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Method for preparing cuprous oxide nanometer wire by utilizing plant phenolic acid

A plant phenolic acid, cuprous oxide technology, applied in copper oxide/copper hydroxide, nanotechnology for materials and surface science, nanotechnology, etc., can solve the problem of impure composition of cuprous oxide nanowires and high raw material cost , high toxicity, etc., to achieve the effect of being suitable for large-scale production, simple process, and pure product

Active Publication Date: 2015-04-01
NORTHEASTERN UNIV LIAONING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are still many challenges in the mass production of high-quality cuprous oxide nanowires. The existing technologies for preparing cuprous oxide nanowires generally suffer from high raw material costs, high toxicity, long synthesis and preparation process time, high temperature, and Copper nanowire composition phase impurity and other limitations

Method used

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  • Method for preparing cuprous oxide nanometer wire by utilizing plant phenolic acid
  • Method for preparing cuprous oxide nanometer wire by utilizing plant phenolic acid
  • Method for preparing cuprous oxide nanometer wire by utilizing plant phenolic acid

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Weigh 4.62g protocatechuic acid (molecular weight=154.12), add 1000mL deionized water, after dissolving, utilize the NaOH aqueous solution of concentration 2mol / L to adjust the pH=11 of solution, the solution is heated to 75 ℃ and keep this temperature at 100 Stir at a speed of ~200rpm for 60 minutes; then add 600mL of 0.05mol / L copper sulfate aqueous solution to the aqueous solution of protocatechuic acid at a rate of 10mL / min, and keep the pH = 11; ℃ temperature, 100-200rpm stirring speed for 60 minutes, and then centrifuge at 4000-5000rpm to separate the solid sediment; after the sediment was washed with deionized water and ethanol, it was vacuum-dried at 60℃ for 24 hours to obtain cuprous oxide single crystal nanowires.

[0033] The cuprous oxide single crystal nanowire has a diameter of about 55-67 nanometers and a length of about 5.5-6.2 microns.

[0034] figure 1 and figure 2 It is the XRD pattern and the SEM pattern of the cuprous oxide nanowire prepared by ...

Embodiment 2

[0036] Weigh 2.55g of gallic acid (molecular weight = 170.12), add 800mL of deionized water, after dissolving, use 2mol / L KOH aqueous solution to adjust the pH of the solution to 10, heat the solution to 85°C and maintain the temperature at a speed of 100-200rpm Stir for 2 hours; then add 400 mL of copper chloride solution with a concentration of 0.5 mol / L into the gallic acid aqueous solution at a rate of 5 mL / min, and keep the pH=10; React at a stirring speed of 100-200rpm for 2 hours, and then centrifuge at a speed of 7000-8000rpm to separate the solid sediment; after the sediment is washed with deionized water and ethanol, it is vacuum-dried at 80°C for 36 hours to obtain a cuprous oxide single crystal nanowire .

[0037] The cuprous oxide single crystal nanowire has a diameter of about 93-97 nanometers and a length of about 12.9-14.6 microns.

[0038] image 3 and Figure 4 It is the TEM image and the electron diffraction image of the cuprous oxide nanowire prepared by...

Embodiment 3

[0040]Weigh 8.51g of gallic acid, add 1000mL of deionized water, after dissolving, use 3mol / L KOH aqueous solution to adjust the pH of the solution to 7, heat the solution to 60°C and keep stirring at a speed of 100-200rpm for 30 minutes; then mix 0.2 Add 1000mL of mol / L copper nitrate solution into the gallic acid aqueous solution at a rate of 8mL / min, and keep the pH = 7; after mixing, the solution continues to react at a temperature of 60°C and a stirring speed of 100-200rpm for 30 minutes , filtered, and the precipitate was washed with deionized water and ethanol, and vacuum-dried at 70° C. for 24 hours to obtain cuprous oxide single crystal nanowires.

[0041] The cuprous oxide single crystal nanowire has a diameter of about 72-77 nanometers and a length of about 11.7-13 microns.

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Abstract

Aiming at the shortcomings of an existing technology for preparing a cuprous oxide nanometer wire, the invention discloses a method for preparing the cuprous oxide nanometer wire by utilizing plant phenolic acid and belongs to the field of a nanometer material and a novel material. The method comprises the following steps: heating a plant phenolic acid solution to the temperature of 50 to 95 DEG C under an alkaline condition by taking natural plant phenolic acids including protocatechuic acid, gallic acid and ellagic acid as a reducing agent; dropwise adding inorganic salt solutions of copper sulfate, copper chloride, cupric nitrate and copper acetate into the plant phenolic acid solution, reacting for 0.5-5 hours and directly precipitating to obtain a cuprous oxide nanometer wire material. The method is environmental friendly, simple in technological process, capable of directly finishing the technological process by one step in an alkaline solution, free of toxin or low in toxicity in raw materials, low in cost, pure in product and suitable for large-scale production.

Description

technical field [0001] The invention belongs to the field of nanometer materials and new materials, in particular to a method for preparing cuprous oxide nanowires by using plant phenolic acids. Background technique [0002] One-dimensional nanostructured materials have attracted more and more attention in various fields due to their specific optical, electrical, magnetic and mechanical properties. In terms of semiconductor materials and device manufacturing, the application and development of one-dimensional nanowires and micro-nano-scale devices has gradually become a development trend. Therefore, the industrial preparation of low-dimensional semiconductor compound nanowires is increasingly important. [0003] Cuprous oxide (Cu 2 O) is an intrinsic p-type semiconductor material with a band gap of 2.1eV. This band gap determines that cuprous oxide is very suitable for various devices such as photoelectric and photochemical energy conversion of solar energy, such as solar ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G3/02B82Y30/00
CPCB82Y30/00C01G3/02C01P2004/16C01P2004/64
Inventor 霍地孙旭东万千
Owner NORTHEASTERN UNIV LIAONING
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