Method for preparing cuprous oxide nanometer wire by utilizing plant phenolic acid

A plant phenolic acid, cuprous oxide technology, applied in copper oxide/copper hydroxide, nanotechnology for materials and surface science, nanotechnology, etc., can solve the problem of impure composition of cuprous oxide nanowires and high raw material cost , high toxicity, etc., to achieve the effect of being suitable for large-scale production, simple process, and pure product
CN104477968AActive Publication Date: 2015-04-01NORTHEASTERN UNIV LIAONING
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
NORTHEASTERN UNIV LIAONING
Publication Date
2015-04-01

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Abstract

Aiming at the shortcomings of an existing technology for preparing a cuprous oxide nanometer wire, the invention discloses a method for preparing the cuprous oxide nanometer wire by utilizing plant phenolic acid and belongs to the field of a nanometer material and a novel material. The method comprises the following steps: heating a plant phenolic acid solution to the temperature of 50 to 95 DEG C under an alkaline condition by taking natural plant phenolic acids including protocatechuic acid, gallic acid and ellagic acid as a reducing agent; dropwise adding inorganic salt solutions of copper sulfate, copper chloride, cupric nitrate and copper acetate into the plant phenolic acid solution, reacting for 0.5-5 hours and directly precipitating to obtain a cuprous oxide nanometer wire material. The method is environmental friendly, simple in technological process, capable of directly finishing the technological process by one step in an alkaline solution, free of toxin or low in toxicity in raw materials, low in cost, pure in product and suitable for large-scale production.
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Description

technical field

[0001] The invention belongs to the field of nanometer materials and new materials, in particular to a method for preparing cuprous oxide nanowires by using plant phenolic acids. Background technique

[0002] One-dimensional nanostructured materials have attracted more and more attention in various fields due to their specific optical, electrical, magnetic and mechanical properties. In terms of semiconductor materials and device manufacturing, the application and development of one-dimensional nanowires and micro-nano-scale devices has gradually become a development trend. Therefore, the industrial preparation of low-dimensional semiconductor compound nanowires is increasingly important.

[0003] Cuprous oxide (Cu 2 O) is an intrinsic p-type semiconductor material with a band gap of 2.1eV. This band gap determines that cuprous oxide is very suitable for various devices such as photoelectric and photochemical energy conversion of solar energy, such as solar ...

Claims

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