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Non-contact protection ring single-photon avalanche diode and preparation method thereof

A single-photon avalanche, non-contact technology, applied in the final product manufacturing, sustainable manufacturing/processing, electrical components, etc., can solve the problems of reducing the photon detection efficiency of the device, and it is difficult to trigger an avalanche, so as to facilitate light absorption, The effect of increasing the effective photosensitive area and improving the detection efficiency

Inactive Publication Date: 2018-05-15
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the avalanche electric field is concentrated in the center of the device, the photosensitive area is smaller than the active area of ​​the actual device. If the photon is incident on the edge of the optical window, it is difficult to trigger the avalanche, thus reducing the photon detection efficiency of the device.

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  • Non-contact protection ring single-photon avalanche diode and preparation method thereof
  • Non-contact protection ring single-photon avalanche diode and preparation method thereof
  • Non-contact protection ring single-photon avalanche diode and preparation method thereof

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Embodiment 1

[0039] Embodiments of the present invention propose a single photon avalanche diode detector structure that can effectively suppress edge breakdown and is compatible with standard CMOS processes, see figure 1 , see the description below:

[0040] The detector is mainly composed of P + / Deep N well composed of a photosensitive PN junction and a ring-shaped P well guard ring. The two are separated by a certain distance, and the P well is used to form a guard ring around the photosensitive PN junction to suppress edge breakdown and improve device reliability and detection performance. .

[0041] When the device is working, the P-well guard ring acts as a voltage divider to suppress the increase of the electric field at the edge of the photosensitive area, thereby solving the problem of edge breakdown. In addition, the detector can also increase the effective photosensitive area and increase the detection efficiency.

[0042] In addition, due to the lower doping concentration o...

Embodiment 2

[0044] The embodiment of the present invention also provides a method for manufacturing a non-contact guard ring single photon avalanche diode, comprising the following steps:

[0045] 1) Using standard CMOS processes such as oxidation, photolithography, ion implantation, and annealing to form a lightly doped deep N well on a P-type lightly doped silicon substrate to achieve electrical isolation from other electronic devices and avoid their mutual influence;

[0046]2) Prepare a moderately doped N-type well region in the above-mentioned deep N well region, surround the deep N well region, and then regenerate a thin layer of silicon dioxide;

[0047] 3) Prepare a moderately doped P-type well region in the deep N well as a guard ring for the device;

[0048] 4) A P-type heavily doped region is prepared in the center of the deep N well, which together with the deep N well forms a P + / Deep N well photosensitive PN junction;

[0049] Wherein, the P-type heavily doped region is a...

Embodiment 3

[0057] Attached below Figure 1-4 The scheme in embodiment 1 and 2 is further introduced, see the following description for details:

[0058] figure 1 with figure 2 are the cross-section and top view of the detector respectively, for the convenience of explanation, figure 2 The oxide layer 8 and the metal electrodes 9, 10, 11 are not shown.

[0059] In the illustration, 1 is the substrate. The material of the substrate 1 is a P-type lightly doped silicon wafer, which serves as the supporting part of the designed single photon avalanche diode.

[0060] In the figure, 2 is a lightly doped deep N well. On the one hand, the deep N well 2 is used as a component of the photosensitive PN junction, and on the other hand, it is also used to realize the mutual isolation of the detector and other electronic devices.

[0061] In the illustration, 3 is the N well region, and the N well adopts a medium doping concentration and surrounds the deep N well.

[0062] In the illustration,...

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Abstract

The invention discloses a non-contact protection ring single-photon avalanche diode and a preparation method thereof. The non-contact protection ring single-photon avalanche diode is composed of a light-sensitive PN junction formed by a P+ / deep N well, and an annular P well protection ring. The light-sensitive PN junction and the annular P well protection ring are spaced apart at a certain distance. A protection ring is formed by means of the P well around the light-sensitive PN junction to inhibit the edge breakdown phenomenon. The P well protection ring plays the role of a voltage divider, and the increase of an edge electric field of a light-sensitive region is inhibited. Through the standard CMOS process, a lightly-doped deep N-well is formed on a P-type lightly-doped silicon substrate, so that the electrical isolation with other electronic devices is achieved. The mutual influence between devices is avoided. A cathode, an anode and a contact through hole are etched out, and then alayer of aluminum film is deposited. After that, an electrode pattern is formed through the photoetching process. A high-layer interconnection metal is prepared through photoetching, etching and metallization processes. The metal is used for leading an electrical signal of the SPAD to a contact pad. A silicon oxide / silicon nitride passivation layer is sequentially deposited on the upper surface of a chip. Therefore, the scratch of the chip and the influence of the external environment can be avoided.

Description

technical field [0001] The invention relates to the fields of photoelectric detection and photoelectric sensors, in particular to a single-photon avalanche diode (SPAD) structure compatible with a standard complementary metal-oxide-semiconductor (CMOS) process, and the use of oxidation, photolithography in the standard CMOS process , etching, ion implantation, metallization and other processes to achieve the preparation method. Background technique [0002] As an extremely weak light detection technology, single photon detection has become one of the most active fields of international research in recent years due to its great scientific research value and strategic position. It has broad applications in quantum communication, astronomical photometry, medical imaging and radar detection application prospects. Among them, the single-photon detector, as the core part of the technology, determines the performance upper limit of the entire single-photon detection system, so des...

Claims

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Application Information

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IPC IPC(8): H01L31/107H01L31/0352H01L31/18
CPCH01L31/0352H01L31/107H01L31/1804Y02P70/50
Inventor 谢生吴佳骏毛陆虹
Owner TIANJIN UNIV
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