Indium tin oxide nanowire array composite, method for preparing indium tin oxide nanowire array composite and application of indium tin oxide nanowire array composite in solar cell

An indium tin oxide nanometer and composite material technology, which is applied to circuits, capacitors, electrical components and other directions, can solve the problems of increasing battery series resistance and affecting battery stability, and achieves the effects of good stability, low cost and simple method.

Active Publication Date: 2014-03-05
INST OF CHEM CHINESE ACAD OF SCI
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Problems solved by technology

The former will slowly react with the polysulfide electrolyte due to the presence of the metal substrate, thereby affecting the stability of the battery; the latter not only needs to prepare catalyst materials and conductive additives separately, but the properties of the conductive material itself and the uniformity of the composite will directly restrict the stability of

Method used

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  • Indium tin oxide nanowire array composite, method for preparing indium tin oxide nanowire array composite and application of indium tin oxide nanowire array composite in solar cell
  • Indium tin oxide nanowire array composite, method for preparing indium tin oxide nanowire array composite and application of indium tin oxide nanowire array composite in solar cell
  • Indium tin oxide nanowire array composite, method for preparing indium tin oxide nanowire array composite and application of indium tin oxide nanowire array composite in solar cell

Examples

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Example Embodiment

[0043] Example 1. Wrapping Cu 2 S nanoparticle indium tin oxide nanowire array composite material (Cu 2 SITO) and its applications

[0044] The metal indium powder and tin powder are heated to 800℃ in a tube furnace according to a molar ratio of 10:1, and then the source zone temperature is reacted at 800℃ for 20 minutes and then cooled to room temperature naturally, and placed in the deposition zone of the tube furnace in advance A certain length of ITO nanowire array will grow on the FTO conductive glass sputtered with Au particles (average particle size of 5 nanometers) at the location (the temperature is about 400°C).

[0045] Choose an ITO nanowire array with an average length of 10 microns (where the diameter of the nanowire is about 120 nanometers) as the substrate for the load, and place the ITO nanowire array in a pre-prepared 200mL aqueous solution (containing 20mM cadmium chloride, 66 mM ammonium chloride and 140 mM thiourea, pH adjusted to 9.5), react at 25°C for 2 hour...

Example Embodiment

[0053] Example 2: Cu wrapped 2 S nanoparticle indium tin oxide nanowire array composite material (Cu 2 SITO) and its applications

[0054] The specific preparation method is basically the same as that in Example 1, except that: an ITO nanowire array with an average length of 3 microns (wherein, the diameter of the nanowire is about 100 nanometers) is selected as the substrate for the load, and the Cu is finally prepared. 2 SITO.

[0055] Cu prepared by this example 2 SITO was used as the counter electrode, and the quantum dot-sensitized solar cell device was assembled according to the same method as in Example 1, and its photoelectric conversion performance was tested. The photoelectric conversion efficiency was 3.37%.

Example Embodiment

[0056] Example 3: Cu wrapped 2 S nanoparticle indium tin oxide nanowire array composite material (Cu 2 SITO) and its applications

[0057] The specific preparation method is basically the same as that in Example 1, except that: an ITO nanowire array with an average length of 7 microns (wherein the diameter of the nanowire is about 110 nanometers) is selected as the substrate for the load, and the Cu is finally prepared. 2 SITO.

[0058] Cu prepared by this example 2 SITO was used as the counter electrode, and the quantum dot-sensitized solar cell device was assembled according to the same method as in Example 1, and its photoelectric conversion performance was tested. The photoelectric conversion efficiency was 3.54%.

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Abstract

The invention discloses an indium tin oxide nanowire array composite, a method for preparing the indium tin oxide nanowire array composite and the application of the indium tin oxide nanowire array composite in a solar cell. The indium tin oxide nanowire array composite comprises an indium tin oxide nanowire array which is generated on a conducting substrate, and cuprous sulfide nano-particles are wrapped on the indium tin oxide nanowire array. The method for preparing the indium tin oxide nanowire array composite comprises the steps that (1) the indium tin oxide nanowire array is generated on the conducting substrate through deposition by means of the chemical vapor deposition method with gold nanoparticles as a catalyst; (2) CdS nano-particles are wrapped on the indium tin oxide nanowire array by means of the chemical bath deposition method; (3) the CdS nano-particles are converted into the Cu2S nano-particles by means of the ion exchange method, and then the composite is obtained through calcinations in the inert atmosphere. The performance of the constituted solar cell with a counter electrode material made of the Cu2S@ITO nanowire array prepared with the method is far better than that of a solar cell with a counter electrode material made of precious metal Pt or Au and a transition metal chalcogen compound of a metal matrix.

Description

technical field [0001] The invention relates to an indium tin oxide nanowire array composite material, a preparation method thereof and an application in solar cells. Background technique [0002] With the rapid development of contemporary human society, the increasingly serious energy and environmental problems have accelerated the development and utilization of new energy technologies. Solar energy has attracted widespread attention due to its abundant resource reserves, clean and environmental protection, and as photoelectric conversion devices. Solar cells have become the focus of research. Quantum dot-sensitized solar cells, as a new type of photoelectric conversion device, draw on the structure of dye-sensitized solar cells and replace organic dye molecules with inorganic semiconductor quantum dots as light-absorbing materials, which can not only significantly reduce production costs, but also rely on inorganic The quantum size effect and multi-electron excitation eff...

Claims

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Application Information

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IPC IPC(8): H01G9/042
Inventor 胡劲松姜岩宋卫国
Owner INST OF CHEM CHINESE ACAD OF SCI
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