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Preparation process method of BC4 conversion film for 4H-SiC-based neutron detector

A neutron detector and semiconductor technology, applied in metal material coating process, ion implantation plating, coating, etc., can solve problems such as difficult to realize operation and easy control, difficult to control film thickness, complex deposition process, etc.

Inactive Publication Date: 2014-11-26
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the film thickness of thermal evaporation technology is not easy to control, while the deposition process of PEVCD technology is complicated, and the reactants and reaction residues need to be continuously replenished during deposition, so it is difficult to achieve easy-to-operate, convenient and effective access to high-efficiency semiconductor neutron detectors. Dense and precise thickness controllable conversion coating preparation

Method used

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  • Preparation process method of BC4 conversion film for 4H-SiC-based neutron detector
  • Preparation process method of BC4 conversion film for 4H-SiC-based neutron detector
  • Preparation process method of BC4 conversion film for 4H-SiC-based neutron detector

Examples

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Embodiment 1

[0028] The 4H-SiC base neutron detector of the present embodiment uses B 4 C conversion thin film preparation process is as follows:

[0029] a. Put the substrate material 4H-SiC matrix into acetone and absolute ethanol in sequence for 20 minutes of ultrasonic cleaning, take out and dry after fully cleaning;

[0030] b. Use the single crystal 4H-SiC substrate after cleaning in step a as the magnetron target 10 B with a B concentration of 96% 4 The C target is placed in the vacuum chamber of the reactive magnetron sputtering coating vacuum furnace, and then vacuumed to 5.0×10 -4 Pa, impurities in the single crystal 4H-SiC substrate were removed by bias reverse sputtering cleaning, the power of reverse sputtering cleaning was 120 W, and the bias voltage was -500 V; pre-sputtering cleaning was used to remove B 4 C target impurity, pre-sputter cleaning power is 120 W, bias voltage is -100 V; reverse sputter cleaning and pre-sputter cleaning starter gas is argon, the flow rate...

Embodiment 2

[0035] The 4H-SiC base neutron detector of the present embodiment uses B 4 The C conversion film preparation process is basically the same as that of Example 1, except that the reaction magnetron sputtering coating vacuum furnace is evacuated to 4.0×10 -4 Pa, the power of reverse sputter cleaning is 100 W, the bias voltage is -400 V; the power of pre-sputter cleaning is 100 W, the bias voltage is -100 V, the flow rate of argon gas is 160 sccm, the reverse sputter cleaning and pre-sputter cleaning The vacuum degree of sputter cleaning operation is 1.5 Pa absolute pressure. The power of sputtering deposition is 100 W, the flow rate of argon gas is 150 sccm, and the vacuum degree of sputtering deposition operation is an absolute pressure of 0.43 Pa; B 4 The C coating sputtering deposition operation process is a continuous operation process. sputter deposition B 4 The thickness of the C coating is 1.2 μm, and the vacuum degree in the reactive magnetron sputtering coating vacuu...

Embodiment 3

[0037] In deposition B 4 In the C conversion film process, the deposition power has a great influence on the thickness, uniformity and structure of the conversion film. This embodiment B 4 Coating equipment and other processing conditions used in the preparation of C conversion film are all the same as in Example 1, and keep B 4 The thickness of C conversion film is controllable at 1.2 μm, and the deposition of B 4 When C changes the deposition power, if it is selected as 50 W, 80 W and 120 W, it can be used for B 4 The control of the deposition rate of the C conversion film can also meet the requirements of precise and controllable thickness, and the prepared conversion film layer can also be passed 10 B(n, α) 3 α produced by the H reaction, 7 Li particle energy spectroscopy tests the incident neutron signal.

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Abstract

The invention discloses a preparation method of a BC4 conversion film for a 4H-SiC-based semiconductor neutron detector. The preparation method mainly comprises the following steps of: respectively immersing a 4H-SiC base body into acetone and alcohol and carrying out ultrasonic washing; removing impurities contained in the 4H-SiC base body by adopting biasing back-sputtering cleaning, and removing the impurities on the surface of a BC4 target material through previous-sputtering cleaning; depositing a BC4 coating on the 4H-SiC base body by taking the BC4 target as a magnetic-control target; regulating the vacuum degree inside a reaction magnetic-control sputtering coating vacuum furnace to be not less than 10<-3> Pa, naturally cooling, and then discharging to obtain the BC4 conversion film deposited on the 4H-SiC base body, wherein argon gas is used as the striking gas during the sputtering cleaning and the sputtering deposition. The BC4 conversion film obtained through the preparation method disclosed by the invention has the advantages of accurate and controllable thickness, radiation damage resistance, high-temperature resistance, excellent combination property with the 4H-SiC base body, high repetitiveness of a preparation process and easiness for industrial popularization; and the neutron detector synthesized from the prepared BC4 conversion film layer and a semiconductor 4H-SiC device has the advantages of actual measurement effects of low noise, high neutron detection efficiency, high gamma inhibition, and the like.

Description

technical field [0001] The invention belongs to the application field of neutron detection technology, and relates to a novel small-volume and high-efficiency 4H-SiC-based neutron detector B used for measuring incident neutron intensity. 4 C conversion thin film preparation process. Background technique [0002] At present, the sandwich neutron spectrum detector based on Si devices is one of the common nuclear reaction methods for measuring the neutron spectrum of critical devices, see literature [Li Runliang, Wang Chongsen, Zhou Shourong et al. 6 Measurement of neutron energy spectrum of critical device by Li semiconductor spectrometer[J]. Nuclear Physics and Nuclear Engineering, 1983,3(2):128-130], [Ding Honglin, Tang Zumei, Zhang Xiufeng. 6 LiF sandwich semiconductor neutron detector[J]. Nuclear Electronics and Nuclear Detection Technology, 1982,2(4)39-40] and literature [Jiang Yong, Li Junjie, Zheng Chun. 6 Performance determination of gold silicon surface barrier det...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/06C23C14/02
Inventor 刘波蒋勇张彦坡
Owner SICHUAN UNIV
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