GaN-based double heterojunction HEMT (High Electron Mobility Transistor) device and manufacturing method thereof

Abstract

The invention discloses a GaN-based double heterojunction HEMT (High Electron Mobility Transistor) device and a manufacturing method thereof. A structure of the device sequentially comprises a GaN buffer layer, an AlInN barrier layer, a GaN channel layer, an AlGaN isolation layer and an AlGaN barrier layer which are sequentially formed on a sapphire substrate, an AlGaN gate dielectric layer, a source electrode, a grid electrode and a drain electrode formed on the AlGaN gate dielectric layer, an Si3N4 source grid insulation layer formed between the source electrode and the grid electrode, and an Si3N4 drain grid insulation layer formed between the source electrode and the drain electrode. The manufacturing method is characterized by comprising the following steps of adding a layer of AlInN barrier layer between the GaN buffer layer and the GaN channel layer of a conventional GaN HEMT device, utilizing the piezoelectric polarization property of AlInN materials to reduce the current collapse of the device, and forming an AlGaN/GaN/AlInN quantum well structure, so that the binding force on two-dimension electron gas is further improved, and the current collapse is reduced.

Description

technical field [0001] The invention relates to electronic component technology, and specifically refers to a GaN-based double heterojunction HEMT device and a manufacturing method thereof. technical background [0002] AlGaN / GaN heterojunction high electron mobility transistor (HEMT) has attracted the attention of many researchers in the semiconductor field in the past decade because of its excellent performance in high-power, high-frequency and high-temperature applications. However, the current collapse effect and self-heating effect seriously restrict the performance and reliability of GaN devices. In order to obtain higher performance and higher power AlGaN / GaN HEMT devices, researchers have invented some optimized structures based on AlGaN / GaN structures, such as: in 2004, W. Lanfort of the State University of New York and others invented the AlGaN / InGaN / GaN double Heterogeneous structure. In 2009, O.Katz et al. from the Israel Institute of Technology and Engineering ...

AI Technical Summary

Problems solved by technology

The integrated structure of GaN channel and GaN buffer layer will cause some problems: under the first RF working condition, surface traps and GaN buffer layer body traps will capture hot electrons scattered in the channel, resulting in current collapse, which will reduce the microwave output current; Under two direct current conditions, the hot electron effect will cause the transfer of electrons between the valleys, resulting in a decrease in the saturation voltage of the device

However, there are still great defects in this structure. First, the semi-insulating GaN buffer layer introduces parasitic current, which reduces the device switching ratio and device performance; second, the current collapse phenomenon occurs when the device operates under a high electric field. Electron gas accelerates under high electric field to form thermal electron overflow channel and is trapped by traps in the buffer layer

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