Slurry for photocuring 3D printing and preparation method thereof, and silicon nitride ceramic
A silicon nitride ceramic, 3D printing technology, applied in the direction of additive processing, can solve the problems of harsh preparation conditions, low curing thickness, affecting molding accuracy, etc., to improve electrodynamic and colloidal properties, reduce scattering phenomenon, mechanical Excellent performance
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0027] In order to solve the above problems, according to an embodiment of the present invention, a method for preparing a photocurable 3D printing slurry is provided, wherein the method includes the following steps:
[0028] Step 1, silicon nitride powder pretreatment, including:
[0029] Disperse the silicon nitride powder in an appropriate amount of alkaline solution to obtain an alkaline suspension;
[0030] Add appropriate amount of Y to the alkaline suspension 3+ and Mg 2+ The mixed salt solution, after the reaction is completed, the silicon nitride powder containing the coating is obtained;
[0031] Post-treating the silicon nitride powder containing the coating, and then calcining at a temperature of 600° C. or less to obtain a pretreated silicon nitride powder;
[0032] Step 2, slurry preparation, including:
[0033] The pretreated silicon nitride powder is mixed with a resin monomer, a dispersant and a photoinitiator to obtain a silicon nitride ceramic slurry.
...
Embodiment 1
[0056] Step 1: Pretreatment of silicon nitride powder. First, ultrasonically disperse the silicon nitride powder in an aqueous solution of TEAOH to obtain a suspension (pH=9.8). Under magnetic stirring, add dropwise to the suspension at a molar ratio of 2.7: 1.1 Y(NO 3 ) 3 with Mg(NO 3 ) 2 mixed salt solution and ammonia water (20-25wt%), after the reaction is completed (the pH of the solution remains unchanged during this process), the coating is washed twice with deionized water and alcohol respectively, dried at 80°C for 24h, and passed A 60-mesh sieve can be calcined for 1 hour at 600° C. under a nitrogen atmosphere, wherein the coating is 6 wt % of the mass of the silicon nitride powder.
[0057] Step 2: Slurry preparation, the silicon nitride powder pretreated in step 1, 1,6-hexanediol diacrylate, sodium polyacrylate and (2,4,6-trimethylbenzoyl)diphenyl The mass ratio of phosphine oxide is 470:100:2.4:0.8, mixed with ball mill and vacuum pumped for 0.5h to obtain sil...
Embodiment 2
[0059] Step 1: Pretreatment of silicon nitride powder. First, ultrasonically disperse the silicon nitride powder in an aqueous solution of TEAOH to obtain a suspension (pH=9.8). Under magnetic stirring, add dropwise to the suspension at a molar ratio of 2.7: 1.1 Y(NO 3 ) 3 with Mg(NO 3 ) 2 mixed salt solution and ammonia water (20-25wt%), after the reaction is completed (the pH of the solution remains unchanged during this process), the coating is washed three times with deionized water and alcohol respectively, dried at 80°C for 24h, and then 60-mesh sieve, calcined at 600° C. for 1.5 h in a nitrogen atmosphere, wherein the coating is 8 wt % of the mass of the silicon nitride powder.
[0060] Step 2: slurry preparation, the silicon nitride powder pretreated in step 1, 1,6-hexanediol diacrylate and propoxylated neopentyl glycol diacrylate resin with a mass ratio of 2:1 Body, sodium polyacrylate and (2,4,6-trimethylbenzoyl) diphenylphosphine oxide in a mass ratio of 460:100...
PUM
Property | Measurement | Unit |
---|---|---|
diameter | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com