Multi-cycle rapid thermal annealing method of amorphous silicon film

Abstract

The invention relates to a multi-cycle rapid thermal annealing method of an amorphous silicon film, belonging to the technical field of preparation technology of a polycrystalline silicon film. The method comprises the following steps of: depositing an amorphous silicon film on a common glass slide substrate by a vapor deposition method; performing rapid thermal treatment, wherein the heating rate is about 150-200 DEG C / s; after the film sample is heated to 640 DEG C from room temperature, keeping the temperature for a while, and cooling naturally; when the film temperature reaches room temperature, performing next cycle; and after rapid thermal annealing is carried out several times, crystallizing the amorphous silicon film. Through the method, a polycrystalline film with crystallization rate being about 71.9% can be prepared. Compared with the traditional solid-phase crystallization technology of an amorphous silicon film, the method provided by the invention reduces requirements on the substrate, shortens the treatment time and has the characteristics of simple preparation technology, little pollution, low cost and the like. The polycrystalline silicon film prepared by using the method provided by the invention can be applied to the manufacture field of microelectronics such as thin-film transistors and solar cells.

Description

technical field [0001] The invention relates to a multi-cycle rapid thermal annealing method for crystallizing an amorphous silicon film, which is a preparation method for crystallizing an amorphous silicon film material by a solid-phase annealing method, and belongs to the technical field of polysilicon film preparation technology. Background technique [0002] Polycrystalline silicon thin-film solar cells have been recognized by the photovoltaic industry as one of the candidates for the second-generation solar cells that can achieve high efficiency, low cost, and long life. conversion efficiency of solar cells. In addition, polysilicon thin films are also widely used in microelectronic technology fields such as image sensors and thin film transistors. [0003] The preparation methods of polysilicon thin films can be divided into two categories according to the growth process of the film: one is to directly deposit polysilicon on the preset substrate, the main methods are ...

AI Technical Summary

Problems solved by technology

The metal induction method successfully achieved low temperature (o C) The preparation of polysilicon also has defects: in the process of crystallization, the metal is easily induced into the silicon film, and the metal contaminates the silicon-based semiconductor device

Laser crystallization refers to using a very narrow laser beam as the source energy to hit the surface of the silicon film and move it to melt and crystallize different regions of the silicon film material in turn. The polycrystalline silicon film prepared by laser crystallization has uniform grains and excellent performance. However, this technology also has great disadvantages, such as expensive equipment, poor process repeatability, and difficulty in large-area preparation.

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