Method for FTrPSA (full temperature range-pressure swing adsorption) hydrogen production recycling of high-concentration ammonia-containing tail gas from LED-MOCVD (light emitting diode-metal oxide chemical vapor deposition) processing

A pressure swing adsorption, high concentration technology, applied in separation methods, chemical instruments and methods, hydrogen separation, etc., can solve problems such as difficult recycling, achieve the effect of reducing exhaust emissions, good activity and diffusivity, and solving technical bottlenecks

Active Publication Date: 2018-10-02
SICHUAN TECHAIRS
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0006] The present invention provides a method for hydrogen production and reuse of high-concentration ammonia-containing tail gas in the LED-MOCVD process with full-temperature pressure swing adsorption to solve the problem that the MOCVD process tail gas prepared by LED in the prior art contains metal ions, arsane (AsH3) and oxygen-containing Technical problems that are difficult to recycle due to impurities such as waste

Method used

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  • Method for FTrPSA (full temperature range-pressure swing adsorption) hydrogen production recycling of high-concentration ammonia-containing tail gas from LED-MOCVD (light emitting diode-metal oxide chemical vapor deposition) processing

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Embodiment 1

[0037] Such as figure 1 As shown, a LED-MOCVD process high-concentration ammonia-containing waste gas full-temperature pressure swing adsorption hydrogen production reuse method, the raw material gas treated by normal pressure or low pressure MOCVD (metal oxide chemical vapor deposition) is prepared based on gallium nitride ( The exhaust gas in the light-emitting diode (LED) process of GaN) epitaxial wafer growth, its main composition is nitrogen (N2): 46% (v / v, the following is similar), hydrogen (H2): 34%, ammonia (NH3): 19%, the remaining 1% is a small amount of metal ions, particles, arsenic, methane (CH4), water (H2O), carbon monoxide (CO), carbon dioxide (CO2), oxygen (O2) and other impurity components, the pressure is normal Pressure, the temperature is 50 ~ 70 ℃, the specific implementation steps include,

[0038] (1) Pretreatment, the raw material gas is sent to the pretreatment unit consisting of a dust collector, a particle filter, and an oil mist collector through...

Embodiment 2

[0046] Such as figure 1 As shown, on the basis of Example 1, the raw material gas temperature is 20-30°C, and the rest remain unchanged. The high-temperature product gas generated in the hydrogen purification process is heat-exchanged with the raw material gas to restore its temperature to 50-70°C, and Carry out operation by embodiment 1. The purpose is to prevent the high concentration of ammonia in the raw gas from easily escaping into liquid at a temperature of 20°C lower than the ambient temperature and damaging the equipment in the pretreatment process.

Embodiment 3

[0048] Such as figure 1 As shown, on the basis of Example 1, the more optimal composition of the ammonia thermal cracking catalyst is cobalt (Co)-molybdenum (Mo) bimetal active component, silicon (Si)-carbon nanotube (CNTs) carrier, potassium salt As a modifier, the decomposition rate of ammonia is greater than or equal to 95-99%, the reaction bed can be in the form of a whole tube, and the reaction temperature is reduced to 400-450°C.

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Abstract

The invention discloses a method for FTrPSA (full temperature range-pressure swing adsorption) hydrogen production recycling of high-concentration ammonia-containing tail gas from LED-MOCVD (light emitting diode-metal oxide chemical vapor deposition) processing. By the process of pretreatment, ammonia thermal cracking, fine deamination, pressure swing adsorption based hydrogen extraction and hydrogen purification, high-concentration ammonia-containing waste gas from the LED-MOCVD processing is subjected to thermal cracking and purification to meet the electronic grade hydrogen standard required by the LED-MOCVD processing, the waste gas is recycled, and the hydrogen yield is higher than or equal to 80%-90%. The technical problem that recycled normal-pressure or low-pressure high-concentration ammonia-containing waste gas from the LED-MOCVD processing cannot return to the LED-MOCVD processing to be used is solved, and the blank in green and circular economy development of the LED industry is filled up.

Description

technical field [0001] The invention relates to the electronic environmental protection field of comprehensive utilization of ammonia-containing (NH3) waste gas in the manufacturing process of semiconductor light-emitting diodes (LEDs), in particular to a full-temperature-range pressure-swing adsorption hydrogen production reuse of high-concentration ammonia-containing tail gas in the LED-MOCVD process method. Background technique [0002] MOCVD (Metal Oxide Chemical Vapor Deposition) process (equipment) is a modern method and means for the research and production of compound semiconductor materials, especially as a method and equipment for the industrial production of new light-emitting materials-light-emitting diodes (LEDs). Its high quality , high stability, high repeatability and large scale are irreplaceable by other semiconductor material growth methods and equipment. It is the main method and means of producing optoelectronic devices and microwave device materials in ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B3/56C01B3/58B01D53/86B01D53/58B01D53/047
CPCB01D53/047B01D53/8634C01B3/56C01B3/58Y02A50/20
Inventor 钟雨明陈运刘开莉蔡跃明
Owner SICHUAN TECHAIRS
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