Application of iodine doped graphene
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- DONGHUA UNIV
- Publication Date
- 2019-06-28
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention belongs to the application field of element-doped graphene, in particular to an application of iodine-doped graphene. Background technique
[0002] The good conductivity of graphene makes it a widely used electrode material in electrochemical sensors. In recent years, studies have found that heteroatom-doped graphene materials exhibit superior performance, and graphene materials doped with elements such as nitrogen, sulfur, phosphorus, and boron have been prepared and widely used in the creation of energy-related devices. The reported preparation methods of iodine-doped graphene materials generally require high temperature and complicated processing, so it is of great application value to develop a simple and macro-preparation method for iodine-doped graphene.
[0003] Bisphenol A is an important chemical raw material for the production of polycarbonate and epoxy resin, etc. It is widely used in daily life plastic products such as food p...