Glass film containing rare-earth-ion-doped Cs2LiLaI6 microcrystalline and preparation method thereof
A technology of rare earth ions and glass thin films, applied in the field of glass thin films, can solve problems such as device development limitations, achieve superior flickering, overcome incomplete uniformity, and prevent decomposition and volatilization effects
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Embodiment 1
[0043] Cs doped with rare earth ions 2 LiLaI 6 The preparation method of the glass thin film of crystallite comprises following specific steps:
[0044] (1), prepare the raw materials in molar ratio: ethyl orthosilicate: niobium ethoxide: gallium ethoxide: cesium iodide: lithium iodide: lanthanum iodide: cerium iodide = 66: 30: 20: 16: 8: 8 : 1, taking by weighing a total amount of analytically pure raw materials of 30 grams, stand-by;
[0045] (2), the hydrolysis of gallium ethoxide: dissolve the gallium ethoxide weighed in step (1) in dehydrated alcohol, the molar ratio of dehydrated alcohol and gallium ethoxide is 2.5: 1, add acetylacetone rapidly, acetylacetone and gallium ethoxide The volume ratio of the solution is 0.8:1, and strong magnetic stirring is carried out, and distilled water is gradually added dropwise. The molar ratio of distilled water to gallium ethyl alcohol is 0.6:1, and the hydrolysis reaction is carried out at room temperature for 1 hour to prepare so...
Embodiment 2
[0056] It is basically the same as Example 1, except that in the step (1), the raw materials are prepared according to the following molar ratios: ethyl orthosilicate: niobium ethylate: gallium ethylate: cesium iodide: lithium iodide: lanthanum iodide: iodide Europium=68:24:10:24:12:12:3, each preparation raw material is weighed respectively; In step (8), the pulling speed of the glass substrate in the gel solution is controlled at 1 mm / s, and the pulling speed is repeated 5 times, each pulling interval is 15 minutes; in step (9), be warming up to 100 ℃ with the rate of 50 ℃ per hour, then heat up the furnace to 340 ℃ with the rate of 50 ℃ per hour; ), gradually raise the temperature of the furnace to 550°C, and react at this temperature for 2 hours to obtain Eu-containing 3+ Ion-doped Cs 2 LiLaI 6 Microcrystalline 68SiO 2 -12Nb 2 o s -5Ga 2 o 3 -12Cs 2 LiLaI 6 -3EuI 3 System glass film.
[0057] For prepared Eu-containing 3+ Ion-doped Cs 2 LiLaI 6 Spectral prope...
Embodiment 3
[0059] It is basically the same as Example 1, except that in the step (1), the raw materials are prepared according to the following molar ratios: ethyl orthosilicate: niobium ethylate: gallium ethylate: cesium iodide: lithium iodide: lanthanum iodide: iodide Terbium=67:26:16:20:10:10:2, weigh each preparation raw material respectively; in step (8), the pulling speed of the glass substrate in the gel solution is controlled at 0.6 mm / s, and the pulling speed is repeated 3 times, each pulling interval is 15 minutes; in step (9), the rate of 40 ℃ per hour is heated to 100 ℃, and then the furnace is heated to 340 ℃ with the rate of 40 ℃ per hour; in step (10 ), gradually raise the temperature of the furnace to 540°C, and react at this temperature for 3 hours to obtain Tb-containing 3+ Ion-doped Cs 2 LiLaI 6 Microcrystalline 67SiO 2 -13Nb 2 o s -8Ga 2 o 3 -10Cs 2 LiLaI 6 -2TbI 3 System glass film.
[0060] For prepared Tb-containing 3+ Ion-doped Cs 2 LiLaI 6 Spectral ...
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