Method for FTrPSA (full temperature range-pressure swing adsorption) hydrogen production recycling of high-concentration ammonia-containing tail gas from LED-MOCVD (light emitting diode-metal oxide chemical vapor deposition) processing
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SICHUAN TECHAIRS
- Publication Date
- 2018-10-02
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Abstract
Description
technical field
[0001] The invention relates to the electronic environmental protection field of comprehensive utilization of ammonia-containing (NH3) waste gas in the manufacturing process of semiconductor light-emitting diodes (LEDs), in particular to a full-temperature-range pressure-swing adsorption hydrogen production reuse of high-concentration ammonia-containing tail gas in the LED-MOCVD process method. Background technique
[0002] MOCVD (Metal Oxide Chemical Vapor Deposition) process (equipment) is a modern method and means for the research and production of compound semiconductor materials, especially as a method and equipment for the industrial production of new light-emitting materials-light-emitting diodes (LEDs). Its high quality , high stability, high repeatability and large scale are irreplaceable by other semiconductor material growth methods and equipment. It is the main method and means of producing optoelectronic devices and microwave device materials in ...