Unlock instant, AI-driven research and patent intelligence for your innovation.

Tungsten oxide and titanium oxide composite film of tin oxide photonic crystal loaded mesoporous core-shell structure and preparation method and application of tungsten oxide and titanium oxide composite film

A technology of photonic crystals and composite thin films, which is applied in photovoltaic power generation, semiconductor devices, and final product manufacturing, can solve problems such as reducing the band gap, photogenerated electron-hole instability, and low utilization of sunlight, and achieves equipment And the preparation process is simple, the cost is low, and the effect of improving life

Inactive Publication Date: 2019-08-23
GUANGDONG UNIV OF TECH
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Photocatalysis is excited under the irradiation of high-energy ultraviolet light, but because tin dioxide has a wide energy level, only small wavelengths of ultraviolet light can excite its photocatalysis, making it more effective for the sun. light utilization is low
In addition, because the photogenerated electron-hole pairs that play a key role in the photocatalytic process are unstable and easy to recombine, this also limits the photocatalytic effect of tin dioxide.
Therefore, in order to better play the role of tin dioxide in the field of photocatalysis, two problems must be solved: (1) reduce the band gap; (2) reduce the recombination rate of photogenerated electron-hole pairs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Tungsten oxide and titanium oxide composite film of tin oxide photonic crystal loaded mesoporous core-shell structure and preparation method and application of tungsten oxide and titanium oxide composite film
  • Tungsten oxide and titanium oxide composite film of tin oxide photonic crystal loaded mesoporous core-shell structure and preparation method and application of tungsten oxide and titanium oxide composite film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] 1. Cleaning of the FTO conductive glass substrate: soak the FTO conductive glass in a piranha solution (concentrated sulfuric acid and 30% hydrogen peroxide), then rinse it with deionized water until neutral to obtain a clean FTO glass;

[0032] 2. Soak the clean conductive surface of FTO glass in a polystyrene solution at a constant temperature of 60°C for 20h, then soak it in a 0.5mol / L tin chloride solution, and anneal at 450°C for 2h to obtain a tin oxide photonic crystal;

[0033] 3. Use 40ml of methanol as the solvent, 0.1g of tungsten chloride as the tungsten source, and 0.75ml of isopropyl titanate as the titanium source to prepare the reaction precursor;

[0034] 4. Then put the tin oxide photonic crystal into the inner tank of the autoclave, pour the configured precursor solution into the inner tank of the autoclave, seal it and put it in the blast drying oven, and react at a constant temperature of 100°C for 6 hours. After the solvothermal reaction , and then...

Embodiment 2

[0037] 1. Cleaning of FTO conductive glass substrate: Soak the FTO conductive glass in piranha solution, and then rinse it with deionized water until neutral to obtain a clean FTO glass;

[0038] 2. Soak the clean conductive surface of FTO glass in a polystyrene solution at a constant temperature of 60°C for 20 hours, then soak it in a 0.7mol / L tin chloride solution, and anneal at 450°C for 2 hours to obtain a tin oxide photonic crystal;

[0039] 3. Use 30ml of methanol as the solvent, 0.1g of tungsten chloride as the tungsten source, and 0.5ml of isopropyl titanate as the titanium source to prepare the reaction precursor;

[0040] 4. Then put the tin oxide photonic crystal into the inner tank of the autoclave, pour the prepared precursor solution into the inner tank of the autoclave, seal it and put it in a blast drying oven, and react at a constant temperature of 100°C for 6 hours. After the solvothermal reaction, it was put into a muffle furnace for annealing at 475°C for 2...

Embodiment 3

[0042] 1. Cleaning of FTO conductive glass substrate: Soak the FTO conductive glass in piranha solution, and then rinse it with deionized water until neutral to obtain a clean FTO glass;

[0043] 2. Soak the clean conductive surface of FTO glass in polystyrene solution at 55°C for 30h, then soak in 0.8mol / L tin chloride solution, and anneal at 450°C for 2h to obtain tin oxide photonic crystals;

[0044]3. Use 30ml of methanol as the solvent, 0.1g of tungsten chloride as the tungsten source, and 1ml of isopropyl titanate as the titanium source to configure the reaction precursor;

[0045] 4. Then put the tin oxide photonic crystal into the inner tank of the autoclave, pour the prepared precursor solution into the inner tank of the autoclave, seal it and put it in a blast drying oven, and react at a constant temperature of 100°C for 6 hours. After the solvothermal reaction, it was put into a muffle furnace for annealing at 475° C. for 2 hours to prepare a composite film of tungs...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Concentrationaaaaaaaaaa
Concentrationaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the technical field of semiconductor films, and discloses a tungsten oxide and titanium oxide composite film of a tin oxide photonic crystal loaded mesoporous core-shell structure and a preparation method and application of the tungsten oxide and titanium oxide composite film. The preparation method of the composite film comprises the following steps: adding tungsten chloride and titanium isopropyl ester into a solvent to prepare a reaction precursor solution, adding tin oxide photonic crystals into the reaction precursor solution, performing sealing in a high-pressurereaction kettle, performing reacting at the constant temperature of 80-120 DEG C, and then performing annealing at the temperature of 450-500 DEG C. According to the method, the solvothermal synthesis is adopted, tungsten oxide and titanium oxide particles of a mesoporous core-shell structure are doped on a tin oxide photonic crystal, and the semiconductor film is manufactured. The film can be used as an anode of a solar cell to be applied to the field of solar cells.

Description

technical field [0001] The invention belongs to the technical field of semiconductor thin films, and more specifically relates to a tungsten oxide and titanium oxide composite thin film with a mesoporous core-shell structure supported by tin oxide photonic crystals, a preparation method and application thereof. Background technique [0002] In recent years, environmental pollution has become an important problem that people urgently need to solve. Due to the unique performance of semiconductor materials, it has injected new vitality into the catalytic degradation of pollutants. Especially in the face of the severe challenge of water pollution treatment, semiconductor catalysts can absorb and utilize sunlight, a green energy source, to catalyze and degrade organic matter in wastewater. They have high photocatalytic efficiency and good safety, and can degrade almost all organic pollutants. The development of photocatalytic materials with large specific surface area, high phot...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/0392H01L31/04H01L31/18
CPCH01L31/0392H01L31/04H01L31/18Y02E10/50Y02P70/50
Inventor 肖也陈梦诗
Owner GUANGDONG UNIV OF TECH