Preparation method of CVD graphene planar miniature supercapacitor

A supercapacitor and graphene technology, applied in the manufacture of hybrid/electric double layer capacitors, hybrid capacitor electrodes, etc., can solve the problems of not realizing the combination of energy devices and electronic devices, affecting the performance of micro supercapacitors, and the decline in the conductivity of graphene , to achieve the effect of improving fast charge and discharge capacity, reducing volume, and reducing device impedance

Inactive Publication Date: 2018-09-07
XIDIAN UNIV
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] Chinese invention patent 201710398238.8 discloses graphene oxide slurry, micro-graphene electrode and its preparation method, and micro-graphene supercapacitor. In this patent application, a graphene oxide slurry is used as ink, and the positive and negative The poles are printed on the same plane, and after reduction, a miniature graphene supercapacitor is obtained. During the preparation process of this disclosed reduced graphene oxide material, functional groups are incorporated due to redox reactions, resulting in too many graphene defects, and in the preparation of graphene The introduction of binders into the micro-electrodes resulted in a serious drop in the conductivity of graphene, affecting the performance of micro-supercapacitors, and the patent uses screen printing technology, which did not realize the combination of energy devices and electronic devices in the true sense

Method used

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  • Preparation method of CVD graphene planar miniature supercapacitor
  • Preparation method of CVD graphene planar miniature supercapacitor
  • Preparation method of CVD graphene planar miniature supercapacitor

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Experimental program
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Embodiment 1

[0030] Embodiment 1: make the graphene planar micro-supercapacitor based on silicon dioxide substrate.

[0031] Step 1: Carry out substrate pretreatment on metal foamed copper.

[0032] 1a) Select metallic copper foam as the substrate for CVD growth of graphene, and perform a surface pretreatment process, that is, first use a tablet press to thin the foam copper, and then use deionized water in turn to analyze pure acetone and analyze pure ethanol After ultrasonic cleaning several times, dry them for later use;

[0033] 1b) Immerse the thinned copper foam substrate in 0.01M ammonium persulfate solution for 3 minutes to remove oxides on the copper surface, then rinse with deionized water several times and dry.

[0034] Step 2, CVD method prepares and transfers graphene.

[0035] 2a) Put the foamed copper into the tube furnace, evacuate to less than 1Pa, and feed H2 into the furnace with a flow rate of 10 sccm 2 , to heat up to the set temperature of 1030°C;

[0036] 2b) Aft...

Embodiment 2

[0056] Embodiment 2: make the graphene planar miniature supercapacitor based on PET substrate.

[0057] Step 1, base pretreatment is performed on the metal copper foil.

[0058] 1.1) Select metal copper foil as the substrate for CVD growth graphene, and perform surface pretreatment process on it, that is, first press it with a tablet press, and then use deionized water, analytically pure acetone, and analytically pure ethanol for ultrasonic cleaning Blow dry after several times;

[0059] 1.2) Immerse the metal copper foil in a 0.01M ammonium persulfate solution for 3 minutes to remove oxides on the surface of the metal copper, and then rinse the sample several times with deionized water and dry it.

[0060] Step 2, prepare and transfer graphene by CVD method.

[0061] 2.1) Put the pretreated copper foil into the tube furnace, evacuate to less than 1Pa, and feed H2 into the furnace with a flow rate of 50 sccm 2 , to heat up to the set temperature of 1050°C;

[0062] 2.2) Af...

Embodiment 3

[0082] Embodiment 3: making a graphene planar micro-supercapacitor based on a silicon wafer substrate.

[0083] In step A, substrate pretreatment is performed on the nickel foam.

[0084] Select foamed nickel as the substrate for CVD growth graphene, and carry out surface pretreatment process, that is, first use a tablet press to thin the foamed nickel, and then use deionized water, analytically pure acetone, and analytically pure ethanol for ultrasonic cleaning. After several times, dry it for later use; then soak the thinned nickel foam in 0.01M ammonium persulfate solution for 3 minutes to remove oxides on the copper surface, and then rinse the sample with deionized water several times and dry it.

[0085] Step B, preparing and transferring graphene by CVD method.

[0086] In the first step, put the nickel foam into the tube furnace, evacuate to below 1Pa, and feed into the furnace with a flow rate of 20 sccm of H 2 , heat up to the set temperature of 950°C; when the set ...

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Abstract

The invention discloses a preparation method of a CVD graphene planar miniature supercapacitor, for mainly solving the problem that the traditional supercapacitor is large in size, small in effectivecontact area between electrolyte and electrode and blocked in charge transmission. The implementation scheme of the preparation method comprises the steps of preprocessing catalytic metal; growing graphene on the preprocessed metal by using a CVD method, and using polymethyl methacrylate to transfer the graphene on a target substrate; designing a quasi-interdigital photoetching mask; using E-Beamequipment to deposit a metal current collector; producing a graphene microelectrode by using a photoetching technology; and dripping and coating gel electrolyte on the surface of the graphene microelectrode to produce the graphene planar miniature supercapacitor. The graphene planar miniature supercapacitor prepared by the method provided by the invention is small in size, high in integration andflexibility degree, the transportation distance of the transferring charge is shortened, the utilization area of the electrode material is improved, the blockage of the transferring charge in transportation is reduced, the frequency response is increased, and the graphene planar miniature supercapacitor can be applied to wearable equipment.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to a method for preparing a chemical vapor deposition CVD graphene planar micro-supercapacitor, which can be used in the manufacture of large-scale integrated circuits. Background technique [0002] Supercapacitor is an energy device with fast charge and discharge and long service life. Compared with traditional batteries, it has higher energy density and power density, and is widely used in various fields of equipment. The traditional supercapacitor structure is a sandwich type, which is composed of positive electrode, negative electrode, electrode liquid, diaphragm and so on. [0003] With the rapid development of miniaturized, flexible and integrated electronic devices and systems, such as biological detection, distance control systems, radio frequency detection and micro-electromechanical systems, the required energy self-supply systems must also meet miniaturizati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G11/84H01G11/86H01G11/36
CPCH01G11/36H01G11/84H01G11/86Y02E60/13
Inventor 宁静冯欣王东张进成穆美珊郝跃
Owner XIDIAN UNIV
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