Organic electroluminescence device and preparation method thereof
An electroluminescent device and a luminescent technology, which are applied in organic light-emitting devices, organic light-emitting device structures, organic semiconductor devices, etc., can solve problems such as poor film-forming properties of lithium fluoride, easy formation of electronic defects, and electronic quenching
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[0036] The preparation method of the organic electroluminescence device 100 of an embodiment, it comprises the following steps:
[0037] Step S110 , sequentially forming a hole injection layer 20 , a hole transport layer 30 , a light emitting layer 40 , an electron transport layer 50 and an electron injection layer 60 on the surface of the anode 10 .
[0038] The anode 10 is indium tin oxide glass (ITO), fluorine-doped tin oxide glass (FTO), aluminum-doped zinc oxide glass (AZO) or indium-doped zinc oxide glass (IZO), preferably ITO, and the thickness of the anode 10 is 50 nm to 300 nm, preferably 120 nm.
[0039] In this embodiment, before the hole injection layer 20 is formed on the surface of the anode 10, the anode 10 is pretreated. The pretreatment includes: performing photolithography on the anode 10, cutting it into the required size, using detergent, deionized Water, acetone, ethanol, and isopropanone were each ultrasonically cleaned for 15 minutes to remove organic p...
Embodiment 1
[0056] The structure ITO / MoO prepared in this embodiment 3 / NPB / Alq 3 / Bphen / Rb 2 CO 3 :ZnO:PBD / CsF:Bphen / Ag organic electroluminescent device, in this embodiment and the following embodiments, " / " indicates a layer, and ":" indicates doping.
[0057] Magnetron sputtering anode on the glass substrate, the material is ITO, and then photolithography treatment, cut into the required size, followed by detergent, deionized water, acetone, ethanol, isopropanol ultrasonic 15min each, to remove the glass surface organic pollutants; after cleaning, carry out proper treatment on the conductive substrate: oxygen plasma treatment, the treatment time is 5min, the power is 30W; the thickness is 80nm, and the hole injection layer is evaporated, and the material is MoO 3 , with a thickness of 25nm; the vapor-deposited hole transport layer, the material is NPB, and the thickness is 55nm; the vapor-deposited light-emitting layer, the material is Alq 3 , with a thickness of 16nm; the vapor-d...
Embodiment 2
[0065] The structure prepared in this example is AZO / WO 3 / NPB / DCJTB / TAZ / RbCl:ZnO:Bphen / Cs 2 CO 3 : PBD / Al organic electroluminescence device.
[0066] Magnetron sputtering anode on the glass substrate, the material is AZO, and then photolithography treatment, cut into the required size, sequentially use detergent, deionized water, ultrasonic 15min, remove the organic pollutants on the glass surface; Hole injection layer: material is WO 3 , with a thickness of 40nm; evaporated hole transport layer: the material is NPB, with a thickness of 45nm; evaporated luminescent layer: the selected material is DCJTB, with a thickness of 8nm; evaporated electron transport layer, the material is TAZ, with a thickness of 65nm; The injection layer includes a ternary doped layer and a cesium salt doped layer. The ternary doped layer is deposited by electron beam evaporation. The material is RbCl:ZnO:Bphen, and the mass ratio of RbCl, ZnO to Bphen is 3:2:1, and the thickness It is 10nm; On ...
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