High-gain InCaAs detector chip from ultraviolet to near-infrared
A detector chip and near-infrared technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of large system size and weight, complex detection system, and inability to recognize lasers, and achieve low preparation costs, broadened spectral response, Improve the effect of photoresponse
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Embodiment 1
[0031] 1 Sampling and cleaning, using acetone, ethanol and deionized water to ultrasonically clean the sample for 8-3mins;
[0032] 2 deposit SiO2 dielectric layer 4, deposit a silicon nitride diffusion mask 5 with a thickness of 200±30nm by plasma enhanced chemical vapor deposition (PECVD), the substrate temperature is 330±20°C, and the RF power is 40±10W;
[0033] 3 Etching square holes, using inductively coupled plasma (ICP) etching technology on SiO 2 A square hole is opened on the dielectric layer 4, and the etching conditions are as follows: ICP power is 1500W, RF power is 25-50W, chamber pressure is 9.4mTorr, temperature is 5°C, and then etched with hydrofluoric acid buffer solution at room temperature for 10s;
[0034] 4 Transferring graphene 6, using dry transfer technology, transferring graphene with a thickness of 1 atomic layer onto the square hole to cover the entire square hole, and the graphene 6 is in contact with the InGaAs absorbing layer 3 .
[0035] 5. Etc...
Embodiment 2
[0038] 1 Sampling and cleaning, using acetone, ethanol and deionized water to ultrasonically clean the sample for 8-3mins;
[0039] 2 deposit SiO2 dielectric layer 4, deposit a silicon nitride diffusion mask 5 with a thickness of 200±30nm by plasma enhanced chemical vapor deposition (PECVD), the substrate temperature is 330±20°C, and the RF power is 40±10W;
[0040] 3 Etching square holes, using inductively coupled plasma (ICP) etching technology on SiO 2 A square hole is opened on the dielectric layer 4, and the etching conditions are as follows: ICP power is 1500W, RF power is 25-50W, chamber pressure is 9.4mTorr, temperature is 5°C, and then etched with hydrofluoric acid buffer solution at room temperature for 10s;
[0041] 4 Transferring the graphene 6, using dry transfer technology, transferring graphene with a thickness of 3 atomic layers onto the square hole, covering the entire square hole, and the graphene 6 is in contact with the InGaAs absorbing layer 3 .
[0042] ...
Embodiment 3
[0045] 1 Sampling and cleaning, using acetone, ethanol and deionized water to ultrasonically clean the sample for 8-3mins;
[0046] 2 deposit SiO2 dielectric layer 4, deposit a silicon nitride diffusion mask 5 with a thickness of 200±30nm by plasma enhanced chemical vapor deposition (PECVD), the substrate temperature is 330±20°C, and the RF power is 40±10W;
[0047] 3 Etching square holes, using inductively coupled plasma (ICP) etching technology on SiO 2A square hole is opened on the dielectric layer 4, and the etching conditions are as follows: ICP power is 1500W, RF power is 25-50W, chamber pressure is 9.4mTorr, temperature is 5°C, and then etched with hydrofluoric acid buffer solution at room temperature for 10s;
[0048] 4 Transferring the graphene 6, using dry transfer technology, transferring graphene with a thickness of 5 atomic layers onto the square hole to cover the entire square hole, and the graphene 6 is in contact with the InGaAs absorbing layer 3 .
[0049] 5....
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