Unlock instant, AI-driven research and patent intelligence for your innovation.

Preparation Technology of High Selectivity Shallow Trench Isolation Chemical Mechanical Polishing Slurry

A shallow groove isolation and chemical mechanical technology, which is applied to polishing compositions containing abrasives, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem that the conversion rate cannot reach more than 90%, and achieve high selectivity, Good wear resistance, the effect of particle concentration

Active Publication Date: 2020-05-12
BAOTOU TIANJIAO SEIMI POLISHING POWDER CO LTD
View PDF15 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The difference in this method is that the cerium hydroxide (Ce(OH) 3 ) is transformed into high-valent cerium hydroxide (Ce(OH) 4 ), its disadvantage is that the conversion rate cannot reach more than 90%, and the hydroxide is Ce(OH) 3 and Ce(OH) 4 mixture

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation Technology of High Selectivity Shallow Trench Isolation Chemical Mechanical Polishing Slurry
  • Preparation Technology of High Selectivity Shallow Trench Isolation Chemical Mechanical Polishing Slurry
  • Preparation Technology of High Selectivity Shallow Trench Isolation Chemical Mechanical Polishing Slurry

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0080] The prepared CeO 2 10Kg of powder is mixed with 50Kg of deionized water in a 500L stainless steel mixing tank, processed by a high-speed shear emulsifier (Fluko FM140) for 40 minutes, centrifuged at 6000 rpm for 20 minutes with a centrifuge (Germany Sigma 8KS), and the suspension is collected. liquid and recover the precipitate. The cerium oxide content of this slurry is 15%.

[0081] Such as Figure 5 Shown, is the cerium oxide (CeO 2 ) particle size distribution.

[0082] The median particle size of the particles in the suspension is 0.12 μm, and the maximum particle size is 0.8 μm.

[0083] Add 180 grams of polyammonium methacrylate 8000 (5% aqueous solution) to this suspension, 4 grams of polyvinyl alcohol (molecular weight 5000), 4 grams of polyethylene glycol (molecular weight 10000) and use 400KHz ultrasonic waves to stir the slurry The shaker shakes for 15 minutes. Add 2500ml of prepared pH buffer regulator, and measure pH=4.5. The polishing solution prep...

Embodiment 2

[0085] The prepared CeO 2 Mix 5Kg of powder with 15Kg of deionized water, sand mill (NETZSCH Alpha33, grinding media zirconia 0.3mm) circular grinding for 2 hours, high-speed shear emulsifier (Fluko FM140) circular shearing treatment for 60 minutes, 6000 rpm centrifugation for 30 minutes minutes to collect the suspension.

[0086] To 12L of this suspension, add 10 grams of potassium polyacrylate, 4 grams of sodium dodecylsulfonate, 120 ml of acetic acid-sodium acetate-sodium citrate buffer solution (dissolve 30 grams of glacial acetic acid, 41 grams of sodium acetate, 98 grams of sodium citrate). Measure pH = 5.8. 400 Hz ultrasonic dispersion for 30 minutes.

[0087] Such as Figure 6 Shown, is the cerium oxide (CeO 2 ) particle size distribution.

[0088] Determination of particle size D 50 :0.22um, D max : 0.88μm; Zeta potential 25.23mv.

Embodiment 3

[0090] The prepared CeO 2 1Kg powder is mixed with 30Kg deionized water, sand mill (NETZSCH Alpha33, grinding medium zirconia 0.3mm) circular grinding for 3 hours, high-speed shear emulsifier (Fluko FM140) circular shearing treatment for 30 minutes, with 1μm micropore A filter filters the sheared slurry.

[0091] Add 100ml of polyammonium methacrylate (5% aqueous solution), 2g of sodium dodecylsulfonate, 2g of ethylenediaminetetraacetic acid and 2g of disodium ethylenediaminetetraacetic acid to 10L of suspension, 400Hz ultrasonic dispersion for 30 minutes . Add 500ml of the prepared pH buffer solution, measure the particle size D 50 :0.11μm,D max : 0.98μm; Zeta potential 22.35mv.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
specific surface areaaaaaaaaaaa
Login to View More

Abstract

The invention discloses high-selectivity shallow-groove-isolated chemical-mechanical polishing slurry. The slurry is prepared from water, cerium oxide, dispersants, salts of poly(methacrylic acid) and pH buffer regulators; by mass, the content of the cerium oxide is 0.3-25%, the salts of poly(methacrylic acid) are 0.05-5% of the solid cerium oxide, the dispersants are 10-50% of the salts of poly(methacrylic acid), and the content of the pH buffer regulators is 4-6%. The invention further discloses a preparation process of the high-selectivity shallow-groove-isolated chemical-mechanical polishing slurry. Through the adoption of the preparation process, the obtained CMP cerium oxide polishing slurry has the advantages of being high in selectivity and cutting velocity, good in abrasion resistance, concentrated in particles, not agglomerated and the like, and is suitable for industrial production and control.

Description

technical field [0001] The present invention relates to one kind, in particular, relates to a kind of high-selectivity shallow trench isolation chemical mechanical polishing slurry preparation process. Background technique [0002] Integrated circuit (IC) is the core of the electronic information industry. The development of IC is inseparable from silicon wafers with complete crystal, high purity, high precision and high surface quality. With the development of ultra-large-scale integrated circuit (ULSI) technology, the line width of integrated circuits has changed from 0.35 μm and 0.25 μm in the 1990s to 0.18 μm in this century and 0.13 μm at present and 0.08 μm in the next two years. The flatness requirements are getting higher and higher. [0003] Such as figure 1 Shown is the polishing principle diagram of the polishing machine in the prior art. [0004] The chemical mechanical polishing (CMP) process is the preferred process for silicon wafer planarization. The polis...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02H01L21/768
CPCC09G1/02H01L21/76819
Inventor 崔凌霄谢兵杨国胜张存瑞刘致文赵延程磊杜悦张倩悦
Owner BAOTOU TIANJIAO SEIMI POLISHING POWDER CO LTD