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Nanocrystalline/quantum dot sensitive silicon substrate battery piece and preparation method thereof

A technology of sensitizing silicon-based and quantum dots, which is applied in the field of photoelectric materials and solar cells, can solve the problems of no obvious improvement in solar light energy absorption and conversion efficiency, increase production costs, and limit device efficiency, etc., and achieve photocurrent density and photoelectricity. Effects of increased conversion efficiency, reduced reflection loss, and improved absorption efficiency

Inactive Publication Date: 2012-10-10
SHANGHAI HONGLIXIN ENERGY TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The energy gap of crystalline silicon is 1.12eV. Absorption of solar photons above the energy gap generates hot electrons and holes. Through subsequent phonon emission, these hot carriers cool rapidly before their energy is captured, resulting in a large number of Solar energy is lost in the form of "hot electrons", limiting device efficiency
In addition, the solar panel has a certain reflection effect, and also loses part of the sunlight energy.
[0003] Battery manufacturers use technologies such as surface texturing, surface etching, passivation of the emitter area, and partition doping to treat the battery panels to improve the photoelectric conversion efficiency of photovoltaic devices and reduce light reflection losses. Although the light absorption range of the battery has expanded , but the absorption and conversion efficiency of solar energy has not been significantly improved
In addition, evaporating SiN anti-reflection passivation coating on crystalline silicon material also greatly increases the production cost

Method used

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  • Nanocrystalline/quantum dot sensitive silicon substrate battery piece and preparation method thereof
  • Nanocrystalline/quantum dot sensitive silicon substrate battery piece and preparation method thereof
  • Nanocrystalline/quantum dot sensitive silicon substrate battery piece and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] In this example, the metal source and sulfur source solutions are prepared separately, and after mixing them to make quantum dots, the pretreated silicon-based cells are quickly put into them, and the silicon-based cells are dipped and pulled in a chemical bath The surface of the battery sheet reacts to form firm and dense nanocrystals / quantum dots. The specific steps are as follows:

[0028] a. Preparation of nanocrystals / quantum dots by pre-synthesis

[0029] Prepare copper acetate [(CH3COO)2Cu.H2O] / ethanol solution with a concentration of 0.01-0.5mol / l and 0.15mol / l thioacetamide [CH3CSNH2] / ethanol solution, mix them, and stir evenly. At this time, a small amount of copper sulfide quantum dots will be generated in the solution, and these quantum dots will serve as crystal seeds for the growth of quantum dots on the surface of silicon-based cells.

[0030] b. Pretreatment of silicon-based cells

[0031] Put the silicon-based cells vertically into ethanol for ultraso...

Embodiment 2

[0036] a. Preparation of quantum dots by pre-synthesis method

[0037] Take lead acetate and thioacetamide with a concentration of 0.01-0.5mol / l as the metal source and sulfur source respectively, mix the metal source and the sulfur source into a container, add a surfactant, and stir evenly.

[0038] b. Pretreatment of silicon-based cells

[0039] First place the silicon-based cell vertically in ethanol for 2-10 minutes of ultrasonic cleaning, rinse with water, and rinse at 30-60 O Under C, wash with a mixed solution of distilled water: H2O2: ammonia water = 2:1:1-9:1:1 for 2-10 minutes, and then vertically put it into a hydrofluoric acid solution diluted to 30% with ethanol or pure water for corrosion , ultrasonic 2-10min, after taking out, rinse with ultrapure water.

[0040] c. Deposition and growth of nanocrystals / quantum dots

[0041] Put the treated silicon-based battery sheet vertically into the mixed solution of lead acetate and thioacetamide that has been unifo...

Embodiment 3

[0043] a. Preparation of quantum dots

[0044] Prepare a tin tetrachloride / ethanol solution with a concentration of 0.01-0.5mol / l, and prepare a thioacetamide / ethanol solution with a concentration of 0.01-0.15mol / l at the same time as the metal source and sulfur source respectively, and mix the metal source and sulfur source , stir well.

[0045] b. Pretreatment of silicon-based cells

[0046] Put the silicon-based cell vertically into ethanol for ultrasonic cleaning for 2-10 minutes, rinse with water, O Under C, wash with a mixed solution of distilled water: H2O2: ammonia water = 2:1:1-9:1:1 for 2-10 minutes, and then vertically put it into a hydrofluoric acid solution diluted to 30% with ethanol or pure water for corrosion. Sonicate for 2-10min, take it out, and rinse it with ultrapure water.

[0047] c. Deposition and growth of nanocrystals / quantum dots

[0048] Put the pretreated silicon-based battery sheet vertically into a uniformly mixed solution of tin tetrachlorid...

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Abstract

The invention discloses a nanocrystalline / quantum dot sensitive silicon substrate battery piece and a preparation method thereof. The nanocrystalline / quantum dot sensitive silicon substrate battery piece is characterized in that the surface of the silicon substrate battery piece is compact, nanocrystallines / quantum dots are uniformly distributed on the surface of the silicon substrate battery piece and are firmly combined with the silicon substrate battery piece; the nanocrystallines / quantum dots can be used as nano particles of a transition metal sulfur group compound of a semiconductor material. The preparation method comprises the following steps: preparing the nanocrystallines / quantum dots by means of a pre-synthesis method; pre-treating the silicon substrate battery piece; and depositing the nanocrystallines / quantum dots prepared by means of the pre-synthesis method on the silicon substrate battery. According to the nanocrystalline / quantum dot sensitive silicon substrate battery piece, the sunlight spectral absorption rate of the silicon substrate battery piece can be improved, the reflection loss is reduced, and the light current density and the photoelectrical conversion efficiency are improved substantially. The process is simple, the cost is low, the production period is short, and the nanocrystalline / quantum dot sensitive silicon substrate battery piece and the preparation method are suitable for large-scale production.

Description

technical field [0001] The invention relates to the field of photoelectric materials and solar cells, in particular to a nanocrystal / quantum dot sensitized silicon-based battery sheet and a preparation method thereof. Background technique [0002] Solar energy will become an important energy source in the future. By the end of the 21st century, renewable energy will account for more than 80% of the energy structure, and solar power will account for more than 60%. Monocrystalline silicon solar cells are called the first generation of photovoltaic devices, the highest theoretical conversion efficiency is about 31-33%, and the highest conversion efficiency in the laboratory is about 25%. The average efficiency of monocrystalline silicon solar cells produced in large quantities on the market is about 15%, which is currently the photovoltaic device with the highest conversion efficiency and the most mature technology. It occupies a dominant position in large-scale applications ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/18
CPCY02P70/50
Inventor 余锡宾贺建强
Owner SHANGHAI HONGLIXIN ENERGY TECH
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