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High-mobility co-doped tellurium zinc cadmium crystal used for nuclear radiation detection and preparation method of crystal

A high-mobility, co-doping technology, applied in crystal growth, chemical instruments and methods, single crystal growth, etc., to improve carrier transport performance, electron mobility, and resistivity

Inactive Publication Date: 2018-06-01
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is no report on the effect of rare earth doping on electron mobility.

Method used

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  • High-mobility co-doped tellurium zinc cadmium crystal used for nuclear radiation detection and preparation method of crystal
  • High-mobility co-doped tellurium zinc cadmium crystal used for nuclear radiation detection and preparation method of crystal
  • High-mobility co-doped tellurium zinc cadmium crystal used for nuclear radiation detection and preparation method of crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Step 1: put the CZT raw material mixed with 100ppm In and 1000ppm Yb into a quartz ampoule and mix well.

[0038] The second step: vacuumize the quartz, the vacuum degree reaches 5×10 -5 Seal the tube at Pa, and then place the quartz ampoule in ACRT-B crystal growth equipment for growth.

[0039] Step 3: Take out the grown quartz ampoule, cut it with an external circular cutting machine, take out the crystal ingot, and cut the crystal ingot and wafer with a diamond wire cutting machine.

[0040] Step 4: Plate the cut 5*5mm wafer with electrodes, measure the resistivity, and use the laser-induced transient photocurrent test system to measure the electron mobility. The electron mobility is 1340cm 2 / Vs.

Embodiment 2

[0042] Step 1: put the CZT raw material mixed with 50ppm In and 800ppm Yb into a quartz ampoule and mix well.

[0043] The second step: vacuumize the quartz, the vacuum degree reaches 5×10 -5 Seal the tube at Pa, and then place the quartz ampoule in ACRT-B crystal growth equipment for growth.

[0044] The growth parameters are as follows: set the target temperature in the high temperature zone as 1200-1150°C, the low temperature zone as 1050-1000°C, and the heating time as 12 hours; after reaching the target temperature, overheat at 10-50°C above the melting point for 1-24 hours, Finally, the crucible is lowered at a rate of 1-2 mm per hour, and the supporting rod stops falling after 75 to 150 hours after starting to drop, and the temperature is cooled to room temperature.

[0045] Step 3: Take out the grown quartz ampoule, cut it with an external circular cutting machine, take out the crystal ingot, and cut the crystal ingot and wafer with a diamond wire cutting machine.

...

Embodiment 3

[0048] Step 1: put the CZT raw material mixed with 30ppm In and 500ppm Yb into a quartz ampoule and mix well.

[0049] The second step: vacuumize the quartz, the vacuum degree reaches 5×10 -5 Seal the tube at Pa, and then place the quartz ampoule in ACRT-B crystal growth equipment for growth.

[0050] The growth parameters are as follows: set the target temperature in the high temperature zone as 1200-1150°C, the low temperature zone as 1050-1000°C, and the heating time as 12 hours; after reaching the target temperature, overheat at 10-50°C above the melting point for 1-24 hours, Finally, the crucible is lowered at a rate of 1-2 mm per hour, and the supporting rod stops falling after 75 to 150 hours after starting to drop, and the temperature is cooled to room temperature.

[0051] Step 3: Take out the grown quartz ampoule, cut it with an external circular cutting machine, take out the crystal ingot, and cut the crystal ingot and wafer with a diamond wire cutting machine.

...

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Abstract

The invention relates to a high-mobility co-doped tellurium zinc cadmium (CZT) crystal used for nuclear radiation detection and a preparation method of the crystal. Two elements are used for doping tocompensate unavoidable intrinsic defects in crystal growth and reduce residual impurities, and therefore the better semi-insulating performance and excellent charge carrier transport performance arerealized at the same time. The grown co-doped CZT crystal provided by the invention has greatly-improved electron mobility in the electrical properties, the electron mobility can reach 1340 cm<2> / Vs and is improved by about 20-58% than a crystal singly doped by In reported in a literature, and the charge carrier transport performance is greatly improved; and the grown co-doped CZT has the characteristics of semi-insulating performance (high resistance), the resistivity can be up to 10<10> order of magnitudes, the electron mobility is high, and the co-doped CZT crystal fully meets the performance requirements of a nuclear radiation detector.

Description

technical field [0001] The present invention belongs to cadmium zinc telluride (Cd x Zn 1-x Te, CZT) single crystal preparation and application technical field, relates to a high mobility co-doped cadmium zinc telluride crystal for nuclear radiation detection and its preparation method. Background technique [0002] Cadmium zinc telluride (CdZnTe, CZT) crystal has excellent performance in the field of X-ray and Gamma ray detection, and has great application prospects in medical imaging, security inspection and nuclear safety. However, it is not easy to prepare a high-performance detector-level CZT single crystal, which is based on excellent electrical properties, such as having a resistivity greater than 10 at room temperature. 9 ohms cm, excellent carrier transport performance with large carrier mobility and lifetime. [0003] Document 1A.Owens, A.Peacock.Compound Semiconductor RadiationDetectors.Nucl.Instrum.Methods Phys.Res.,Sect.A discloses the performance of various ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/48C30B11/02
CPCC30B11/02C30B29/48
Inventor 王涛艾莘殷子昂杨帆查钢强介万奇
Owner NORTHWESTERN POLYTECHNICAL UNIV
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