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ZnGa2O4 ultraviolet detector and preparation method thereof

An ultraviolet detector and oxygen technology, applied in the field of ultraviolet detectors, can solve the problems of large dark current of ultraviolet detectors, low quality of thin-film crystals, poor device performance, etc., and achieve steep absorption cut-off edge, reduce oxygen defects, and low dark The effect of current

Inactive Publication Date: 2020-04-28
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

ZnGa prepared by these two methods 2 o 4 The quality of thin-film crystals is not high, and there are many defect states, which lead to large dark current, low photoresponsivity and poor device performance of the prepared UV detector.

Method used

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  • ZnGa2O4 ultraviolet detector and preparation method thereof
  • ZnGa2O4 ultraviolet detector and preparation method thereof
  • ZnGa2O4 ultraviolet detector and preparation method thereof

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preparation example Construction

[0048] The present invention also provides a method for preparing the above-mentioned ultraviolet detector, comprising the following steps:

[0049] A) Using organozinc compound as zinc source, organogallium compound as gallium source, and high-purity oxygen as oxygen source, ZnGa is deposited on the substrate surface by metal organic compound chemical vapor deposition 2 o 4 film;

[0050] B) in ZnGa 2 o 4 Negative photolithography is used to form an interdigitated electrode mask on the film material, and the colloidal mask is removed after sputtering metal gold to obtain a metal interdigitated electrode;

[0051] C) Press In grains on the interdigitated electrodes to obtain ZnGa with MSM structure 2 o 4 UV detector.

[0052] The present invention first utilizes metal organic compound chemical vapor deposition method to deposit ZnGa on the substrate surface 2 o 4 film. The specific method is as described above, and will not be repeated here.

[0053] get ZnGa 2 o 4...

Embodiment 1

[0060] Put the cleaned sapphire substrate into the MOCVD growth chamber, adjust the growth temperature to 850°C, and the pressure to 1×10 3 Pa. Diethylzinc was used as the zinc source, trimethylgallium was used as the gallium source, the carrier gas flow rate of the zinc source was 5 sccm, and the carrier gas flow rate of the gallium source was 10 sccm. The flow rate of oxygen is 300 sccm, which is much larger than that of zinc and gallium sources. Grow for 2 hours, turn off the organic source and oxygen, lower the substrate temperature to room temperature at 0.6°C / s, and obtain ZnGa with a thickness of about 300nm 2 o 4 film.

[0061] In ZnGa 2 o 4 On the film material, 50 pairs of interdigitated electrode masks with a pitch of 10 μm and a length of 500 μm were formed using negative resist lithography. The obtained sample was put into a small-sized coating machine, and metal gold was sputtered at a pressure of 8 Pa and a current of 6 mA. The colloidal mask is then remo...

Embodiment 2

[0068] Put the cleaned sapphire substrate into the MOCVD growth chamber, adjust the growth temperature to 900°C, and the pressure to 1×10 3 Pa. Diethylzinc was used as the zinc source, trimethylgallium was used as the gallium source, the carrier gas flow rate of the zinc source was 5 sccm, and the carrier gas flow rate of the gallium source was 10 sccm. The flow rate of oxygen is 300 sccm, which is much larger than that of zinc and gallium sources. Grow for 2 hours, turn off the organic source and oxygen, lower the substrate temperature to room temperature at 0.6°C / s, and obtain ZnGa with a thickness of about 300nm 2 o 4 film.

[0069] In ZnGa 2 o 4 On the film material, 50 pairs of interdigitated electrode masks with a pitch of 10 μm and a length of 500 μm were formed using negative resist lithography. The obtained sample was put into a small-sized coating machine, and metal gold was sputtered at a pressure of 8 Pa and a current of 6 mA. The colloidal mask is then remo...

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Abstract

The invention provides a ZnGa2O4 ultraviolet detector. The ZnGa2O4 ultraviolet detector comprises a substrate, a ZnGa2O4 thin film and a metal interdigital electrode which are sequentially compounded,wherein the ZnGa2O4 thin film is obtained by taking an organic zinc compound as a zinc source, an organic gallium compound as a gallium source and high-purity oxygen as an oxygen source and depositing on the surface of a substrate by utilizing a metal-organic compound chemical vapor deposition method. According to the invention, the ZnGa2O4 thin film is prepared by using a metal-organic compoundchemical vapor deposition method, and the prepared ZnGa2O4 thin film layer is enabled to have the characteristics of high crystallization quality, no phase splitting, steep absorption cut-off edge andthe like by increasing oxygen flow, increasing oxygen partial pressure and reducing oxygen defects, so that the ultraviolet detector containing the ZnGa2O4 thin film layer has relatively low dark current and relatively high responsivity.

Description

technical field [0001] The invention belongs to the technical field of ultraviolet detectors, in particular to a ZnGa 2 o 4 Ultraviolet detector and its preparation method. Background technique [0002] Ultraviolet detection technology has broad application prospects in military and civilian fields such as missile tail flame detection, flame sensing, air and water purification, and air-to-air communication. Ultraviolet radiation with a wavelength of less than 280nm can hardly be transmitted to the surface of the earth due to the blocking of the ozone layer above the earth, which is called solar blind ultraviolet radiation. The sun-blind ultraviolet detector working in the sun-blind band is not interfered by solar radiation, has higher sensitivity, and can be used in missile early warning and other aspects. In recent years, wide-bandgap semiconductor ultraviolet detectors are considered to be the third-generation ultraviolet detectors that can replace vacuum photomultiplie...

Claims

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Application Information

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IPC IPC(8): H01L31/032H01L31/0224H01L31/102H01L31/18
CPCH01L31/022408H01L31/032H01L31/102H01L31/18Y02P70/50
Inventor 刘可为韩冬阳申德振陈星张振中李炳辉
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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