Photo-anode preparation method for improving water photolysis performance and prepared photo-anode structure
A technology of photoanode and photolysis of water, which is applied in the direction of electrodes, electrolysis process, electrolysis components, etc. It can solve the problem of high cost of silicon/iron oxide double absorption layer electrode preparation, serious silicon/iron oxide interface recombination, and serious iron oxide surface recombination and other problems, achieve perfect interface properties, small surface defect state density, and improve the effect of severe interface recombination
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Embodiment 1
[0043] A kind of photoanode preparation method that improves photolysis water performance in the present embodiment, it comprises the following steps:
[0044] a. Use an n-type silicon wafer with a resistivity of 0.01-0.05Ω·cm, refer to the attached figure 1 .
[0045] b1. Carry out standard RCA cleaning process on the silicon wafer, spin-coat the photoresist, perform ultraviolet exposure, and then develop to obtain the photoresist micro-column array (square arrangement with a diameter of 4 μm and a period of 8 μm) pattern;
[0046] b2. Electron beam evaporation is used to evaporate titanium and gold films, respectively, with a thickness of 3nm and 40nm;
[0047] b3. Corrosion in a mixed aqueous solution of hydrofluoric acid and hydrogen peroxide (concentrations of 8 mol / L and 0.4 mol / L, respectively) for 20 hours at a temperature of 5°C to obtain a silicon micron wire array (length 30 μm, diameter 4 μm) , a square arrangement with a period of 8 μm), refer to the attached ...
Embodiment 2
[0056] A kind of photoanode preparation method that improves photolysis water performance in the present embodiment, it comprises the following steps:
[0057] a. Use an n-type silicon wafer with a resistivity of 0.01-0.05Ω·cm, refer to the attached figure 1 .
[0058] b1. Carry out standard RCA cleaning process on the silicon wafer, spin-coat the photoresist, perform ultraviolet exposure, and then develop to obtain the photoresist micro-column array (square arrangement with a diameter of 3 μm and a period of 6 μm) pattern;
[0059] b2. Electron beam evaporation is used to evaporate titanium and gold films, respectively, with a thickness of 3nm and 40nm;
[0060] b3. Corrosion in a mixed aqueous solution of hydrofluoric acid and hydrogen peroxide (concentrations of 8 mol / L and 0.4 mol / L, respectively) for 20 hours at a temperature of 5°C to obtain a silicon micron line array (length 30 μm, diameter 3 μm) , a square arrangement with a period of 6 μm), refer to the attached ...
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