Terahertz wave radiation source based on graphene material

A technology of graphene and hertzian waves, applied in the field of terahertz waves, can solve the problems of complex components of terahertz waves, low conversion efficiency, and high preparation precision, and achieve the effects of simple composition, improved conversion efficiency, and high conversion efficiency

Pending Publication Date: 2019-12-17
滨州市腾源电子科技有限公司
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Problems solved by technology

Aiming at the problems existing in the existing terahertz sources above, the present invention proposes a brand-new terahertz wave source for the first time, directly using graphene or graphene composite material as the material and main components of the terahertz wave source with

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  • Terahertz wave radiation source based on graphene material
  • Terahertz wave radiation source based on graphene material

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Example Embodiment

[0023] Example 1

[0024] First, a chemical vapor deposition method is used to construct a graphene semiconductor base layer, and then the Fermi level of graphene is adjusted by chemical nitrogen doping to realize graphene semiconductor characteristics, and then transferred to a polyester PET film to form a conductive network layer with a certain structure. The graphene is mainly composed of single-layer graphene and a small amount of multi-layer graphene to form the semiconductor base layer A.

[0025] The preferred metal compound of the transmission interaction layer is TiO 2 The nano-oxide layer and the bonding resin are high-density polyethylene materials. The material ratio and basic parameters of the transmission interactive layer are as follows: transition metal compound powder 15 wt%, binding resin 45 wt%, dispersion coupling agent 2 wt%, conductive agent 38 wt%, transmission layer thickness 0.4 mm, marked as Layer B.

[0026] The graphene magnetic field emission layer in t...

Example Embodiment

[0028] Example 2

[0029] The graphene semiconductor base layer is structured by electrodeposition, and nitrogen is doped by adding melamine during the electrodeposition process, directly transferred to epoxy resin sheet and processed to form a structured conductive network layer. The single layer rate of active graphene in the electrodeposition solution reaches 90%, and the others are multilayer graphene, which constitutes the semiconductor base layer A.

[0030] The preferred metal compound of the transmission interaction layer is TiO 2 The nano-oxide layer and the bonding resin are high-density polyethylene materials. The material ratio and basic parameters of the transmission interaction layer are as follows: transition metal compound powder 20 wt%, binding resin 40 wt%, dispersion coupling agent 2 wt%, conductive agent 0.5 wt%, transmission layer thickness 0.4 mm, marked as Layer B.

[0031] The graphene magnetic field emission layer in the terahertz wave source has a single l...

Example Embodiment

[0033] Example 3

[0034] The graphene paste is printed on the ceramic substrate by screen printing, and the graphene is modified by introducing metal nano-elements through electroplating, and then processed to form a structured conductive network layer. The single-layer rate in the graphene slurry reaches 99%, and the others are multilayer graphene, which forms the semiconductor base layer A.

[0035] The preferred metal compound for the transmission interaction layer is CaCO 3 The nano oxide layer and the bonding resin are low temperature resistant materials. The material ratio and basic parameters of the transmission interactive layer are as follows: transition metal compound powder 20 wt%, binding resin 40 wt%, dispersion coupling agent 2 wt%, conductive agent 0.5 wt%, transmission layer thickness 0.4 mm, marking For the B layer.

[0036] The graphene magnetic field emission layer in the terahertz wave source has a single layer rate of 80%. The graphene surface is modified with...

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Abstract

The invention discloses a terahertz wave radiation source based on a graphene material, relates to a terahertz emission source, and belongs to the technical field of terahertz waves. The basic main body material is graphene and a modified graphene material thereof. The main structure mainly comprises three parts, namely, a semiconductor base layer constructed by graphene and the modified graphenematerial thereof, a transition transmission interaction layer formed by a transition metal compound, and a graphene magnetic field emission layer formed by graphene and a composite material thereof. The invention provides a real terahertz wave source, the output frequency completely covers the terahertz wave range of 0.1-10THz, and terahertz waves with the average power of milliwatts can be emitted even under the 24V direct-current voltage. The radiation source is simple in structure, light, high in thin film degree, wide in working range, high in conversion efficiency far superior to that ofthe existing terahertz wave radiation source and completely suitable for large-scale production and application, and has far-reaching influence on expanding the cognitive dimension and depth in the fields of spectroscopy, material science, biology, medical imaging, environmental science, information science, astrophysics, plasma physics and the like.

Description

technical field [0001] The invention belongs to the field of terahertz wave technology, in particular to a novel terahertz radiation source based on graphene and its graphene composite material. Background technique [0002] Terahertz wave (THz), also known as T-ray (T-rays), is an electromagnetic radiation between millimeter wave and infrared, with a frequency in the range of 0.1THz to 10THz (wavelength 30μm to 3mm). The most cutting-edge field technology in electromagnetic spectrum research is also an almost undeveloped band. In recent years, with the advancement of science and technology and the deepening of research, it has been found that due to the special position of the spectrum of terahertz waves, the optical properties of its spectrum, such as emission, reflection and transmission, contain rich physical and chemical information, which can be used as Fourier It is a complementary tool to transform infrared spectroscopy and X-ray technology, especially for the devel...

Claims

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Application Information

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IPC IPC(8): H01S1/02
CPCH01S1/02
Inventor 杨法杰解雪松
Owner 滨州市腾源电子科技有限公司
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