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Method for preparing organic semiconductor single crystal micro-nano wire array by brush

A technology of organic semiconductors and micro-nano wires, applied in the field of organic electronics, can solve the problems of uncontrollable direction and position of micro-nano wires, difficulty in growing micro-nano wire arrays, low success rate of micro-nano wire arrays, etc. Area preparation, process and equipment are simple, and the effect of gravity is small

Active Publication Date: 2018-02-13
NORTHEAST NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this method is simple and feasible, the success rate of micro-nano wire arrays reported by dripping method is low; the coverage area is small; the direction and position of micro-nano wires are uncontrollable (Langmuir 2010, 26, 1130; Nanoscale 2014, 6,1323; Synthetic Metals 2014,198,248)
In addition, due to the small spreading area of ​​the solution, the gravitational effect of the solution on the substrate per unit area is relatively large, and it is not easy to grow micro-nano wire arrays on flexible or curved substrates of any shape, which limits its implantability. Applications in wearable and flexible electronics

Method used

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  • Method for preparing organic semiconductor single crystal micro-nano wire array by brush
  • Method for preparing organic semiconductor single crystal micro-nano wire array by brush
  • Method for preparing organic semiconductor single crystal micro-nano wire array by brush

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Embodiment 1, on the rigid substrate of plane (silicon chip, silicon / silicon dioxide chip, glass sheet etc.), utilize writing brush to control growth TCNQ micro-nano line array

[0044] (1) Clean silicon wafers, silicon / silicon dioxide wafers or glass substrates according to the following steps: Ultrasonic in acetone solution for 15 minutes, and dry on filter paper; then soak in chromic acid washing solution for 10 minutes, and then Rinse with deionized water and blow dry with general nitrogen.

[0045] Then, the above-mentioned substrate was subjected to plasma treatment in an oxygen atmosphere for 2 minutes, the power was 40W, the vacuum degree was 36 Pa, and the flow rate of oxygen was 8 sccm.

[0046] (2) The organic semiconductor TCNQ powder was dissolved in acetonitrile solvent, and a solution with a concentration of 0.8 g / L was prepared.

[0047] (3) Under atmospheric conditions, use a brush to dip the solution obtained in step (2), and then apply it to the plac...

Embodiment 2

[0050] Embodiment 2. On flexible or curved substrates (polyethylene terephthalate film (PET), three-dimensional glass hemispheres and contact lenses, etc.), use a brush to control the growth of TCNQ micro-nano line arrays

[0051] (1) Clean the three-dimensional glass hemispherical substrate according to the following steps: Ultrasound in acetone solution for 15 minutes, and dry on filter paper; then soak in chromic acid lotion for 10 minutes, rinse with deionized water, and then wash with ordinary Blow dry with nitrogen.

[0052] Follow the steps below to clean the polyethylene terephthalate film: first use acetone and ethanol to ultrasonically, then blow dry with general nitrogen;

[0053] Follow the steps below to clean contact lenses: clean the contact lens lotion, and then dry the upper surface with general nitrogen;

[0054] Then, the above-mentioned substrate was subjected to plasma treatment in an oxygen atmosphere for 2 minutes, the power was 40W, the vacuum degree w...

Embodiment 3

[0059] Embodiment 3, in SiO 2 On the / Si sheet substrate, the TCNQ micro-nano line array obtained in embodiment 1 is used as a semiconductor layer to prepare a field-effect transistor and its performance test

[0060] (1) cleaning SiO2 2 / Si substrate;

[0061] (2) Utilize technologies such as photolithography and evaporation to prepare patterned source-drain Au electrodes on the substrate obtained in step (1);

[0062] (3) On the substrate obtained in step (2), use the TCNQ micro-nano wire array obtained in Example 1 as the semiconductor layer of the transistor.

[0063] (4) For Si with a thickness of 450 μm as the gate, Au with a thickness of 30 nm as the source and drain electrodes, and SiO with a thickness of 300 nm 2 It is an insulating layer, and the TCNQ micro-nano wire array is a field-effect transistor prepared from a semiconductor. The transfer curve is tested under normal temperature and atmospheric conditions.

[0064] (5) Using the saturation zone formula Ca...

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Abstract

The invention discloses a method for preparing an organic semiconductor single crystal micro-nano line array by using a writing brush. The method comprises the following steps: 1) dissolving the organic semiconductor material in a solvent to obtain a solution of the organic semiconductor material; 2) after performing plasma treatment on the substrate, dipping the solution of the organic semiconductor material obtained in step 1) with a brush, and coating Cover the place to be coated on the substrate after plasma treatment, and then lift the brush to leave the place to be coated, and after the solvent volatilizes, the single crystal array is obtained. This method makes the solution spread larger, and then the solution becomes thinner, the concentration gradient becomes smaller, and the gravitational effect of the solution on the substrate per unit area is relatively small, which is more conducive to realizing large Area growth of micro-nanowire arrays. In addition, these organic semiconductor single-crystal micro-nanowire arrays controlled by a brush can be combined with insulating layers and source-drain-gate electrodes to form field-effect transistors, thus gaining practical application.

Description

technical field [0001] The invention belongs to the field of organic electronics and relates to a method for preparing an organic semiconductor single crystal micro-nano line array by using a writing brush. Background technique [0002] Organic single-crystal micro-nanowire arrays not only have the advantages of single crystals, but also have no grain boundaries and high-density structural defects, which are conducive to obtaining high-performance devices (Advanced Functional Materials2013, 23, 4776; AIP ConferenceProceedings2014, 1576, 42; Scientific Reports 2013, 3,3248; Nanotechnology2013,24,355201; Journal ofMaterials Chemistry C,2014,2,1314); more importantly, it can realize the patterning of semiconductors, which can be combined with patterned electrodes to realize efficient and highly integrated organic Preparation of electronic devices (ScienceBulletin 2015, 60, 1122; Nanoscale 2014, 6, 1323; ACS Applied Materials & Interfaces 2013, 5, 5757). And in field effect tra...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/05H01L51/40
CPCH10K10/00H10K10/46
Inventor 汤庆鑫刘益春童艳红张鹏
Owner NORTHEAST NORMAL UNIVERSITY
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