Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

NKBT water-based sol, binary ferroelectric and piezoelectric film prepared from the same and manufacturing method

A sol-based and water-based technology, applied in chemical instruments and methods, inorganic chemistry, titanium compounds, etc., can solve the problems of human health hazards, expensive metal alkoxides, high toxicity, etc., achieve short processing time, perovskite phase The formation of stable, less pollution effect

Inactive Publication Date: 2014-07-09
GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS BEIJNG
View PDF1 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, organic solvents such as ethylene glycol monomethyl ether are more toxic and have great harm to human health.
On the other hand, metal alkoxides are also more expensive

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • NKBT water-based sol, binary ferroelectric and piezoelectric film prepared from the same and manufacturing method
  • NKBT water-based sol, binary ferroelectric and piezoelectric film prepared from the same and manufacturing method
  • NKBT water-based sol, binary ferroelectric and piezoelectric film prepared from the same and manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0043] (1) Preparation of a new type of water-based NKBT sol

[0044] The starting material is preferably analytically pure sodium acetate (NaCOOCH 3 ), potassium acetate (KCOOCH 3 ), tetrabutyl titanate (Ti(OC 4 h 9 ) 4 ), bismuth nitrate (Bi(NO 3 ) 3 ·5H 2 O). with water and glacial acetic acid (CH 3 COOH) as a solvent, while adding a small amount of isopropanol ((CH 3 ) 2 CHOH), acetylacetone (CH 3 COCHCOCH 3 ) as a stabilizer, formamide (CHONH 2 ) as a chelating agent and desiccant. At the same time, due to the volatilization of part of Bi and Na / K in the subsequent heat treatment process, a certain amount of excess bismuth nitrate and sodium acetate / potassium acetate will be added to the configuration of NKBT sol. The solvent component of the configuration is selected at the quasi-isotype phase boundary, with the best performance of 0.85 (Na 0.5 Bi 0.5 )TiO 3 -0.15(K 0.5 Bi 0.5 )TiO 3 , prepare the sol by mixing the raw materials according to this chem...

Embodiment 1

[0060] The preparation of embodiment 1 water-based NKBT sol

[0061] Step (1): Add isopropanol and acetylacetone to glacial acetic acid at a concentration of 0.72 mol / L and 0.72 mol / L respectively, and then dissolve tetrabutyl titanate at a concentration of 0.24 mol / L in the glacial acetic acid solution.

[0062] Step (2): Add bismuth nitrate to the mixture obtained in step (1), the concentration of bismuth nitrate is 0.132mol / L in terms of glacial acetic acid, and stir the solution on a homogenizer until it becomes transparent.

[0063] Step (3): in the mixture that step B obtains, add the deionized water of equal volume with glacial acetic acid as solvent, then add sodium acetate and potassium acetate, the concentration of sodium acetate and potassium acetate is as shown in table 1 in terms of glacial acetic acid, The mixture was then stirred until clear.

[0064] Table 1

[0065]

[0066] Step (4): in the solution that step C obtains, add formamide as chelating ...

Embodiment 2 2

[0067] Example 2 Preparation of Binary Ferroelectric Thin Film (1)

[0068] (1)Pt / Ti / SiO 2 / Si substrate

[0069] This embodiment adopts Pt / Ti / SiO 2 / Si substrate, the preparation process is as follows: first, p-Si silicon wafer is cleaned according to the standard CMOS process, and after drying, it is oxidized in an oxidation furnace at 1100°C for 2 hours to form SiO with a thickness of about 300nm 2 , and then use the magnetron sputtering method to sputter the bonding layer Ti and the bottom electrode layer Pt, and the resulting thicknesses of Ti and Pt are 30nm and 200nm, respectively. The sputtering process parameters of Ti bonding layer Ti and bottom electrode layer Pt are shown in Table 2.

[0070] Table 2 Typical preparation process parameters of Ti layer and bottom electrode Pt

[0071] sputtered film

sputtering atmosphere

Sputtering pressure

Substrate temperature

Sputtering power

membrane thickness

Adhesive Ti

Ar

1.5Pa ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
dielectric lossaaaaaaaaaa
Login to View More

Abstract

The invention relates to a novel NKBT ((Na0.85K0.15)0.5Bi0.5TiO3) water-based sol, a binary ferroelectric and piezoelectric film prepared from the same and a manufacturing method. The method includes: taking glacial acetic acid and deionized water as solvents, adopting acetate and nitrate as raw materials, using isopropanol and acetylacetone as stabilizers, and employing formamide as a chelating agent and a drying agent to prepare the (Na0.85K0.15)0.5Bi0.5TiO3 sol; then utilizing a rapid thermal treatment furnace, and carrying out layer-by-layer drying, pyrolysis and annealing, thus obtaining the (Na0.85K0.15)0.5Bi0.5TiO3 film. The film prepared by the invention is a randomly oriented polycrystalline film, which has a smooth and compact surface. Compared with the films prepared by conventional sol-gel methods, the film has lower leakage current and better ferroelectric and piezoelectric properties.

Description

technical field [0001] The invention relates to the field of ferroelectric piezoelectric thin film materials, in particular to (Na 0.85 K 0.15 ) 0.5 Bi 0.5 TiO 3 Binary ferroelectric thin film and its preparation method. Background technique [0002] Ferroelectric thin films are an important class of functional thin film materials, and have been the frontier and hotspot of ferroelectric research and high-tech new materials research for many years. In addition to excellent ferroelectric performance, some special fields such as aerospace, automobile and energy exploration also have high requirements for high temperature performance of devices. Perovskite structure (Na 0.85 K 0.15 ) 0.5 Bi 0.5 TiO 3 (NKBT) binary system is considered to be a promising and promising non-lead ferroelectric material because it is near the quasi-isomorphic phase boundary, and has good piezoelectric properties and high Curie temperature. Research focus [1.A.Sasaki, T.Chiba, Y.Mamiya, E.Ot...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01G23/00B32B33/00
Inventor 吴云翼李龙土李弢王磊华志强
Owner GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS BEIJNG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com