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A kind of preparation method of porous doped diamond-like carbon film

A diamond thin film and thin film technology, which is applied in the direction of metal material coating process, coating, gaseous chemical plating, etc., can solve the problems of slow deposition rate, long reaction time, unfavorable industrial application, etc., so as to improve deposition rate and uniformity sexual effect

Active Publication Date: 2021-11-19
惠州市三航无人机技术研究院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the chemical vapor deposition method of the current prior art to prepare diamond films usually has a very slow deposition rate and a long reaction time, which is not conducive to industrial application.

Method used

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Examples

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Effect test

preparation example Construction

[0018] A method for preparing a porous doped diamond-like carbon film, comprising the following steps: (1) coating a catalyst film on a substrate; (2) depositing a boron-doped diamond film on the surface of a substrate coated with a catalyst film, during the deposition process , the feed gas includes carbon source, hydrogen and dopant gas, the carbon source is methane, dimethyl ether and ethanol, wherein ethanol is gaseous, and the volume ratio of methane, dimethyl ether and ethanol is 3-6:0.8-2 : 0.5-1; the deposition time is 0.5-1h; (3) Calcining the obtained boron-doped diamond film in air atmosphere, the calcination temperature is 700-800 ℃, and finally a porous doped diamond-like film with a thickness of 3-6 μm is obtained . In the present invention, a catalyst film is coated on the substrate, and the carbon source in the present invention is a composition of three gases, which are respectively methane, dimethyl ether and ethanol. During the growth of the diamond film, me...

Embodiment 1

[0029] Catalyst preparation: use ultrasonic dispersion to disperse 1.2g of stannous sulfate in 50mL of distilled water to form a suspension; at room temperature, slowly drop 15mL of 30% hydrogen peroxide into the suspension while stirring vigorously; after a few minutes , transfer the obtained mixture to a polytetrafluoroethylene stainless steel autoclave, put the reaction vessel into it, keep it at 180°C for 12 hours, and then cool it down to room temperature naturally; the product is centrifuged, and the obtained solid is washed several times with distilled water, and the cleaned Take 50 mg of the final solid and dissolve it in 10 mL of 0.1M Ni(Ac) 2 In the aqueous solution, ultrasonically disperse for 1 hour, then carry out centrifugation, vacuum-dry the obtained solid, place it in a muffle furnace for calcination at 450° C. for 1 hour, and finally cool it down.

Embodiment 2

[0031] A method for preparing a porous doped diamond-like carbon film, comprising the following steps:

[0032] (1) The catalyst obtained in Example 1 is plated on a clean substrate to form a catalyst film by conventional coating method, and the thickness of the catalyst film is controlled within the range of 200-500nm;

[0033] (2) Deposit a boron-doped diamond film on the surface of a substrate coated with a catalyst film. During the deposition process, the gas introduced includes carbon source, hydrogen and doping gas. The carbon source is methane, dimethyl ether and ethanol, wherein Ethanol is gaseous, the volume ratio of methane, dimethyl ether and ethanol is 3:0.8:0.5, and methane, dimethyl ether and ethanol are fed respectively; and the flow rate of hydrogen is 300 sccm, the flow rate of doping gas is 20 sccm, carbon The source flow rate is 20 sccm; the substrate surface temperature is 700°C, the deposition pressure is 4kPa, and the deposition time is 1h;

[0034] (3) ...

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Abstract

The invention provides a method for preparing a porous doped diamond-like carbon film, comprising the following steps: (1) coating a catalyst film on a substrate; (2) depositing a boron-doped diamond film on the surface of a substrate coated with a catalyst film, and During the deposition process, the feed gas includes carbon source, hydrogen gas and dopant gas. The carbon source is methane, dimethyl ether and ethanol, wherein ethanol is gaseous, and the volume ratio of methane, dimethyl ether and ethanol is 3-6: 0.8‑2: 0.5‑1; the deposition time is 0.5‑1h; (3) Calcining the obtained boron-doped diamond film in the air atmosphere, the calcination temperature is 700‑800 ° C, and finally a porous doped film with a thickness of 3‑6 μm is obtained. diamond-like film. A method for preparing a porous doped diamond-like film of the present invention, by plating a catalyst film on the substrate, and the carbon source is composed of three kinds of raw materials, the deposition time is shortened to 0.5-1h, and a thickness of 3-3 can be obtained. The 6 μm porous doped diamond-like carbon film greatly improves the deposition rate, which is beneficial to industrial applications.

Description

technical field [0001] The invention belongs to the technical field of diamond film preparation, and in particular relates to a method for preparing a porous doped diamond-like film. Background technique [0002] Diamond is a special material, the four valence electrons of each carbon atom are represented by SP 3 The hybrid orbitals form bonds with the four nearest neighbor atoms, which have high hardness and very stable chemical properties. The semiconductor properties of diamond are also very prominent, and its crystal structure type is the same as that of silicon, so it can be used as a semiconductor material by doping. The most common method of depositing diamond on a certain substrate material is chemical vapor deposition (CVD), including hot wire chemical vapor deposition, microwave plasma chemical vapor deposition (MPCVD), combustion flame method, direct current plasma injection method, etc. . [0003] However, the chemical vapor deposition method in the prior art ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/27C23C16/02C23C16/56
CPCC23C16/0272C23C16/27C23C16/56
Inventor 朱雨包国文袁梅严肃静范永娴
Owner 惠州市三航无人机技术研究院
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