Manufacturing method for ultraviolet LED chip

A technology of LED chips and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve problems such as strong absorption loss, adhesion problems, and damage to n-type ohmic contacts

Active Publication Date: 2018-08-28
GUANGDONG INST OF SEMICON IND TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, ultraviolet LED is in the stage of technological development, and there are still some difficult problems to break through: the band gap of GaN material is 3.39eV, and GaN material absorbs ultraviolet light with a wavelength less than 365nm, and the absorption loss becomes stronger as the wavelength decreases. Therefore, for short-wavelength ultraviolet LEDs, AlGaN materials need to be used as semiconductor materials
However, adopting to make the n-type ohmic contact layer first, and then making the p-type ohmic contact layer will also bring new problems: such as the p-type ohmic contact annealing process destroys the n-type ohmic contact, and adopts the stripping method to make the p-type ohmic contact layer ( Make the n-type ohmic contact first and then make the p-type ohmic contact. The p-type ohmic contact layer can only be made by stripping process. If the corrosion p-type ohmic contact method is used, the n-type ohmic contact metal will be corroded) Introduced adhesion problems and many more

Method used

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  • Manufacturing method for ultraviolet LED chip
  • Manufacturing method for ultraviolet LED chip
  • Manufacturing method for ultraviolet LED chip

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Experimental program
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Effect test

Embodiment 1

[0060] The present embodiment provides a method for fabricating an ultraviolet LED chip, which includes the following steps:

[0061] S1: sequentially epitaxially grow the u-GaN layer 2, the n-AlGaN layer 3, the multiple quantum well layer 4 and the p-AlGaN layer 5 on the sapphire substrate 1;

[0062] S2: remove the p-AlGaN layer 5, quantum well layer 4 and part of the n-AlGaN layer 3 in a part of the region by photolithography and dry etching, exposing the surface 6 of the n-AlGaN layer to form an n-contact hole;

[0063] S3: A growth barrier layer is grown, and the growth barrier layer on the n-contact hole is etched by photolithography to expose the surface 6 of the n-AlGaN layer;

[0064] Wherein, the growth barrier layer is selected from one or more of a silicon oxide barrier layer, a silicon nitride barrier layer and a silicon oxynitride barrier layer, and the method for growing the barrier layer is one of ALD, PECVD, LPCVD, and magnetron sputtering or more.

[0065] ...

Embodiment 2

[0081] S1: sequentially epitaxially grow the u-GaN layer 2, the n-AlGaN layer 3, the multiple quantum well layer 4 and the p-AlGaN layer 5 on the SiC substrate;

[0082] S2: Remove the p-AlGaN layer 5, quantum wells and part of the n-AlGaN in a part of the region by photolithography and dry etching, exposing the surface 6 of the n-AlGaN layer, and forming an n-contact hole;

[0083] S3: A growth barrier layer is grown, and the growth barrier layer on the n-contact hole is etched by photolithography to expose the surface 6 of the n-AlGaN layer;

[0084]Wherein, the growth barrier layer is selected from one or more of silicon oxide barrier layer, silicon nitride barrier layer and silicon oxynitride barrier layer, and the method for preparing the growth barrier layer is one of ALD, PECVD, LPCVD, and magnetron sputtering. one or more.

[0085] S4: On the surface 6 of the n-AlGaN layer, a thin layer of highly doped n-GaN7 is grown by the MOCVD method, and the growth barrier layer ...

Embodiment 3

[0103] This embodiment provides a method for fabricating an ultraviolet LED chip. The difference between this fabrication method and the fabrication method provided in Embodiment 1 is that in this embodiment:

[0104] In step S1, an AlN substrate is used as the growth substrate 1, and the u-AlGaN layer 2, the n-AlGaN layer 3, the multiple quantum well layer 4 and the p-AlGaN layer 5 are epitaxially grown on the AlN substrate in sequence;

[0105] In step S4, the MOCVD method is used to grow the n-InGaN layer 7, the n-InGaN thickness is 30 nm, the growth temperature is 950°C, and the doping concentration is 5.0×10 18 cm -3

[0106] In step S5, the annealing condition of the p-type ohmic contact metal is annealing at a temperature of 550°C for 240s;

[0107] In step S7, the annealing condition of the n-type ohmic contact metal is rapid annealing at 260°C for 120s;

[0108] In step S814, the AlN substrate is removed by a laser lift-off method, and the surface of the u-AlGaN la...

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Abstract

The invention provides a manufacturing method for an ultraviolet LED chip, and relates to the field of semiconductor light-emitting devices. The method comprises the steps: defining an n-type AlGaN ohmic contact region of an ultraviolet LED chip structure in advance, growing a barrier layer for covering other layers, and carrying out the MOCVD growing of a thin n-GaN / n-InGaN layer on the n-type AlGaN ohmic contact region serves as an n-type ohmic contact; making a near-ultraviolet LED chip of a flip-chip structure. The thickness of the thin n-GaN / n-InGaN layer is small enough, and an area occupied by the thin n-GaN / n-InGaN layer is small. The quantity of ultraviolet light absorbed by the thin n-GaN / n-InGaN layer is very small, and the impact on the luminous efficiency is small. The methodcan effectively reduce the annealing temperature of AlGaN ohmic contact, solves a technological problem caused by the high-temperature annealing, is simple, is low in cost, can precisely control an n-GaN / n-InGaN growth region, and is suitable for large-scale production.

Description

technical field [0001] The invention relates to the field of semiconductor light-emitting devices, and in particular to a method for manufacturing an ultraviolet LED chip. Background technique [0002] Compared with traditional UV light sources, UV LED light sources have the advantages of environmental friendliness, fast switching speed, narrow spectrum and long life. UV LEDs can be divided into near-ultraviolet UVA (320-400nm), UVB (280-320nm), and UVC (200-280nm) according to wavelength. With the rapid development of LED technology and the continuous improvement of the luminous efficiency and packaging technology of LED chips, the huge application value of ultraviolet LEDs has attracted great attention in recent years and has become a new hot spot for research and investment in the global semiconductor field. According to the forecast of the LED Research Institute (GGII), the global UV LED market size will exceed 1 billion US dollars by 2020, with a compound annual growth...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/36
CPCH01L33/007H01L33/0075H01L33/36H01L2933/0016
Inventor 曾昭烩刘晓燕陈志涛张康龚政刘久澄任远潘章旭李叶林
Owner GUANGDONG INST OF SEMICON IND TECH
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