Cerium-doped monomolecular layer tungsten disulfide film and preparation method thereof

A tungsten disulfide, monolayer technology, applied in chemical instruments and methods, tungsten compounds, inorganic chemistry, etc., can solve the problems of uncontrollable number of layers, low luminous efficiency, huge cost, etc., and achieve the effect of good crystal quality

Active Publication Date: 2020-01-10
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the prior art, the methods of metal-doped transition metal chalcogenide thin films and related methods have the following defects: 1. The alloy thin films obtained by vulcanization magnetron sputtering are obtained to obtain metal-doped transition metal chalcogenide thin films. The crystallinity of the film is poor, and it is generally a multi-molecular layer structure, and the number of layers is uncontrollable
for WS 2 For thin films, the monolayer structure is a direct bandgap semiconductor, while the multimolecular layer structure is an introductory bandgap semiconducto...

Method used

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  • Cerium-doped monomolecular layer tungsten disulfide film and preparation method thereof
  • Cerium-doped monomolecular layer tungsten disulfide film and preparation method thereof
  • Cerium-doped monomolecular layer tungsten disulfide film and preparation method thereof

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preparation example Construction

[0025] A typical embodiment of the present invention provides a method for preparing a cerium-doped monomolecular layer tungsten disulfide thin film, using a slide rail type single temperature zone tube furnace, using cerium oxalate as a dopant to prepare the tungsten disulfide thin film Doping includes the following steps:

[0026] Step 1, the substrate is cleaned and dried with ethanol and deionized water, and the substrate is polished flat SiO 2 / Si substrate or sapphire, mica and other substrates.

[0027] Step 2, use the slide rail type single temperature zone tube furnace to fix the WO 2.9 And mix cerium oxalate and WO according to mass ratio 1: (8~12) 2.9 placed in quartz boat 1 (see figure 1 ) and mixed with sodium chloride to form a mixture, the sodium chloride is used as a molten salt, and the mixing quality is WO 2.9 10~20% of the mass (mass ratio) of sodium chloride forms a mixture. The substrate is placed on the quartz boat 1, and the SiO 2 The side is oppos...

Embodiment 1

[0039] The first step, substrate cleaning: use ethanol and deionized water on SiO 2 / Si substrate is cleaned and dried;

[0040] The second step is to use the slide rail type single temperature zone tube furnace to fix the WO 2.9 The quality of 10mg, according to the mass ratio of cerium oxalate and WO 2.9 Placed in quartz boat 1 at a ratio of 1:10 (see figure 1 ) and doped with 2 mg of NaCl, the substrate was placed on a quartz boat, and the SiO 2 The face is opposite to the mixture;

[0041] In the third step, the quartz boat 1 is pushed into the quartz tube, and placed on the side edge of the heating furnace, and the quartz boat 2 with sulfur powder (see figure 1 ) is placed outside the heating furnace, and the distance between the quartz boat 1 and the quartz boat 2 is half of the size of the heating furnace;

[0042] The fourth step is to close the quartz tube and vacuumize for 5 minutes, and set the flow rate to 120 sccm after washing with high-purity argon;

[00...

Embodiment 2

[0052] The first step, substrate cleaning: use ethanol and deionized water on SiO 2 / Si substrate is cleaned and dried;

[0053] The second step is to use the slide rail type single temperature zone tube furnace to fix the WO 2.9 The quality of 8mg, according to the mass ratio of cerium oxalate and WO 2.9 Place in Quartz Boat 1 at a ratio of 1:8 (see figure 1 ) and doped with 1.0 mg of NaCl, the substrate was placed on the quartz boat 1, and the SiO 2 The face is opposite to the mixture;

[0054] In the third step, the quartz boat 1 is pushed into the quartz tube, and placed on the side edge of the heating furnace, and the quartz boat 2 with sulfur powder (see figure 1 ) is placed outside the heating furnace, and the distance between the quartz boat 1 and the quartz boat 2 is half of the size of the heating furnace.

[0055] The fourth step is to close the quartz tube and vacuumize for 5 minutes, and set the flow rate to 80 sccm after washing with high-purity argon;

[...

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Abstract

The invention relates to a cerium-doped monomolecular layer tungsten disulfide film and a preparation method thereof. Through a CVD system of a single temperature area, cerium oxalate and WO2.9 are placed in a quartz boat and doped with sodium chloride to form a mixture, the mixture is placed at the edge of one side of a heating hearth, and the quartz boat with placed sulfur powder is placed on the outer side of the heating hearth; a quartz tube is closed and vacuumized, and high-purity argon serves as carrier gas; the temperature of the temperature area is increased to 1050-1200 DEG C and kept, and the heating hearth is continuously moved in the period; annealing is conducted at the cooling rate of 50 DEG C per minute, and the temperature is decreased to 1040 DEG C and kept for 5-10 minutes; and then natural cooling is conducted to obtain the cerium-doped monomolecular layer tungsten disulfide film. By controlling various parameters related to the experimental process, the cerium-doped monomolecular layer tungsten disulfide film which is good in crystal quality and uniform is prepared.

Description

technical field [0001] The invention relates to the preparation of layered two-dimensional nanomaterials, in particular to a cerium-doped monomolecular layer tungsten disulfide film and a preparation method thereof. Background technique [0002] The layered transition metal chalcogenide tungsten disulfide combined by the interlayer van der Waals force has a suitable band gap, and this kind of material will change from the indirect band gap to the direct band gap with the change of the number of layers, that is, it can The adjustment of bandgap can be realized, so it can be used in optoelectronic devices and integrated circuits, but the inherent bandgap limits its optoelectronic application range, and its monomolecular film absorbs light poorly, which is not conducive to the production of optoelectronic devices such as photodetectors. Traditional semiconductors can be doped with various ions or atoms. Due to the different types of impurities or the amount of doping, the band ...

Claims

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Application Information

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IPC IPC(8): C01G41/00
CPCC01G41/00
Inventor 刘红军张福强苏少凯景芳丽杨栋程任彩霞
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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