Preparation process for preparing Cr coating on surface of zirconium alloy substrate for nuclear application
A technology of substrate surface and preparation process, which is applied in metal material coating process, coating, ion implantation plating, etc., can solve the problems of low use efficiency and achieve the effects of safe use, excellent performance and excellent binding force
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Embodiment 1
[0027] Such as Figure 1~4 Shown, a kind of preparation technology that the present invention prepares Cr coating on nuclear zirconium alloy substrate surface comprises the following steps:
[0028] (1) Polish the zirconium alloy square piece with 240#, 600#, 1000#, 1500#, 3000# water-grinding sandpaper from coarse to fine, and finally use polishing paste to polish on a metallographic polishing machine. After polishing, use Use acetone and alcohol ultrasonic cleaning for 15-20 minutes;
[0029] (2) Place the zirconium alloy sheet after the above treatment in the vacuum furnace chamber of the ultra-high vacuum magnetron sputtering equipment, and wait until the vacuum degree reaches the background vacuum of 2 × 10 -4 After Pa, pass the gas and clean it with bias backsplash for 10 minutes. The backsplash bias voltage is -700V, the working atmosphere is Ar, and the working vacuum is 2Pa;
[0030] (3) After the back-sputter cleaning of the substrate surface is completed, the Cr t...
Embodiment 2
[0034] (1) Substrate surface polishing and cleaning: use 800-5000 mesh water sandpaper and polishing flannelette to perform surface grinding and polishing on the substrate sample in sequence until the mirror surface roughness Ra is less than 10nm; Powder aqueous solution, saturated Na2CO3 aqueous solution, acetone, absolute ethanol, and deionized water were ultrasonically cleaned for 15 minutes, and the substrate sample was blown dry with N2 gas after completion;
[0035](2) Place the cleaned substrate sample in a vacuum chamber for plasma bias backsplash cleaning. The process parameters are: background vacuum 5×10 -4 Pa, backsplash bias voltage is 200V, backsplash air pressure is 1.0Pa, backsplash time is 20min;
[0036] (3) Using an ultra-high vacuum multi-target magnetron sputtering coating machine to deposit a nanometer gradient coating on the surface of the substrate, the background vacuum of the coating machine is 5 × 10 -4 Pa, deposition temperature 200°C, specifically...
Embodiment 3
[0038] (1) Substrate surface polishing and cleaning: use 800-5000 mesh water sandpaper and polishing flannelette to perform surface grinding and polishing on the substrate sample in sequence until the mirror surface roughness Ra is less than 10nm; Powder aqueous solution, saturated Na2CO3 aqueous solution, acetone, absolute ethanol, and deionized water were ultrasonically cleaned for 15 minutes, and the substrate sample was blown dry with N2 gas after completion;
[0039] (2) Place the cleaned substrate sample in a vacuum chamber for plasma bias backsplash cleaning. The process parameters are: background vacuum 5×10 -4 Pa, backsplash bias voltage is 200V, backsplash air pressure is 1.0Pa, backsplash time is 20min;
[0040] (3) Using an ultra-high vacuum multi-target magnetron sputtering coating machine to deposit a nanometer gradient coating on the surface of the substrate, the background vacuum of the coating machine is 5 × 10 -4 Pa, the deposition temperature is 200°C, afte...
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