Gallium-nitride-based device for artificial photosynthesis and preparation method thereof

An artificial photosynthesis, gallium nitride-based technology, applied in the field of gallium nitride-based devices, can solve the problems of mismatching system photocurrent, reducing device performance, and energy conversion efficiency, reducing recombination, promoting charge separation, Emission reduction effect

Active Publication Date: 2018-03-27
HEBEI UNIV OF TECH
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  • Application Information

AI Technical Summary

Problems solved by technology

In 2011, Toyota Corporation of Japan successfully realized artificial photosynthesis for the first time, but the energy conversion efficiency was only 0.04%.
These three studies all use silicon-based cells, the system photocurrent does not match, and there is a large interface reflection between GaN / Si, which will further reduce the device performance

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  • Gallium-nitride-based device for artificial photosynthesis and preparation method thereof

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Embodiment Construction

[0011] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0012] refer to figure 1 , the gallium nitride-based device for artificial photosynthesis of the present invention has a glass substrate, molybdenum layer, Cu(In,Ga)Se successively from bottom to top 2 layer, CdS buffer layer, intrinsic ZnO layer, TCO layer, bonding interface layer, n-type GaN layer, In 0.2 Ga 0.8 N layer and NiO nanoparticle layer.

[0013] Its preparation method is as follows:

[0014] 1) Deposit a molybdenum layer on a clean glass substrate by magnetron sputtering, and then grow Cu(In,Ga)Se on the molybdenum layer by co-evaporation technology 2 layer, and then sequentially deposit a CdS buffer layer, an i-ZnO layer and a TCO layer on the CIGS layer;

[0015] 2) Growth of In on a clean n-type GaN substrate by molecular beam epitaxy 0.2 Ga 0.8 N layer;

[0016] 3) bonding the above-mentioned GaN substrate to the above-...

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Abstract

The invention discloses a gallium-nitride-based device for artificial photosynthesis. The gallium-nitride-based device comprises a glass substrate, a molybdenum layer, a CIGS (Copper-Indium-Gallium-Selenide) layer, a CdS layer, an intrinsic ZnO layer, a TCO layer, a bonding interface layer, a GaN layer, an InGaN layer and an NiO nanoparticle layer from bottom to top. The gallium-nitride-based device is prepared by the following steps: depositing the molybdenum layer on the glass substrate, performing coevaporation to grow the CIGS layer on the molybdenum layer, then depositing the CdS layer, the ZnO layer and the TCO layer in sequence; growing the InGaN layer on the GaN substrate; bonding the GaN substrate on the TCO layer by a bonding technology, then growing the NiO nanoparticle layer onthe surface of the InGaN layer and obtaining the gallium-nitride-based device for the artificial photosynthesis. The gallium-nitride-based device disclosed by the invention has the advantages of highabsorption coefficient, easy current regulation and high stability, can be used in the artificial photosynthesis as a photoanode material and plays a very important role in reducing carbon-dioxide emission and developing and utilizing new energy.

Description

technical field [0001] The invention relates to a gallium nitride-based device, in particular to a gallium nitride-based device for artificial photosynthesis and a preparation method thereof. Background technique [0002] With the depletion of fossil fuels such as coal and oil, human beings are facing a huge energy crisis. While consuming these fossil fuels, they also lead to environmental problems such as global warming, environmental pollution, and the hole in the ozone layer. [0003] Photosynthesis is a biochemical process in which plants, algae and certain bacteria convert carbon dioxide (or hydrogen sulfide) and water into organic matter and release oxygen (or hydrogen) under the irradiation of visible light. As early as the 1990s, some researchers proposed the concept of artificial photosynthesis. Afterwards, artificial photosynthesis experienced a gradual development process from simple to complex, from the classic covalent bond system to supramolecular chemistry, t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01M14/00B82Y30/00C07C51/00
CPCB82Y30/00C07C51/00H01M14/005C07C53/02
Inventor 陈贵锋马苗苗张辉解新建陆书龙
Owner HEBEI UNIV OF TECH
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