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Photo-anode preparation method for improving water photolysis performance and prepared photo-anode structure

A technology of photoanode and photolysis of water, which is applied in the direction of electrodes, electrolysis process, electrolysis components, etc. It can solve the problem of high cost of silicon/iron oxide double absorption layer electrode preparation, serious silicon/iron oxide interface recombination, and serious iron oxide surface recombination and other problems, achieve perfect interface properties, small surface defect state density, and improve the effect of severe interface recombination

Active Publication Date: 2018-01-30
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

However, there are still many problems or improvement points in this double absorber layer system: 1) the interface of silicon / iron oxide is seriously recombined; 2) the surface of iron oxide is recombined seriously; 3) the internal resistance of the double absorber layer of silicon / iron oxide is too large; 4) The preparation cost of silicon / iron oxide double absorption layer electrode is relatively high

Method used

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  • Photo-anode preparation method for improving water photolysis performance and prepared photo-anode structure
  • Photo-anode preparation method for improving water photolysis performance and prepared photo-anode structure
  • Photo-anode preparation method for improving water photolysis performance and prepared photo-anode structure

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Embodiment 1

[0043] A kind of photoanode preparation method that improves photolysis water performance in the present embodiment, it comprises the following steps:

[0044] a. Use an n-type silicon wafer with a resistivity of 0.01-0.05Ω·cm, refer to the attached figure 1 .

[0045] b1. Carry out standard RCA cleaning process on the silicon wafer, spin-coat the photoresist, perform ultraviolet exposure, and then develop to obtain the photoresist micro-column array (square arrangement with a diameter of 4 μm and a period of 8 μm) pattern;

[0046] b2. Electron beam evaporation is used to evaporate titanium and gold films, respectively, with a thickness of 3nm and 40nm;

[0047] b3. Corrosion in a mixed aqueous solution of hydrofluoric acid and hydrogen peroxide (concentrations of 8 mol / L and 0.4 mol / L, respectively) for 20 hours at a temperature of 5°C to obtain a silicon micron wire array (length 30 μm, diameter 4 μm) , a square arrangement with a period of 8 μm), refer to the attached ...

Embodiment 2

[0056] A kind of photoanode preparation method that improves photolysis water performance in the present embodiment, it comprises the following steps:

[0057] a. Use an n-type silicon wafer with a resistivity of 0.01-0.05Ω·cm, refer to the attached figure 1 .

[0058] b1. Carry out standard RCA cleaning process on the silicon wafer, spin-coat the photoresist, perform ultraviolet exposure, and then develop to obtain the photoresist micro-column array (square arrangement with a diameter of 3 μm and a period of 6 μm) pattern;

[0059] b2. Electron beam evaporation is used to evaporate titanium and gold films, respectively, with a thickness of 3nm and 40nm;

[0060] b3. Corrosion in a mixed aqueous solution of hydrofluoric acid and hydrogen peroxide (concentrations of 8 mol / L and 0.4 mol / L, respectively) for 20 hours at a temperature of 5°C to obtain a silicon micron line array (length 30 μm, diameter 3 μm) , a square arrangement with a period of 6 μm), refer to the attached ...

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Abstract

The invention discloses a photo-anode preparation method for improving water photolysis performance and a prepared photo-anode structure. The photo-anode preparation method includes the steps: a, adopting n-type silicon slices with the resistivity of 0.01-0.05 omega*cm; b, cleaning the silicon slices and then preparing a silicon micron line array; c, taking the silicon micron line array as a substrate, mixing doped source ion solution into solution containing Fe<3+> to serve as precursor solution for growing an iron oxide layer, and performing annealing pretreatment on the silicon micron linearray substrate adsorbing the precursor solution in air to obtain a silicon / iron oxide micron line array; d, performing annealing post-treatment on a silicon / iron oxide micron line array substrate innitrogen or argon atmosphere; e, depositing a conductive layer at the back of the silicon / iron oxide micron line array substrate obtained in annealing post-treatment, and leading out an external conductor; f, coating the conductive layer with an anti-water insulating layer.

Description

technical field [0001] The invention relates to a photoanode preparation method for improving the performance of photolysis of water and the obtained photoanode structure, belonging to the field of photoelectric conversion and energy. Background technique [0002] In recent years, the research on sunlight-driven water splitting has attracted more and more attention, and photo-water splitting technology may become an effective way to solve problems such as energy crisis and fuel pollution. At present, the photoelectrochemical cell is a main form of configuration to realize photolysis of water. It uses semiconductor photoelectrodes to absorb sunlight to promote the oxidation and reduction of water, that is, to complete the capture of solar energy and convert it into high-energy green fuels (ie H 2 ). However, the promotion of solar hydrogen production has encountered many technical difficulties. Among them, the key issue is that the conversion of solar energy to hydrogen (ST...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B11/04C25B1/04
CPCY02E60/36
Inventor 吴绍龙周忠源李孝峰严继木
Owner SUZHOU UNIV