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Full titanium nitride current collector/electrode supercapacitor and preparation method thereof

A technology of supercapacitors and current collectors, applied in the manufacture of hybrid/electric double layer capacitors, hybrid capacitor electrodes, hybrid capacitor current collectors, etc., can solve the problems of frequency response (poor rate characteristics, etc., and achieve strong process applicability and simple process. Ease of use and a wide variety of effects to choose from

Active Publication Date: 2019-04-19
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In recent years, French scholars have reported that TiN and VN films with high resistivity (ρ>1000μΩ.cm) porous structure have high specific capacitance values ​​comparable to carbon-based, graphene-based, and transition metal oxide electrode materials, but in In the prepared supercapacitor, the above-mentioned film is used as both an electrode material and a current collector at the same time. Due to the high resistivity of the film, it also leads to the problem of poor frequency response (magnification) characteristics.

Method used

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  • Full titanium nitride current collector/electrode supercapacitor and preparation method thereof
  • Full titanium nitride current collector/electrode supercapacitor and preparation method thereof
  • Full titanium nitride current collector/electrode supercapacitor and preparation method thereof

Examples

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Embodiment example 1

[0031] In this embodiment, a single crystal silicon substrate is selected as the substrate, and the semiconductor industry standard RCA cleaning process is used for cleaning. DC reactive magnetron sputtering is adopted, the target material is titanium metal, the base distance of the target is 20cm, Ar:N 2=10:1sccm, sputtering power: 100W, substrate temperature: 400°C, working pressure: 0.2Pa, substrate bias: -50V, sputtering time: 15min, first deposit a layer with a thickness of 85nm, and a resistivity of 110μΩ·cm , the surface is smooth and dense TiN thin film is used as the current collector material, and then the distance between the target and the base is 20cm, Ar:N 2 =10:1sccm, sputtering power: 100W, substrate temperature: 400°C, working pressure: 0.4Pa, sputtering time: grow a layer of thickness 240nm under the conditions of 30min, resistivity 2500μΩ·cm, loose and porous TiN film as electrode material. Using a three-electrode test system, the working electrode is TiN,...

Embodiment example 2

[0033] In this embodiment, a single crystal silicon substrate is selected as the substrate, and the semiconductor industry standard RCA cleaning process is used for cleaning. Using DC reactive magnetron sputtering, the target material is titanium metal, the base distance of the target is 50cm, Ar:N 2 =20:1sccm, sputtering power: 200W, substrate temperature: 200°C, working pressure: 0.2Pa, substrate bias: -50V, sputtering time: 15min, deposit a layer with a thickness of 55nm first, and a resistivity of 120μΩ·cm , a smooth and dense TiN thin film is used as the current collector material. Then at a base distance of 20cm, Ar:N 2 =10:1sccm, sputtering power: 100W, substrate temperature: 400°C, working pressure: 0.4Pa, sputtering time: grow a layer of thickness of 280nm under the conditions of 30min, resistivity of 2500μΩ·cm, loose and porous TiN film as electrode material. Using a three-electrode test system, the working electrode is TiN, the counter electrode is platinum elect...

Embodiment example 3

[0035] In this embodiment, a single crystal silicon substrate is selected as the substrate, and the semiconductor industry standard RCA cleaning process is used for cleaning. Using radio frequency reactive magnetron sputtering, the target material is titanium metal, the target base distance is 60cm, Ar:N 2 =20:1sccm, sputtering power: 150W, substrate temperature: 150℃, working pressure: 0.8Pa, substrate bias voltage: -200V, sputtering time: 10min, first deposit a layer with a thickness of 25nm, and a resistivity of 100μΩ·cm , the surface is smooth and dense TiN thin film is used as the current collector material, and then the distance between the target and the base is 60cm, Ar:N 2 =20:1sccm, sputtering power: 200W, substrate temperature: 200°C, working pressure: 0.8Pa, sputtering time: grow a layer with a thickness of 330nm and resistivity of 4100μΩ·cm under the conditions of 30min, loose and porous TiN film as electrode material. Using a three-electrode test system, the wo...

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Abstract

The invention provides a full titanium nitride current collector / electrode supercapacitor and a preparation method thereof, which belong to the technical field of new energy materials and devices. Thepreparation method comprises the steps of: firstly, cleaning and removing impurities on the surface of a substrate; then depositing a TiN thin film with high density and high conductivity on the surface of the substrate as an electron transport current collector material, changing thin film surface atomic diffusion, nucleation growth and the like mechanisms through regulating and controlling deposition process parameters, and directly continuing the growth of a layer of a porous and low-conductivity TiN thin film as an electrode material on the current collector. The current collector and theelectrode undergo TiN continuous growth, the performance of the materials is cut through simply changing the deposition process parameters of the thin film, the preparation method has the advantagesof simple and feasible process, low cost, variety selections of thin film deposition technologies and high process applicability, solves the problems of delamination cracking and large contact resistance caused by poor adhesion between dissimilar current collectors and the electrode materials, lattice mismatch and difference in thermal expansion coefficients, and can greatly improve the power density, thermal stability and long-term service reliability of the supercapacitor.

Description

technical field [0001] The invention belongs to the technical field of new energy materials and devices, and relates to an all-titanium nitride current collector / electrode supercapacitor and a preparation method thereof. Background technique [0002] Due to the outstanding advantages of high energy and power density, fast charge and discharge speed, long cycle life, wide operating temperature, maintenance-free, environmental protection and pollution-free, supercapacitors have great applications in energy storage devices for microelectronic products prospect. Supercapacitors can be divided into two categories according to different energy storage mechanisms. One is the electric double layer capacitor, which stores electric energy by the electric double layer structure formed on the interface between the electrolyte and the electrode; the other is the pseudocapacitive capacitor. Oxidation-reduction reactions with electrodes generate charge transfer and store energy. Supercap...

Claims

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Application Information

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IPC IPC(8): H01G11/28H01G11/30H01G11/68H01G11/84H01G11/86
CPCH01G11/28H01G11/30H01G11/68H01G11/84H01G11/86Y02E60/13
Inventor 周大雨孙纳纳杨旭马晓倩
Owner DALIAN UNIV OF TECH
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