Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Terahertz wave radiation source based on graphene material

A technology of graphene and hertzian waves, applied in the field of terahertz waves, can solve the problems of complex components of terahertz waves, low conversion efficiency, and high preparation precision, and achieve the effects of simple composition, improved conversion efficiency, and high conversion efficiency

Pending Publication Date: 2019-12-17
滨州市腾源电子科技有限公司
View PDF10 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In view of the problems existing in the above existing terahertz sources, the present invention proposes a brand-new terahertz wave source for the first time, directly using graphene or graphene composite materials as the material and main components of the terahertz wave source with an output frequency range of 0.1-10THz, solving the existing problems There are technical problems and application bottlenecks such as complex components of terahertz waves, high manufacturing costs, high manufacturing precision, low conversion efficiency, and poor adjustability.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Terahertz wave radiation source based on graphene material
  • Terahertz wave radiation source based on graphene material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] First, chemical vapor deposition is used to construct the graphene semiconductor base layer, and then the Fermi energy level of graphene is adjusted by chemical nitrogen doping to realize the graphene semiconductor characteristics, and then transferred to polyester PET film to form a conductive network layer with a certain structure. Its graphene is mainly composed of single-layer graphene and a small amount of multi-layer graphene, forming the semiconductor base layer A.

[0025] The preferred metal compound for the transmission and interaction layer is TiO 2 Nano oxide layer, bonding resin is high density polyethylene material. The material ratio and basic parameters of the transmission interactive layer are as follows: transition metal compound powder 15 wt%, binder resin 45 wt%, dispersed coupling agent 2 wt%, conductive agent 38 wt%, the thickness of the transmission layer is 0.4 mm, marked as Layer B.

[0026] The graphene magnetic field emission layer in the te...

Embodiment 2

[0029] Electrodeposition is used to structure the graphene semiconductor base layer, and nitrogen doping is added by adding melamine during the electrodeposition process, which is directly transferred to the epoxy resin sheet and processed to form a conductive network layer of the structure. The active graphene monolayer rate in the electrodeposition solution reaches 90%, and the others are multi-layer graphene, forming the semiconductor base layer A.

[0030] The preferred metal compound for the transmission and interaction layer is TiO 2 Nano oxide layer, bonding resin is high density polyethylene material. The material ratio and basic parameters of the transmission interactive layer are as follows: 20 wt% transition metal compound powder, 40 wt% binder resin, 2 wt% dispersed coupling agent, 0.5 wt% conductive agent, the thickness of the transmission layer is 0.4 mm, marked as Layer B.

[0031] The graphene magnetic field emission layer in the terahertz wave source has a m...

Embodiment 3

[0034] The graphene slurry is printed into the ceramic substrate by screen printing, and the graphene is modified by introducing metal nano-elements by electroplating, and then processed to form a conductive network layer of the structure. The single-layer ratio in the graphene slurry reaches 99%, and the others are multi-layer graphene, which constitutes the semiconductor base layer A.

[0035] The preferred metal compound for the transmission and interaction layer is CaCO 3 The nano oxide layer and the bonding resin are low temperature resistant materials. The material ratio and basic parameters of the transmission interactive layer are as follows: 20 wt% transition metal compound powder, 40 wt% binder resin, 2 wt% dispersed coupling agent, 0.5 wt% conductive agent, the thickness of the transmission layer is 0.4 mm, marked For the B layer.

[0036] The graphene magnetic field emission layer in the terahertz wave source has a monolayer ratio of 80% of the material. Graphene...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Poweraaaaaaaaaa
Login to View More

Abstract

The invention discloses a terahertz wave radiation source based on a graphene material, relates to a terahertz emission source, and belongs to the technical field of terahertz waves. The basic main body material is graphene and a modified graphene material thereof. The main structure mainly comprises three parts, namely, a semiconductor base layer constructed by graphene and the modified graphenematerial thereof, a transition transmission interaction layer formed by a transition metal compound, and a graphene magnetic field emission layer formed by graphene and a composite material thereof. The invention provides a real terahertz wave source, the output frequency completely covers the terahertz wave range of 0.1-10THz, and terahertz waves with the average power of milliwatts can be emitted even under the 24V direct-current voltage. The radiation source is simple in structure, light, high in thin film degree, wide in working range, high in conversion efficiency far superior to that ofthe existing terahertz wave radiation source and completely suitable for large-scale production and application, and has far-reaching influence on expanding the cognitive dimension and depth in the fields of spectroscopy, material science, biology, medical imaging, environmental science, information science, astrophysics, plasma physics and the like.

Description

technical field [0001] The invention belongs to the field of terahertz wave technology, in particular to a novel terahertz radiation source based on graphene and its graphene composite material. Background technique [0002] Terahertz wave (THz), also known as T-ray (T-rays), is an electromagnetic radiation between millimeter wave and infrared, with a frequency in the range of 0.1THz to 10THz (wavelength 30μm to 3mm). The most cutting-edge field technology in electromagnetic spectrum research is also an almost undeveloped band. In recent years, with the advancement of science and technology and the deepening of research, it has been found that due to the special position of the spectrum of terahertz waves, the optical properties of its spectrum, such as emission, reflection and transmission, contain rich physical and chemical information, which can be used as Fourier It is a complementary tool to transform infrared spectroscopy and X-ray technology, especially for the devel...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01S1/02
CPCH01S1/02
Inventor 杨法杰解雪松
Owner 滨州市腾源电子科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com