A kind of preparation method of copper-zinc-tin-sulfur film

A copper-zinc-tin-sulfur and thin-film technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of component segregation and high reaction atmosphere requirements, and achieve the effects of short reaction time, improved optical properties of thin films, and high production efficiency

Active Publication Date: 2020-04-07
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method is more convenient than the former, but requires a good reaction environment, high requirements for the reaction atmosphere, and direct deposition on the substrate may cause component segregation

Method used

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  • A kind of preparation method of copper-zinc-tin-sulfur film
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  • A kind of preparation method of copper-zinc-tin-sulfur film

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Effect test

Embodiment 1

[0029] Embodiment 1: a kind of preparation method of copper-zinc-tin-sulfur film, concrete steps are as follows:

[0030] (1) According to the copper source (the copper source is copper chloride dihydrate (CuCl 2 ‧2H 2 O)), zinc source (zinc source is zinc acetate dihydrate (Zn(CH 3 COO) 2 ‧2H 2 O)), tin source (tin source is tin chloride dihydrate (SnCl 2 ‧2H 2 O)), sulfur source (sulfur source is thiourea (CS(NH 2 ) 2 )) in a molar ratio of 2:1.5:1.25:6 into an organic solvent (the organic solvent is a solution mixed with ethylene glycol and triethylenetetramine in a molar ratio of 1:10), stirred and sonicated to obtain Precursor solution;

[0031] (2) Ultrasonic cleaning and vacuum drying of silicon wafers; where ultrasonic cleaning is ultrasonic cleaning with absolute ethanol and deionized water in sequence, the temperature of vacuum drying is 60°C, and the vacuum drying time is 10h;

[0032] (3) Spin-coat the precursor solution of step (1) on the silicon wafer in...

Embodiment 2

[0041] Embodiment 2: a kind of preparation method of copper-zinc-tin-sulfur film, concrete steps are as follows:

[0042] (1) According to the molar ratio of copper source (copper source is copper nitrate), zinc source (zinc source is zinc nitrate), tin source (tin source is tin acetate), sulfur source (sulfur source is sodium sulfide) is 1:2 : 1.5:8 is added to the organic solvent (the organic solvent is a solution mixed with ethylene glycol and ethanol at a molar ratio of 2:8), and the precursor solution is obtained after stirring and ultrasonic treatment;

[0043] (2) Ultrasonic cleaning and vacuum drying of FTO conductive glass; where ultrasonic cleaning is ultrasonic cleaning with absolute ethanol and deionized water in sequence, the temperature of vacuum drying is 70°C, and the vacuum drying time is 8 hours;

[0044] (3) Spin-coat the precursor solution in step (1) on the FTO conductive glass in step (2) and dry it in vacuum for 8 h at a temperature of 80 °C. The spin-co...

Embodiment 3

[0047] Embodiment 3: a kind of preparation method of copper-zinc-tin-sulfur film, concrete steps are as follows:

[0048] (1) According to the mole of copper source (copper source is copper acetylacetonate), zinc source (zinc source is zinc sulfate), tin source (tin source is tin tetraiodide), sulfur source (sulfur source is ammonium thiocyanate) The ratio of 1.5:1:2:10 is added to the organic solvent (the organic solvent is acetic acid), and the precursor solution is obtained after stirring and ultrasonic treatment;

[0049] (2) Ultrasonic cleaning and vacuum drying of silicon wafers; where ultrasonic cleaning is ultrasonic cleaning with absolute ethanol and deionized water in sequence, the temperature of vacuum drying is 80 ° C, and the vacuum drying time is 7 hours;

[0050] (3) Spin-coat the precursor solution of step (1) on the silicon wafer in step (2) and dry it in vacuum at 90°C for 7 h, where the spin-coating rate is 3000 r / min and the spin-coating time is 20s ; Then...

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Abstract

The invention relates to a preparation method of a copper-zinc-tin-sulfide film, and belongs to the technical field of functional film materials. According to the invention, a copper source, a zinc source, a tin source and a sulfur source are added into an organic solvent, wherein the molar ratio of the copper source, the zinc source, the tin source and the sulfur source is (1-2) (1-2): (1-2): (4-10). The organic solvent is stirred and subjected to ultrasonic treatment, and then a precursor solution is obtained. The ultrasonic cleaning and drying process of an FTO conductive glass or a siliconwafer in the vacuum state is carried out. The precursor solution is coated on the FTO conductive glass or the silicon wafer through the spin-coating process. Meanwhile, the FTO conductive glass or the silicon wafer is dried in the vacuum state for 6-10 hours at the temperature of 60-90 DEG C. After that, the spin-coating process of the precursor solution is repeated for 3-6 times, and a CZTS filmprecursor is obtained after carrying out the vacuum drying operation. The annealing treatment is performed on the CZTS film precursor. Finally, the microwave optimization treatment is performed on the CZTS film precursor after being subjected to the annealing treatment, and then a CZTS film is obtained. The method is simple in process, simple in reaction device, high in reaction speed, low in cost and good in film forming quality.

Description

technical field [0001] The invention relates to a preparation method of a copper-zinc-tin-sulfur thin film, belonging to the technical field of functional thin film materials. Background technique [0002] Copper-zinc-tin-sulfur compound semiconductors are non-toxic, relatively rich in raw materials, and have high absorption coefficients (>10 4 cm -1 ) and suitable band gap (1~1.5eV), it has become one of the preferred substitutes for copper indium gallium selenide as thin film solar cells. At present, copper-zinc-tin-sulfur thin films can be prepared by vacuum methods such as evaporation method, measurement and control sputtering method, etc.; or non-vacuum methods such as spray pyrolysis method, sol-gel method, etc. The vacuum method often requires large-scale vacuum equipment, which greatly increases the production cost; the non-vacuum method has simpler equipment than the vacuum method, does not require harsh reaction conditions, and can effectively reduce costs. A...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/032
CPCH01L31/0326
Inventor 沈韬柴鲜花朱艳甘国友青红梅
Owner KUNMING UNIV OF SCI & TECH
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