Technology of preparing nano-Schottky structure by physical method

Abstract

The invention discloses the process for preparing a nanometer schottky structure through utilizing a physical method and relates to a new method through which the dispersal-uniform and dimension-consistent nanometer schottky structure is prepared on the basis of the boiled colloid droplet technology. According to the method, a proper substrate is selected, and the nanometer schottky structure is prepared through boiling a colloidal solution. In the preparation process, not only can colloidal solutions with different materials be selected, but also the colloidal solutions of one same material can have different concentrations and different dimensions. Compared with other nanometer schottky structure preparation methods in the prior art, nanometer particles having better dimension consistency and more uniform dispersal property can be acquired through the method, operation is simple and convenient, the method further has advantages of good controllability and high repeatability, and thereby abundant nanometer schottky structure materials can be prepared.

Description

technical field [0001] The invention relates to a preparation method of a micro electronic device, in particular to a preparation method of a nanostructure electronic device, which is applied in the fields of nano semiconductor electronic devices and optoelectronic devices. Background technique [0002] The higher the integration of integrated circuits, the higher the manufacturing precision in the manufacturing process (that is, the smaller the minimum line width of the photolithography process), and the smaller the transistor size in the circuit. Therefore, it is necessary to explore the performance of nano-devices. No semiconductor technology can do without a metallization system. The so-called metallization system includes the interconnection lines of each device unit, metal-semiconductor contacts (Schottky barrier contacts and ohmic contacts) and gate electrodes. Moreover, any semiconductor device has a common basic structure, that is, the input of energy and the funct...

AI Technical Summary

Problems solved by technology

[0006] 1. The combination of the sample and the substrate is not good;

[0007] 2. Since the experimental instrument is affected by various factors, it is impossible to obtain nanoparticles with consistent size distribution;

[0008] 3. Many factors in the reaction process lead to poor repeatability of the experimental results, such as environmental humidity, drug purity and gas impurities, etc.;

[0009] 4. There are many restrictions on sample preparation, only metal nanoparticles or nano-films can be prepared, and multi-layer films of compounds such as oxides and nitrides cannot be prepared.

However, the size of these nanoclusters or nanoislands varies with the treatment conditions. Sometimes even if the treatment conditions are the same, the size distribution of the obtained nanoclusters is not uniform, and sometimes agglomeration occurs. Cannot get very well separated nanoparticles

The preparation process of the self-assembly method usually takes several hours or a few days, and the nano-Schottky junction prepared by the spin-coating method takes a long time and has low efficiency, which cannot meet the needs of industrial preparation of the nano-Schottky structure.