Graphene Nitrogen Atom Replacement Doping Method and Prepared Graphene and Application of the Method in Improving Graphene Mass Specific Capacitance

A graphene and nitrogen atom technology, which is applied in hybrid capacitor electrodes, circuits, electrical components, etc., can solve the problem that the nitrogen content of nitrogen-doped graphene is difficult to control, nitrogen-doped graphene loses its planar structure, and nitrogen-doped graphene is unstable, etc. problems, to achieve the effect of increasing the carrier concentration, avoiding chemical reagents, and avoiding pseudocapacitance

Active Publication Date: 2016-09-14
THE SIXTH ELEMENT CHANGZHOU MATERIALS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The traditional methods for preparing nitrogen-doped graphene mainly include chemical vapor deposition and arc discharge. In the process of preparing graphene, chemical vapor deposition is simultaneously injected with ammonia gas for nitrogen doping, and the maximum nitrogen content is 5%. , but can not achieve SP2 hybridization, and graphene can not be in the same plane, the obtained nitrogen-doped graphene loses the planar structure, and the doped nitrogen is unstable and easy to lose; arc discharge method in the process of preparing graphene, Nitrogen-doped graphene materials are prepared by introducing nitrogen-containing compounds such as pyridine or ammonia. The maximum nitrogen content is 1%, and it is easy to lose
The nitrogen content in nitrogen-doped graphene prepared by these two methods is not easy to control, the reaction process is complicated, the reaction conditions are harsh, and the yield is low.

Method used

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  • Graphene Nitrogen Atom Replacement Doping Method and Prepared Graphene and Application of the Method in Improving Graphene Mass Specific Capacitance
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  • Graphene Nitrogen Atom Replacement Doping Method and Prepared Graphene and Application of the Method in Improving Graphene Mass Specific Capacitance

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Effect test

Embodiment 1

[0060] A nitrogen atom substitution doped graphene with a nitrogen content of 8% and a specific surface area of ​​2970.8m 2 / g.

[0061] Its preparation method is to carry out the reduction reaction of doping with nitrogen while activating graphene, and the specific operation is as follows:

[0062] 1. Take the graphite oxide prepared by the Hummers method, and obtain graphene oxide powder after microwave peeling;

[0063] 2. Then weigh 500mg graphene oxide powder and dissolve it in 25ml 0.1g / mL KOH solution, fully stir and dry;

[0064] 3. Put the graphene oxide-KOH mixture in a vacuum tube furnace. After removing the air in the furnace, 3 Argon gas with a purity of 99.99% is fed into the vacuum tube furnace at a flow rate of / min. In an inert atmosphere, the temperature is first raised to 800°C, and the temperature is kept constant. 3 Ammonia gas was introduced at a flow rate of 800°C for 10 minutes;

[0065] 4. After the reaction is completed, the temperature is natural...

Embodiment 2

[0069] A nitrogen atom substitution doped graphene with a nitrogen content of 6% and a specific surface area of ​​2110.6m 2 / g.

[0070] Its preparation method is to carry out the same nitrogen doping reduction reaction while activating graphene, and the specific operation is as follows:

[0071] 1. Take the graphite oxide prepared by the Hummers method, and obtain graphene oxide powder after microwave peeling;

[0072] 2. Then weigh 300mg graphene oxide powder and dissolve it in 20ml 0.6g / mL KOH solution, fully stir and dry;

[0073] 3. Put the graphene oxide-KOH mixture in a vacuum tube furnace. After removing the air in the furnace, 3 The flow rate per minute is to feed argon with a purity of 99.99% into the vacuum tube furnace, first raise the temperature to 1000°C, keep the temperature constant, and then increase 3 Ammonia gas is fed at a flow rate of 1000°C for 5 minutes;

[0074] 4. After the reaction is completed, the temperature is naturally cooled to room tempera...

Embodiment 3

[0078] A nitrogen atom substitution doped graphene with a nitrogen content of 9% and a specific surface area of ​​2300.3m 2 / g.

[0079] Its preparation method is to carry out the same nitrogen doping reduction reaction while activating graphene, and the specific operation is as follows:

[0080] 1. Take the graphite oxide prepared by the Hummers method, and obtain graphene oxide powder after microwave peeling;

[0081] 2. Then weigh 350mg graphene oxide powder and dissolve it in 20ml 1.4g / mL KOH solution, fully stir and dry;

[0082] 3. Put the graphene oxide-KOH mixture in a vacuum tube furnace, with a distance of 180cm 3 The nitrogen gas with a purity of 99.999% is introduced into the vacuum tube furnace at a flow rate of / min, and the temperature is first raised to 900°C, and then the 3 Ammonia gas was introduced at a flow rate of / min, and calcined at a high temperature of 900°C for 10 minutes;

[0083] 4. After the reaction is completed, the temperature is naturally ...

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Abstract

The invention discloses a method for improving graphene material mass specific capacitance. On the condition that the high specific surface area and the single layer structure of graphene are kept, the electron energy band structure of the graphene is changed by the fact that nitrogen atom displacement mixing happens inside a graphene body, density of electronic states and carrier concentration are increased. The method includes that the graphene is subjected to activating treatment, and meanwhile a high-temperature reduction reaction is carried out, nitrogen atom displacement mixing of the graphene is completed in a one-shot mode. According to the method, the graphene mixed with nitrogen is high in nitrogen content, large in specific surface area, high in specific capacitance, simple in process, stable in nitrogen content, environment-friendly and high in production rate.

Description

technical field [0001] The invention relates to a graphene nitrogen doping method and application thereof. Background technique [0002] Graphene, English name Graphene, is a two-dimensional lattice structure in which carbon atoms are arranged in a hexagonal manner. Since it was discovered by scientists at the University of Manchester in 2004, it has become the focus of attention of the scientific and industrial circles. Due to the special atomic structure of graphene, the behavior of carriers (electrons and holes) must be described by relativistic quantum mechanics. At the same time, as a single-layer carbon atom structure, the theoretical specific surface area of ​​graphene is as high as 2630m 2 / g. Such a high specific surface area and its special atomic structure characteristics make graphene the most ideal electrode material for supercapacitors. [0003] At present, nitrogen-doped graphene is used to improve the reduction degree of graphene and increase the conducti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G11/34H01B1/04H01B13/00
Inventor 李璐瞿研
Owner THE SIXTH ELEMENT CHANGZHOU MATERIALS TECH
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