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On-chip inductor based on graphene/metal composite wire and preparation method

A metal composite, on-chip inductor technology, used in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve difficult problems, achieve the effect of improving quality factor, strong practicability, and simple process

Inactive Publication Date: 2015-12-02
WUHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in practical applications, the single-layer graphene with the lowest resistivity has a thickness of only 0.334nm, and its square resistance is usually more than tens of ohms. μm) is several orders of magnitude higher, therefore, it is difficult to directly apply to existing on-chip inductors

Method used

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  • On-chip inductor based on graphene/metal composite wire and preparation method
  • On-chip inductor based on graphene/metal composite wire and preparation method
  • On-chip inductor based on graphene/metal composite wire and preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0044] 1) Prepare a piece of PET film, wash and dry it; use chemical vapor deposition to grow a nine-layer graphene film doped with nitrogen impurities on the nickel foil; use the graphene transfer process to transfer the nine-layer graphene film on the nickel foil to PET film, such as figure 2 as shown in (a);

[0045]Electron beam evaporation is used to deposit a layer of 2um aluminum film on the PET film with graphene transferred, and the aluminum film is etched into an aluminum inductor coil by photolithography and wet etching processes, such as figure 2 as shown in (b);

[0046] 2) A nine-layer graphene film doped with nitrogen impurities is grown on a nickel foil by chemical vapor deposition; a graphene transfer process is used to transfer the nine-layer graphene on the nickel foil to a PET film prepared with an aluminum inductor coil, such as figure 2 as shown in (c);

[0047] 3) The graphene film transferred to the PET film is etched by photolithography process a...

Embodiment 2

[0049] 1) Prepare a quartz plate, clean it, and dry it; use chemical vapor deposition to grow three-layer graphene doped with boron impurities on nickel foil; use graphene transfer process to transfer the three-layer graphene on copper foil to the quartz plate ,Such as figure 2 as shown in (a);

[0050] A layer of 2um aluminum film is deposited on the quartz sheet with graphene transferred by electron beam evaporation process, and the aluminum film is etched into aluminum inductance coil by photolithography process and wet etching process, such as figure 2 as shown in (b);

[0051] 2) Three-layer graphene doped with boron impurities is grown on nickel foil by chemical vapor deposition; three-layer graphene on nickel foil is transferred to a quartz sheet prepared with an aluminum inductance coil by a graphene transfer process, such as figure 2 as shown in (c);

[0052] 3) The graphene film transferred to the quartz sheet is etched by photolithography process and oxygen pl...

Embodiment 3

[0054] 1) Prepare a piece of quartz, clean and dry;

[0055] A layer of 2um copper film is deposited on the quartz wafer by magnetron sputtering; the copper film is patterned by photolithography and wet etching to form a copper inductance coil, such as image 3 as shown in (a);

[0056] 2) Put the quartz plate with the copper inductance coil into the chemical vapor deposition system, introduce hydrogen gas at a flow rate of 15 sccm, raise the temperature to 1024°C within 60 minutes, and keep it for 15 minutes; then fill it with methane gas at a flow rate of 30 sccm, and keep the temperature constant After 15 minutes, slowly cool down to 700°C at a rate of 1°C / min, turn off the methane gas, and the graphene growth stage is completed. At this point, the single-layer graphene grows on the surface of the copper wire to form a Figure 4 The structure of the semi-wrapped composite wire is shown; the temperature is rapidly cooled to room temperature, and the flow of hydrogen gas is ...

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Abstract

The invention discloses an on-chip inductor based on a graphene / metal composite wire and a preparation method, and belongs to the technical field of microelectronic devices. The on-chip inductor includes a substrate, an inductance coil formed by a graphene / metal composite wire is arranged on the substrate, and the graphene / metal composite wire includes a metal wire and a graphene film that wraps an outer surface of the metal wire. The preparation method includes the steps of: (1) depositing a metal film on a substrate, an insulating substrate on which graphene is transferred or a semiconductor substrate where silicon dioxide grows, and etching the metal film into a metal inductance coil; and (2) covering the metal inductance coil with a graphene film, thereby obtaining the on-chip inductor based on the graphene / metal composite wire. The on-chip inductor based on the graphene / metal composite wire and the preparation method have the advantages that the quality factor, thermal conductivity, oxidation resistance, current-carrying capability and high-frequency working performance of the on-chip inductor are improved, single-layer graphene wraps the surface of the metal wire, and has little influence on the size of the on-chip inductor, the implementation process is simple, and very strong practicability is achieved.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices, in particular to an on-chip inductor based on a graphene / metal composite wire and a preparation method thereof. Background technique [0002] On-chip inductors are the basic passive components of radio frequency integrated circuits, which can realize the conversion and storage of electrical energy to magnetic energy. They are widely used in various RF front-end modules such as low noise amplifiers, voltage-controlled oscillators, mixers, and filters. The basis of wireless communication circuits. Driven by applications such as higher frequency and lower power consumption, radio frequency circuits require higher performance circuit components. However, compared with rapidly developing active devices, the high-frequency performance of on-chip inductors improves slowly, and the inductor quality factor is usually lower than 10, which leads to problems such as poor circuit frequency ...

Claims

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Application Information

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IPC IPC(8): H01L23/522H01L21/02
Inventor 刘锋王国平刘胜丁文
Owner WUHAN UNIV
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