Ferrous disulfide semiconductor film preparation method
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- CENT SOUTH UNIV
- Publication Date
- 2012-08-22
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Abstract
Description
technical field
[0001] The invention discloses a method for preparing a compound semiconductor thin film, in particular to a method for preparing a ferrous disulfide semiconductor thin film; it belongs to the technical field of photoelectric materials and new energy sources. Background technique
[0002] Environmental pollution and energy crisis are becoming more and more serious, forcing human beings to seek new clean and renewable energy sources. Among various green energy sources, solar energy has attracted more and more attention due to its advantages of no pollution, wide distribution and inexhaustible supply. . At present, the research and development of thin-film solar cells as the third generation of solar cells is very active, and the materials involved are also very rich. The matching degree is good, and it is a direct bandgap material with stable performance. It is a promising high-efficiency thin-film solar cell. However, Cd in CdTe is a substance harmful to th...