Method for preparing transition metal-doped ZnO nanowire through hydrothermal method

Abstract

The invention discloses a method for preparing a transition metal-doped ZnO nanowire through a hydrothermal method. The method comprises the steps that quartz is adopted as a substrate, and ZnO seed crystals are prepared through a magnetron sputtering method or a sol-gel method; a ZnO target is adopted as a target material; a ZnO nano-array grows by adopting the hydrothermal method; a growth solution is prepared from an original solution and a catalyst, wherein a zinc salt and transition metal salt aqueous solution with the concentration of 0.04-0.08 mol / L is taken as the original solution, hexamethylenetetramine is taken as the catalyst, 50 ml of the growth solution is taken to be added into a sealed reaction kettle, the quartz substrate with the prepared ZnO seed crystals is perpendicularly suspended in the sealed reaction kettle containing the growth solution, and then the reaction kettle is placed in an oven; after 3-5 h, growth is finished, and the reaction kettle is taken out; the reaction kettle is naturally cooled to room temperature, washed and blow-dried, and then the transition metal-doped ZnO nanowire is obtained. The transition metal-doped ZnO nanowire is stable in deposition rate, capable of easily controlling the membrane thickness, good in repeatability and high in adhesion strength with the substrate, has the high transmittance and good electrical property, is low in cost and safe in operation and is applied to the fields of gas-sensitive materials, sensors and optical detectors and the like.

Description

technical field [0001] The invention relates to the technical field of optical materials, in particular to a method for preparing transition metal-doped ZnO nanowires by a hydrothermal method. Background technique [0002] Zinc oxide (ZnO) is a II-VI wide bandgap oxide semiconductor material with a bandwidth of about 3.37eV. It exhibits good n-type semiconductor performance and has good optoelectronic properties. ZnO has the characteristics of low preparation cost and low growth temperature, which is beneficial to reduce equipment cost, inhibit solid phase outdiffusion, improve film quality, and is easy to achieve doping. At the same time, ZnO film is rich in raw materials, non-toxic, and has no pollution to the environment. It is an environmentally friendly material and has excellent performance in various fields such as optoelectronics, piezoelectricity, thermoelectricity, ferroelectricity, and ferromagnetism. It has been widely used in Surface acoustic wave devices, sola...

AI Technical Summary

Problems solved by technology

Among them, the chemical vapor phase method and the electrochemical deposition method have high energy consumption, expensive reaction equipment, harsh reaction conditions and complicated operation.