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Adhesive tape for protecting semiconductor wafer surface and method for processing semiconductor wafer

A processing method and semiconductor technology, which can be used in semiconductor/solid-state device manufacturing, film/sheet-like adhesives, adhesives, etc., and can solve the problems of increased adhesion of surface protection tapes, poor peeling of wafers, and reduced peelability. Achieve the effect of excellent adhesion, excellent peelability, and less edge bulge

Active Publication Date: 2017-08-18
FURUKAWA ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] However, since the ultraviolet curable adhesive layer has high reactivity, if the wafer surface is modified, the components of the adhesive layer may react with the wafer surface to cause peeling failure or wafer cracking.
In addition, the surface of the wafer may be provided with an insulating resin layer containing polyimide or the like and a conductor wiring pattern. If the insulating resin layer is present on the wafer surface, the adhesive force of the surface protection tape will increase and the peelability will decrease.

Method used

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  • Adhesive tape for protecting semiconductor wafer surface and method for processing semiconductor wafer
  • Adhesive tape for protecting semiconductor wafer surface and method for processing semiconductor wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0198] 50 parts by mass of a urethane acrylate oligomer (manufactured by Shin-Nakamura Chemical Industry Co., Ltd.) with a weight average molecular weight of 3500, 50 parts by mass of isobornyl acrylate, and Irgacure 184 (manufactured by BASF) as a photopolymerization initiator were mixed. ) 5.0 parts by mass to obtain an ultraviolet curable resin composition. The obtained ultraviolet curable resin composition was coated on a PET film (manufactured by Toray Co., Ltd.: thickness 38 μm) as a casting process sheet with a thickness of 270 μm by a fountain die method to form a resin combination. object layer. Immediately after coating, the same PET film was further laminated on the resin composition layer, and thereafter, a high-pressure mercury lamp (160 W / cm, height 10 cm) was used to emit light at 500 mJ / cm 2 Under the condition of ultraviolet ray irradiation, the resin composition layer was crosslinked / cured, and a base film with a thickness of 270 μm was obtained.

[0199] 1...

Embodiment 2

[0203] 2.0 mol% of methacrylic acid, 70 mol% of 2-ethylhexyl acrylate, and 28 mol% of 2-hydroxyethyl acrylate were mixed and polymerized in a solution to obtain a polymer solution. In the solution, 10 parts by mass of 2-methacryloyloxyethyl isocyanate (manufactured by Showa Denko Co., Ltd., Karenz MOI) was mixed with 100 parts by mass of the polymer to introduce an ethylenically unsaturated group into the hydroxyl group , thereby synthesizing an ethylenically unsaturated group-containing acrylic copolymer polymer (weight average molecular weight: 500,000, hydroxyl value: 50.8 mgKOH / g, acid value: 10.5 mgKOH / g).

[0204] In this ethylenically unsaturated group-containing acrylic copolymer polymer, 0.5 parts by mass of CORONET L (manufactured by Nippon Polyurethane Industry Co., Ltd.) as a crosslinking agent and Irgacure 184 (manufactured by BASF Corporation) as a photopolymerization initiator were mixed. ) 5.0 parts by mass to obtain an adhesive composition.

[0205] The obtai...

Embodiment 3

[0207] 4.0 mol% of methacrylic acid, 76 mol% of 2-ethylhexyl acrylate, and 20 mol% of 2-hydroxyethyl acrylate were mixed and polymerized in a solution to obtain a polymer solution. In the solution, 10 parts by mass of 2-acryloyloxyethyl isocyanate (manufactured by Showa Denko Co., Ltd., Karenz AOI) was mixed with 100 parts by mass of the polymer to introduce an ethylenically unsaturated group into the hydroxyl group. This synthesized an ethylenically unsaturated group-containing acrylic copolymer polymer (weight average molecular weight: 350,000, hydroxyl value: 33.8 mgKOH / g, acid value: 19.9 mgKOH / g).

[0208] 1.5 parts by mass of CORONET L (manufactured by Nippon Polyurethane Industry Co., Ltd.) and 0.3 parts by mass of TETRAD-X (manufactured by Mitsubishi Gas Chemical Co., Ltd.) were mixed with this ethylenically unsaturated group-containing acrylic copolymer polymer. Parts by mass, 5.0 parts by mass of Irgacure 651 (manufactured by BASF) as a photopolymerization initiator,...

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Abstract

Provided is an adhesive tape for protecting a semiconductor wafer surface having bumps, said adhesive tape having an ultraviolet curable adhesive layer on a substrate film, wherein the adhesive layer comprises a (meth)acrylic polymer having a weight average molecular weight of 10,000 to 2,000,000 and a radiation curable carbon-carbon double bond-containing group, a hydroxyl group and a carboxy group; the surface free energy of the adhesive layer surface before ultraviolet irradiation is at least 25.5 mN / m and less than 35 mN / m; the surface of the adhesive layer after having been cured with ultraviolet irradiation has a surface free energy that is at least 5 mN / m higher than that of the surface of the adhesive layer before ultraviolet irradiation and has a small contact angle with respect to diiodomethane; the polymer constituting the adhesive layer surface having a hydroxyl value of 30-100 mg KOH / g; and the polymer constituting the adhesive layer surface has an acid value of 5-65 mg KOH / g. Also provided is a method for processing a semiconductor wafer having bumps.

Description

technical field [0001] The invention relates to an adhesive tape for protecting the surface of a semiconductor wafer and a processing method for the semiconductor wafer. More specifically, it relates to a tape for protecting the surface of a semiconductor wafer used when grinding a semiconductor wafer into a thin film or the like, and a method for processing a semiconductor wafer. Background technique [0002] A semiconductor package is manufactured by slicing a high-purity silicon single crystal or the like into a semiconductor wafer, and then forming an integrated circuit on the surface of the wafer by ion implantation, etching, etc., thereby manufacturing a semiconductor package. The semiconductor wafer is processed to a desired thickness by grinding, polishing, or the like on the back surface of the semiconductor wafer on which the integrated circuit is formed. At this time, in order to protect the integrated circuits formed on the surface of the semiconductor wafer, a ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09J7/02C09J4/00C09J133/00H01L21/304C09J7/20
CPCC09J4/00C09J133/00H01L21/304C09J7/20H01L21/6836C09J2203/326C09J2301/312
Inventor 横井启时内山具朗
Owner FURUKAWA ELECTRIC CO LTD
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