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Dielectric paste for aluminium alloy substrate thick film circuit, and preparation technology for dielectric paste

A technology of aluminum alloy substrate and dielectric slurry, which is applied to circuits, electrical components, insulators, etc., can solve the problems of easily damaged substrates, high sintering temperature, breakdown voltage and insulation resistance that cannot meet the high requirements of aluminum alloy substrates for electric heating elements, etc. , to achieve the effect of low melting temperature, low sintering temperature and easy production

Inactive Publication Date: 2017-11-17
DONGGUAN COREHELM ELECTRONICS MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, the relatively mature dielectric pastes on the market are almost all applied to stainless steel substrates, and there are few reports on dielectric pastes applied to aluminum alloy substrates. Insulating dielectric slurry and its preparation method, but the above-mentioned dielectric slurry for aluminum substrates has a relatively high sintering temperature, the substrate is easily damaged during preparation, and the properties such as breakdown voltage and insulation resistance cannot meet the high requirements of aluminum alloy substrate electric heating elements.

Method used

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Examples

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Effect test

Embodiment 1

[0026] This embodiment provides a dielectric paste for thick-film circuits on aluminum alloy substrates, which consists of the following components in terms of mass percentage: 75% of glass-ceramic powder, and 25% of binder. Wherein, the glass-ceramic powder consists of the following components in mass percent: SiO 2 20%, Bi 2 o 3 30%, B 2 o 3 15%, BaO 10%, CaO 5%, ZnO 5%, Al 2 o 3 5%, V 2 o 5 4%, TiO 2 5%, Co. 2 o 3 1%, the particle size of the glass-ceramic powder described in this example is 1 μm, the softening point is 350°C, and the average coefficient of linear expansion is 18×10 -6 / °C.

[0027]The binder is an organic binder, which consists of the following components in parts by weight: 40 parts of organic solvent butyl carbitol, 20 parts of polymer thickener ethyl cellulose, plasticizer phthalate 1 part of dibutyl formate, 5 parts of polymethacrylic acid amine as dispersant, 1 part of polyether modified silicone as antifoaming agent, 5 parts of hyd...

Embodiment 2

[0034] This embodiment provides a dielectric paste for thick-film circuits on an aluminum alloy substrate, which consists of the following components in terms of mass percentage: 60% of glass-ceramic powder, and 40% of binder. Wherein, the glass-ceramic powder consists of the following components in mass percent: SiO 2 40%, Bi 2 o 3 20%, B 2 o 3 5%, BaO 15%, CaO 10%, ZnO 1%, Al 2 o 3 1%, V 2 o 5 1%, TiO 2 6%, Co. 2 o 3 1%, the particle size of the glass-ceramic powder described in this embodiment is 3 μm, the softening point is 450° C., and the average coefficient of linear expansion is 25×10 -6 / °C.

[0035] The binder is an organic binder, which consists of the following components in parts by weight: 75 parts of organic solvent turpentine, 5 parts of polymer thickener polyvinyl butyral, plasticizer phthalate 5 parts of ethyl ester, 1 part of triamine citrate as a dispersant, 5 parts of polyether defoamer, and 1 part of cetyl alcohol as a thixotropic agent...

Embodiment 3

[0042] This embodiment provides a dielectric paste for thick-film circuits on aluminum alloy substrates, which consists of the following components in terms of mass percentage: 70% of glass-ceramic powder, and 30% of binder. Wherein, the glass-ceramic powder consists of the following components in mass percent: SiO 2 30%, Bi 2 o 3 25%, B 2 o 3 8%, BaO 5%, CaO 8%, ZnO 2%, Al 2 o 3 4%, V 2 o 5 5%, TiO 2 10%, Co. 2 o 3 3%, the particle size of the glass-ceramic powder described in this embodiment is 2 μm, the softening point is 400° C., and the average linear expansion coefficient is 20×10 -6 / °C.

[0043] The binder is an organic binder, which consists of the following components in parts by weight:

[0044] Organic solvent: 55 parts of a mixture of terpineol, diethylene glycol monomethyl ether and diethylene glycol dibutyl ether, the mass ratio of the three is 1:1:2; polymer thickener: hydrogenated rosin resin and acrylic acid 3 parts of ester resin mixture, ...

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Abstract

The invention discloses a dielectric slurry for aluminum alloy substrate thick-film circuits and a preparation process thereof. The slurry is composed of the following components: 60-75% of glass-ceramic powder and 25-40% of binder; wherein, Glass-ceramic powder is composed of SiO2, Bi2O3, B2O3, BaO, CaO, ZnO, Al2O3, V2O5, TiO2, Co2O3. The glass-ceramic powder prepared by using the above raw materials has a low melting temperature, so that the sintering temperature is lower than the melting temperature of the aluminum alloy substrate when the dielectric layer is prepared, and the substrate will not be damaged when the dielectric layer is prepared. In addition, the raw materials do not contain lead, which meets environmental protection requirements. . The thermal expansion coefficient of the obtained dielectric layer matches the aluminum alloy substrate, has good bonding performance, and can form a solid network structure, making the composite glass-ceramic insulating medium have excellent hardness and flexibility, which can meet the requirements of high-power aluminum alloy substrate thick film Special requirements when the circuit is in a harsh working environment. At the same time, the preparation process of the slurry is simple and easy to produce, and the obtained medium slurry has excellent performance.

Description

technical field [0001] The invention belongs to the technical field of thick-film circuits, and relates to a dielectric slurry for making thick-film circuits and its preparation process, in particular to a lead-free and alkali-free medium-temperature sintering medium slurry for aluminum alloy substrates and its preparation craft. Background technique [0002] Thick film circuit is a kind of integrated circuit, which refers to a circuit unit with certain functions made of resistors, inductors, capacitors, semiconductor components and interconnection wires on a substrate through printing, sintering and welding processes. It has flexible design, simple process, low cost, and can withstand higher voltage, higher power and current, and has been widely used in the field of industrial electronic products. [0003] Thick film is a film layer of several microns to tens of microns prepared by printing and sintering technology on the substrate. The material for manufacturing thick fil...

Claims

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Application Information

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IPC IPC(8): H01B3/08H01B19/00
CPCH01B3/08H01B3/087H01B19/00
Inventor 高丽萍苏冠贤
Owner DONGGUAN COREHELM ELECTRONICS MATERIAL TECH CO LTD
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