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Application of iodine doped graphene

A graphene and iodine doping technology, which is applied in the application field of element-doped graphene, can solve the problems of complex and expensive bisphenol A detection, and achieve the effects of stability, reusability, increased active area, and high sensitivity

Inactive Publication Date: 2019-06-28
DONGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a preparation method of iodine-doped graphene, to overcome the defects that iodine-doped graphene materials in the prior art require high temperature and complicated treatment process and the detection of bisphenol A is complicated and expensive

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Preparation of graphene oxide:

[0029] Mix 0.5g of graphite powder with concentrated nitric acid (1.5mL) and concentrated sulfuric acid (15mL) in an ice-water bath, add 2g of potassium permanganate while stirring, then raise the temperature to 45°C for 1h. After adding 10 mL of deionized water to the reaction liquid for dilution, the temperature was raised to 90° C. for 1 h, cooled to room temperature, 5 mL of hydrogen peroxide was added, and the mixture was allowed to stand for stratification. After centrifugal separation, the obtained precipitate was washed three times with deionized water and three times with acetone, and then dried at 40° C. for 24 hours to obtain graphene oxide.

Embodiment 2

[0031] Preparation of iodine-doped graphene:

[0032] 60 mg of graphene oxide prepared in Example 1 was uniformly dispersed in 30 mL of deionized water by ultrasound, transferred to a 100 mL round bottom flask, added 3 mL of hydroiodic acid (55%), and heated in an oil bath at 85° C. for 24 h under nitrogen protection . The reaction solution was cooled to room temperature and then centrifuged. The resulting solid was washed three times with distilled water and three times with acetone, and dried in an oven at 40°C for 24 hours to obtain iodine-doped graphene. Passed TEM test ( figure 2 ) clearly observed the typical wrinkled structure of graphene materials, and I 3d peaks were clearly detected at 635 and 619eV in the XPS spectrum, which can be assigned to I 3d 3 / 2 and I 3d 5 / 2 peak( image 3 ), the iodine content is 0.3%. These results indicate that iodine-doped graphene has been successfully prepared.

Embodiment 3

[0034] Bisphenol A electrochemical sensing applications:

[0035] Weigh 2 mg of the iodine-doped graphene material prepared in Example 2 and ultrasonically disperse it uniformly in 1 mL of absolute ethanol, transfer 10 μL of the dispersion with a pipette gun and deposit it on the surface of the glassy carbon electrode, and dry it with an infrared lamp, that is get the working electrode. Using a saturated calomel electrode as a reference electrode, a platinum wire as an auxiliary electrode, and a phosphate buffer solution (10 μM) (pH=7.4) as a measurement medium, differential pulse voltammetry was used to measure the two Phenol A standard solution (10μM) was electrochemically scanned, and it can be seen that the iodine-doped graphene material has a significantly enhanced current intensity compared with the bare glassy carbon electrode (GC) ( figure 1 ), showing that the iodine-doped graphene material prepared by the present invention can improve the sensitivity of detection. ...

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Abstract

The invention relates to application of iodine doped graphene. An electrochemical sensing system based on iodine doped graphene material construction and for detecting bisphenol has the characteristics of high sensitivity, high stability and reusability.

Description

technical field [0001] The invention belongs to the application field of element-doped graphene, in particular to an application of iodine-doped graphene. Background technique [0002] The good conductivity of graphene makes it a widely used electrode material in electrochemical sensors. In recent years, studies have found that heteroatom-doped graphene materials exhibit superior performance, and graphene materials doped with elements such as nitrogen, sulfur, phosphorus, and boron have been prepared and widely used in the creation of energy-related devices. The reported preparation methods of iodine-doped graphene materials generally require high temperature and complicated processing, so it is of great application value to develop a simple and macro-preparation method for iodine-doped graphene. [0003] Bisphenol A is an important chemical raw material for the production of polycarbonate and epoxy resin, etc. It is widely used in daily life plastic products such as food p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/30G01N27/32C01B32/198C01B32/184
Inventor 张煊王凯平邢文倩
Owner DONGHUA UNIV
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