Negative photoresist as well as preparation method and application thereof

A negative photoresist and active technology, which is applied in the field of photoresist, can solve the problems of miscibility of polymer compounds, brittle cracking of photoresist film, and reduced film-forming performance, so as to achieve not easy shrinkage and falling off, good Anti-thermal oxidation, high density effect

Active Publication Date: 2020-05-15
山东瑞博龙化工科技股份有限公司
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the inventors of the present invention have found that the introduction of benzene rings can easily lead to miscibility between polyme...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Negative photoresist as well as preparation method and application thereof
  • Negative photoresist as well as preparation method and application thereof
  • Negative photoresist as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0052] The third embodiment of the present invention provides a method for preparing the above-mentioned negative photoresist, which comprises a resin matrix, a photoinitiator, an active sensitizer, a free radical initiator, an acid diffusion inhibitor, and a reactive diluent Add to the solvent, stir to dissolve, and filter the dissolved solution with a filter of 0.5 μm or less, and the filtered solution is a negative photoresist.

[0053] The fourth embodiment of the present invention provides an application of the above-mentioned negative photoresist in liquid crystal displays and / or semiconductors.

[0054] In order to enable those skilled in the art to understand the technical solution of the present invention more clearly, the technical solution of the present invention will be described in detail below in conjunction with specific embodiments.

Embodiment 1

[0056] A negative photoresist, in parts by mass, consists of the following components: 20 parts of biscyclopentadienyloxyethyl acrylate, 10 parts of epoxy acrylic resin, polystyrene iodonium-hexafluoroantimonic acid 0.4 parts of salt, 0.01 parts of 9-phenylacridine, 0.01 parts of benzoyl peroxide, 0.02 parts of acid diffusion inhibitor, 2 parts of acryloyl morpholine, 3 parts of ethylene glycol ethyl acetate, 1,4-butanediol 5 servings.

[0057] The method for preparing above-mentioned negative photoresist comprises the following steps:

[0058] (1) Preparation of 1-methyl-3-(propyl-3-sulfonic acid group) imidazole sulfonate

[0059] Slowly add 8.2g of N-methylimidazole dropwise to 12.2g of 1,3-propane sultone, keep stirring in an ice bath for 1 hour, then raise to room temperature and continue stirring for 1 hour. After filtering, the precipitate is washed with ethyl acetate. Dissolve the washed precipitate in water, then slowly add 9.8g of sulfuric acid dropwise, react at 8...

Embodiment 2

[0068] A negative photoresist, in parts by mass, consists of the following components: 22 parts of dicyclopentadienyloxyethyl acrylate, 12 parts of epoxy acrylic resin, polystyrene iodonium-hexafluoroantimonic acid 0.45 parts of salt, 0.03 parts of 9-phenylacridine, 0.015 parts of benzoyl peroxide, 0.04 parts of acid diffusion inhibitor, 5 parts of acryloyl morpholine, 4 parts of ethylene glycol ethyl acetate, 1,4-butanediol 6 servings.

[0069] The method for preparing above-mentioned negative photoresist comprises the following steps:

[0070] (1) Preparation of 1-methyl-3-(propyl-3-sulfonic acid group) imidazole sulfonate

[0071] Slowly add 7.4g of N-methylimidazole to 11.0g of 1,3-propane sultone dropwise, keep stirring in an ice bath for 1h, then raise to room temperature and continue stirring for 1.2h, and filter the precipitate and wash it with ethyl acetate. Dissolve the washed precipitate in water, then slowly add 8.8g of sulfuric acid dropwise, react at 83°C for 1...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Molecular weightaaaaaaaaaa
Login to view more

Abstract

The invention discloses a negative photoresist as well as a preparation method and application thereof. The negative photoresist is prepared from the following components in parts by mass: 30 to 40 parts of a resin matrix, 0.4 to 0.5 part of a photoinitiator, 0.01 to 0.05 part of an active sensitizing aid, 0.01 to 0.02 part of a free radical initiator, 0.02 to 0.05 part of an acid diffusion inhibitor, 2 to 7 parts of an active diluent and 8 to 13 parts of a solvent, wherein the resin matrix is composed of dicyclopentadiene oxyethyl acrylate and epoxy acrylic resin, and the mass ratio of the dicyclopentadiene oxyethyl acrylate to the epoxy acrylic resin is (20-25): (10-15). The negative photoresist provided by the invention has good film-forming property, thermal stability and etching resistance.

Description

technical field [0001] The invention belongs to the field of photoresist, and relates to a negative photoresist, a preparation method and application thereof. Background technique [0002] The information disclosed in this background section is only intended to increase the understanding of the general background of the present invention, and is not necessarily taken as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to those skilled in the art. [0003] In the field of liquid crystal display and semiconductor, the photolithography process is a very common process, and its process steps include: coating photoresist, pre-baking, exposure, development and post-baking. The principle is to uniformly coat the photoresist composition on the surface of the substrate in the form of a thin film. When irradiated by ultraviolet rays or electron beams, the properties of the photoresist material will change, and then it will be dev...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G03F7/038G03F7/027
CPCG03F7/027G03F7/038
Inventor 郑万强姚慧玲国凤玲聂亮耿超群王鹏雁
Owner 山东瑞博龙化工科技股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap