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Copper microalloy single-crystal bonding wire and preparation method thereof

A technology of micro-alloy and bonding wire, which is applied in manufacturing tools, heat treatment equipment, semiconductor/solid-state device manufacturing, etc. It can solve the problems of high processing equipment requirements, poor corrosion resistance, and high price, and achieve low equipment temperature upper limit requirements, Reduce production costs, cheap and effective

Inactive Publication Date: 2020-02-11
MLS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Similarly, Chinese Patent Document A Copper Alloy Single Crystal Bonding Wire for Microelectronic Packaging and Its Preparation Method (CN106992164A) is drawn into wire by adding a trace amount of silver, scandium, iron and titanium to the single crystal copper material, which overcomes the copper The surface of alloy bonding wire is easy to oxidize, poor corrosion resistance, reduced electrical conductivity, high hardness, and wire breakage after drawing.
However, some materials such as zirconium, rare earth, silver, scandium, and titanium in these patents have relatively high melting points, resulting in high requirements for processing equipment and high energy consumption; It has the disadvantages of high melting point and expensive price, which is very unfavorable for industrial production

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  • Copper microalloy single-crystal bonding wire and preparation method thereof

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Embodiment 1

[0040] A low-cost preparation of copper microalloy single crystal bonding wire according to the present invention includes the following components: aluminum, tin, zinc, phosphorus and copper; wherein, the content of the above components is according to the following weight ratio: aluminum 0.0003%, tin 0.0004% %, zinc 0.0008%, phosphorus 0.0003%, and the balance is copper, and the purity of copper is ≥99.9997, the purity of aluminum is ≥99.99, the purity of tin is ≥99.99, the purity of zinc is ≥99.99, and the purity of phosphorus is ≥99.99. Copper microalloy bonding wire has a single crystal structure.

[0041] The preparation method of the copper micro-alloy single crystal bonding wire comprises: preparing copper alloy ingot, preparing cast single crystal copper bus bar, rough drawing, heat treatment, fine drawing, surface cleaning, coiling and packaging; details are as follows:

[0042] (1) Prepare copper alloy ingots; put aluminum, tin, zinc, phosphorus and copper into a gr...

Embodiment 2

[0050] A low-cost preparation of copper microalloy single crystal bonding wire according to the present invention includes the following components: aluminum, tin, zinc, phosphorus and copper; wherein, the content of the above components is according to the following weight ratio: aluminum 0.0002%, tin 0.0003% %, zinc 0.0004%, phosphorus 0.0008%, and the balance is copper, and the purity of copper is ≥99.9997, the purity of aluminum is ≥99.99, the purity of tin is ≥99.99, the purity of zinc is ≥99.99, and the purity of phosphorus is ≥99.99. Copper microalloy bonding wire has a single crystal structure.

[0051] The preparation method of the copper micro-alloy single crystal bonding wire comprises: preparing copper alloy ingot, preparing cast single crystal copper bus bar, rough drawing, heat treatment, fine drawing, surface cleaning, coiling and packaging; details are as follows:

[0052] (1) Prepare copper alloy ingots: put aluminum, tin, zinc, phosphorus and copper into a gr...

Embodiment 3

[0060] A low-cost preparation of copper microalloy single crystal bonding wire according to the present invention includes the following components: aluminum, tin, zinc, phosphorus and copper; wherein, the content of the above components is according to the following weight ratio: aluminum 0.0003%, tin 0.0004% %, zinc 0.00012%, phosphorus 0.0005%, and the balance is copper. And the purity of copper is ≥99.9997, the purity of aluminum is ≥99.99, the purity of tin is ≥99.99, the purity of zinc is ≥99.99, and the purity of phosphorus is ≥99.99. Copper microalloy bonding wire has a single crystal structure.

[0061] The preparation method of the copper micro-alloy single crystal bonding wire comprises: preparing copper alloy ingot, preparing cast single crystal copper bus bar, rough drawing, heat treatment, fine drawing, surface cleaning, coiling and packaging; details are as follows:

[0062] (1) Prepare copper alloy ingots; put aluminum, tin, zinc, phosphorus and copper into a ...

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Abstract

The invention belongs to the technical field of microelectronic subsequent packaging procedures, and specifically discloses a copper microalloy single-crystal bonding wire and a preparation method thereof. The copper microalloy single-crystal bonding wire includes the following components: by mass ratio, 0.0001% to 0.0006% of aluminum, 0.0002% to 0.0008% of tin, 0.0005% to 0.00015% of zinc, 0.0003% to 0.00010% of phosphorus, and the balance of copper. The preparation method comprises: single-crystal copper microalloy casting, preparation of as-cast single-crystal busbar, rough drawing, heat treatment, fine drawing, surface cleaning, rolling and packaging processes. The copper microalloy single-crystal bonding wire of the present invention can improve the mechanical properties and oxidation resistance of copper through the addition of trace elements, thereby effectively improving the welding and use properties of copper. Moreover, since the melting points of the above elements are alllower than the melting point of copper, the equipment upper temperature limit is not highly required and low energy consumption is achieved during the melting and casting process, thereby helping to reduce the production cost. In addition, the above trace elements are common elements with large reserves, cheap and stable.

Description

technical field [0001] The invention belongs to the technical field of microelectronic back-end packaging process, and in particular relates to a copper microalloy single crystal bonding wire and a preparation method thereof. Background technique [0002] The bonding wire is an inner lead material with excellent electrical, thermal conductivity, mechanical properties and excellent chemical stability. It plays a role of wire connection in the LED package, connecting the chip surface electrode and the bracket. When the current is turned on When the current enters the chip through the bonding wire, the chip emits light, which is an indispensable core material in semiconductor production. Bonding copper wire is a product that has appeared in the LED and IC industries in recent years to replace traditional gold and silver wires. Since the prices of gold and silver have been rising continuously in the past two years, the product prices have been falling continuously at the same t...

Claims

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Application Information

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IPC IPC(8): H01L23/49H01L21/48B22D11/00C21D9/52C22C9/00C22C9/04C22F1/02C22F1/08
CPCH01L24/43H01L24/45B22D11/005B22D11/004C22F1/08C22F1/02C21D9/525C22C9/04C22C9/00H01L2224/45147H01L2224/43848
Inventor 刘志平姜许李晓
Owner MLS
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