expensive, it is not conducive to industrial mas

Method used

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  • Ferrous disulfide semiconductor film preparation method
  • Ferrous disulfide semiconductor film preparation method
  • Ferrous disulfide semiconductor film preparation method

Examples

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Embodiment 1

[0034] This embodiment illustrates a kind of ferrous disulfide provided by the invention (chemical formula is FeS 2 ) Preparation method of semiconductor thin film.

[0035] Step 1: Deposition Substrate Surface Preparation

[0036] Choose ordinary soda-lime glass of 35×25×5mm as the deposition substrate: a. Degreasing agent cleaning of the substrate: use detergent as the degreasing agent, place the glass substrate in the aqueous solution of detergent, and oscillate ultrasonically at 30°C Wash for 60 minutes. b. Alkaline cleaning of the substrate: Add 100ml of ammonia water and 100ml of deionized water into a 500ml beaker, place the glass substrate in the above solution, and clean it with ultrasonic vibration at 50°C for 30 minutes. c. Ultrasonic vibration ethanol cleaning of the substrate: Take 200ml of absolute ethanol and add it to a 500ml beaker, place the glass substrate in ethanol, and clean it by ultrasonic vibration at 40°C for 60 minutes. d. Ultrasonic vibration was...

Embodiment 2

[0046] This embodiment illustrates a kind of ferrous disulfide provided by the invention (chemical formula is FeS 2 ) Preparation method of semiconductor thin film.

[0047] Step 1: Deposition Substrate Surface Preparation

[0048] Select a molybdenum sheet of 25×25×0.2mm as the deposition substrate: a. Degreasing agent cleaning of the substrate: use acetone as the degreasing agent, add 100ml of acetone to a 200ml beaker, place the molybdenum sheet in acetone, at 50 Ultrasonic vibration cleaning at ℃ for 90 minutes. b. Alkaline cleaning of the substrate: Add 20g of sodium hydroxide and 200ml of deionized water into a 500ml beaker, place the molybdenum sheet in the above solution, and clean it with ultrasonic vibration at 60°C for 30 minutes. c. Ultrasonic vibration ethanol cleaning of the substrate: Take 200ml of absolute ethanol and add it to a 500ml beaker, place the molybdenum sheet in ethanol, and clean it by ultrasonic vibration at 50°C for 90 minutes. d. Ultrasonic vi...

Embodiment 3

[0059] This embodiment illustrates a kind of ferrous disulfide provided by the invention (chemical formula is FeS 2 ) Preparation method of semiconductor thin film.

[0060] Step 1: Deposition Substrate Surface Preparation

[0061] Select 25×25×2mm ITO conductive glass as the deposition substrate: a. Base degreasing agent cleaning: use degreasing agent as degreasing agent, add 100ml degreasing agent into a 200ml beaker, place stainless steel sheet in degreasing agent , ultrasonic cleaning at 80°C for 15 minutes. b. Alkaline cleaning of the substrate: Add 20g of sodium carbonate and 200ml of deionized water into a 500ml beaker, place the stainless steel sheet in the above solution, and clean it with ultrasonic vibration at 40°C for 25 minutes. c. Ultrasonic vibration ethanol cleaning of the substrate: Take 200ml of absolute ethanol and add it to a 500ml beaker, place the stainless steel sheet in the ethanol, and clean it by ultrasonic vibration at 70°C for 45 minutes. d. Ult...

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Abstract

The invention discloses a ferrous disulfide semiconductor film preparation method, which relates to the field of preparation of compound semiconductor films for solar cells and the like. The method includes: by an aqueous solution deposition method, using ferrous sulfate or ferrous chloride aqueous solution as cation precursor solution, and using sodium polysulfide aqueous solution as anion precursor solution; controlling immersion time of a substrate in the precursor solution and circulation times to deposit a ferrous disulfide film premade layer; and subjecting the premade layer to vulcanization heat treatment at the high temperature to obtain a ferrous disulfide film. The ferrous disulfide semiconductor film preparation method is short in procedure, low in cost, high in reproducibilityand easy in massive continuous production, and the film is controllable in component and suitable for large-area growth. The deposition substrate can be normal soda lime glass, conductive glass, flexible stainless steel plates, titanium plates, molybdenum plates or plastic plates. The film prepared by the method is controllable in thickness and component, compact and uniform in appearance, high in crystallizing performance and photoelectric property and applicable to thin film solar cells.

Description

technical field [0001] The invention discloses a method for preparing a compound semiconductor thin film, in particular to a method for preparing a ferrous disulfide semiconductor thin film; it belongs to the technical field of photoelectric materials and new energy sources. Background technique [0002] Environmental pollution and energy crisis are becoming more and more serious, forcing human beings to seek new clean and renewable energy sources. Among various green energy sources, solar energy has attracted more and more attention due to its advantages of no pollution, wide distribution and inexhaustible supply. . At present, the research and development of thin-film solar cells as the third generation of solar cells is very active, and the materials involved are also very rich. The matching degree is good, and it is a direct bandgap material with stable performance. It is a promising high-efficiency thin-film solar cell. However, Cd in CdTe is a substance harmful to th...

Claims

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Application Information

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IPC IPC(8): C01G49/12C03C17/22
Inventor 刘芳洋孙凯文苏正华蒋良兴韩自力赖延清李劼刘业翔
Owner CENT SOUTH UNIV
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