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A method for preparing tin-indium nanowires by direct current electrodeposition

A technology of nanowires and direct current, applied in the field of preparation of tin-indium nanowires by direct current electrodeposition, which can solve the problem that it is difficult to precisely control the shape of tin or indium nanorods, achieve high process repeatability, realize industrialization, and reduce environmental pollution small effect

Active Publication Date: 2021-01-19
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is difficult to precisely control the shape of tin or indium nanorods prepared by chemical methods. How to obtain tin-indium nanowires with uniform and controllable size has become the focus of nanoscale welding.

Method used

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  • A method for preparing tin-indium nanowires by direct current electrodeposition
  • A method for preparing tin-indium nanowires by direct current electrodeposition
  • A method for preparing tin-indium nanowires by direct current electrodeposition

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preparation example Construction

[0033] 1. Preparation of the silver seed layer: prepare the silver seed layer by magnetron sputtering on one side (bottom surface) of the double-pass anodized aluminum template, fix the template on the silicon wafer, and sputter the silver target with a purity of 99.99% , the sputtering rate is 40-80KW power, sputtering 10-30min, the thickness of the prepared silver seed layer is about 300-1000nm.

[0034] 2. In the DC electrodeposition process, when growing tin nanowires, a methanesulfonic acid system plating solution is used, and the preparation process of the methanesulfonic acid system plating solution includes the following steps (a)-(d):

[0035] (a) Take 1-10g of gelatin and add it to a beaker filled with 100-200mL of deionized water, cover it with plastic wrap, put it on a magnetic stirrer, and stir it at 60-70°C until the gelatin is completely dissolved into a light yellow liquid , to obtain a gelatin solution;

[0036] (b) Take 50-100ml of deionized water and add it...

Embodiment 1

[0048] figure 1 It is a schematic diagram of the filling process of anodized aluminum template to grow tin-indium nanowires by electrodeposition. The process steps are:

[0049] (1) Using nanoporous polycarbonate film or anodized aluminum oxide film (AAO) as a template, a silver seed layer was prepared by magnetron sputtering on one side of the double-pass anodized aluminum template, and the magnetron sputtering time was 15 minutes. The prepared template was observed under a scanning electron microscope, and the thickness of the sputtered silver seed layer was about 850 nm. The magnetron sputtered template is stored in vacuum to reduce the oxidation of the silver film in the air.

[0050] (2) Preparation of methanesulfonic acid system plating solution: weigh 3g of gelatin with a tray balance and add 120ml of deionized water, cover with plastic wrap and place in a magnetic stirrer, keep the temperature at 60-70°C until the gelatin is completely dissolved into a pale Prepare ...

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Abstract

The invention discloses a method for preparing tin-indium nanowires by direct current electrodeposition, and belongs to the field of electronic materials. The method comprises the steps that firstly,a nanoporous polycarbonate film or an anodized aluminum oxide film (AAO) is used as a template, a silver seed layer is sputtered on the bottom of the template by magnetron sputtering, and with copperas a bottom plate at the bottom end of a through hole, tin nanowires and indium nanowires fill the through hole in sequence from the bottom end of the seed layer by direct current electroplating. Thedirect current electrodeposition filling method proposed by the invention can obtain the tin-indium nanowires with stable structural properties, high electricity conductivity and thermal conductivity,high plasticity and other characteristics. As the main component of traditional solder, tin-indium in the nano form has the same low cost, low melting point, good welding ability and mechanical properties, and excellent wettability with a metal matrix, is suitable for effective connection and interconnection of self-assembly nanostructures, achieves effective nano-scale interconnections of structures with thermal and electrical functions, and provides new directions and ideas for nano-scale solder interface reaction research.

Description

technical field [0001] The invention relates to the technical field of microelectronic assembly and packaging and interconnection of electronic components, in particular to a method for preparing tin-indium nanowires by DC electrodeposition. Background technique [0002] The synthesis and characterization of nanomaterials have made great progress in the past two decades, and special nanostructures such as nanowires, nanorods, nanotubes, and nanocomposites have been well known. These materials have been successfully synthesized and characterized by self-assembly and directed assembly. However, wider application of nanomaterials in industrial manufacturing is far from mature. A major obstacle to large-scale fabrication is the formation of interconnections between nanomaterials. Especially for applications in nanoelectronics, nanoelectromechanical systems (NEMS) and nanophotonics, forming robust interconnections with good mechanical, thermal and electrical properties is one o...

Claims

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Application Information

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IPC IPC(8): C23C14/18C23C14/35C23C28/02C25D3/32C25D3/54C25D5/54C25D7/00
CPCC23C14/185C23C14/35C23C28/023C25D3/32C25D3/54C25D5/54C25D7/00
Inventor 刘志权孟智超曹丽华
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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