Gold nanorod-lead sulfide quantum dot photodetector and preparation method thereof
A technology of gold nanorods and photodetectors, which is applied in the field of gold nanorods-lead sulfide quantum dot photodetectors and its preparation, can solve the problems of limiting large-scale applications, low carrier mobility, small light absorption cross section, etc. , to achieve the effect of performance improvement, detection degree improvement, and controllable process parameters
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[0038] The preparation method of the gold nanorod-lead sulfide quantum dot photodetector of the present invention comprises the following steps:
[0039] Preparation of lead sulfide quantum dot PbS QDs solution;
[0040] Preparation of gold nanorod Au NRs solution: prepare gold seed solution and growth solution, add gold seed solution to the growth solution to make gold nanorod Au NRs solution;
[0041] Preparation of gold nanorods-lead sulfide quantum dot photodetector: Spin-coat the lead sulfide quantum dot PbS QDs solution on the back gate substrate, then perform surface ligand exchange on the quantum dots, and spin-coat the quantum dots in the first pass After exchanging with the ligand, the gold nanorod Au NRs solution was spin-coated on the back-gate substrate, and then placed in a vacuum oven to obtain a gold nanorod Au NRs coating; The second pass of quantum dot spin coating and ligand exchange is carried out on the coating, and after completion, it is placed in a vac...
Embodiment approach
[0057] Such as figure 1 Shown is an embodiment of the gold nanorod-lead sulfide quantum dot photodetector of the present invention, the gold nanorod-lead sulfide quantum dot photodetector utilizes the gold nanorod-lead sulfide quantum dot light The detector is prepared by the method of preparation. The gold nanorod-lead sulfide quantum dot photodetector includes Au source 1, Au drain 2, silicon dioxide gate insulating layer 3, n-type heavily doped silicon chip 4 and gold nanorod-lead sulfide quantum dot Sandwich structure 5; the silicon dioxide gate insulating layer 3 is located on the n-type heavily doped silicon wafer 4, the Au source 1 and the Au drain 2 are located on the silicon dioxide gate insulating layer 3 to form a back gate substrate, gold The nanorod-lead sulfide quantum dot sandwich structure 5 is spin-coated on the back gate substrate, and is located between the Au source 1 and the Au drain 2; the gold nanorod-lead sulfide quantum dot sandwich structure 5 is two...
specific Embodiment
[0060] A method for preparing a gold nanorod-lead sulfide quantum dot photodetector, comprising the following steps:
[0061] Configure 50mg·mL -1 Preparation of lead sulfide quantum dot PbS QDs solution, specifically:
[0062] Preparation of cadmium sulfide quantum dot CdS QDs solution: add 0.28g reddish-brown cadmium oxide powder CdO, 1.5mL oleic acid OA, 18mL octadecene ODE into a three-necked flask, put in a rotating magnet, feed high-purity argon, and exhaust After exhausting the air, heat to 260°C for 20 minutes. After the solution becomes clear, remove the heat source and cool naturally. Add 360ul ammonium sulfide solution to 10mL oleylamine with a pipette gun, and mix well. When the temperature in the flask dropped to 30°C, quickly inject the prepared ammonium sulfide solution into the flask, mix evenly, stop stirring, and keep warm for 1 hour. Add excess ethanol to terminate the reaction, centrifuge, remove the supernatant, dry the remaining lemon-yellow cadmium su...
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