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Polymer composite material with high dielectric constant and low dielectric loss and preparation method thereof

A technology of high dielectric constant and composite materials, applied in the field of dielectric polymer composite materials and their preparation, can solve the problems of low dielectric constant, increased dielectric loss, cumbersome preparation steps, etc., and achieves low cost and processability. Good, high breakdown strength effect

Active Publication Date: 2020-05-22
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the low dielectric constant of this type of filler, even if a high content of filler is added, the room for improving the dielectric constant of the composite material is very limited.
Another solution is to modify the surface of the high dielectric constant filler with a buffer layer with a dielectric constant between the polymer matrix and the filler, which can also effectively suppress the increase in dielectric loss, and the breakdown strength can be significantly improved , but the preparation steps of this method are cumbersome, and the uniformity of the coating on the filler is difficult to control, which will still lead to an increase in dielectric loss in the case of high filling (Adv.Mater.,2015,27(42):6658 -6663.)

Method used

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  • Polymer composite material with high dielectric constant and low dielectric loss and preparation method thereof
  • Polymer composite material with high dielectric constant and low dielectric loss and preparation method thereof
  • Polymer composite material with high dielectric constant and low dielectric loss and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] First add phenyltriethoxysilane (4mmol) to 10mL of anhydrous tetrahydrofuran and stir at room temperature until the monomer is completely dissolved, and then add 0.13 times the molar amount of tetramethylammonium fluoride based on phenyltriethoxysilane. The hydrate (TMAF, 0.52mmol) was dissolved in 3.5mL of anhydrous tetrahydrofuran, then the two solutions were mixed and stirred at room temperature for 24 hours to obtain a yellow solution. The solution was concentrated by rotary evaporation and dissolved with a small amount of chloroform, and then added dropwise to methanol The white powder product is obtained by sedimentation. The product is filtered, washed three times, and dried to obtain the final product—the peripheral cation is tetramethylammonium, and the R group is eight phenyl groups containing fluoride ion POSS (Ph 8 POSS@F - ) Molecules with a yield of 60.7%.

Embodiment 2

[0054] First add vinyltrimethoxysilane (1mmol) and phenyltrimethoxysilane (3mmol) with a molar ratio of 2 / 6 to 10mL of anhydrous tetrahydrofuran and stir at room temperature until the monomers are completely dissolved, and then combine the previous two monomers 0.16 times the molar amount of tetrabutylammonium fluoride trihydrate (TBAF, 0.64mmol) was dissolved in 4mL of anhydrous tetrahydrofuran, then the two solutions were mixed and stirred at room temperature for 36 hours to obtain a yellow solution. The solution was evaporated After concentration, it is dissolved in a small amount of chloroform, and then added dropwise to methanol to settle to obtain a white powder product. The product is filtered by suction, washed three times, and dried to obtain the final product—the peripheral cation is tetrabutylammonium, and the R group is 2 vinyl groups. , 6 phenyl groups containing fluoride ion POSS (Vi 2 Ph 6 POSS@F - ) Molecules with a yield of 51.1%.

Embodiment 3

[0056] First add vinyltriethoxysilane (1.5mmol) and phenyltriethoxysilane (2.5mmol) with a molar ratio of 3 / 5 to 10mL of anhydrous tetrahydrofuran and stir at room temperature until the monomer is completely dissolved. 0.5 times the molar amount of tetrabutylammonium fluoride trihydrate (TBAF, 2.0mmol) based on the two monomers was dissolved in 5mL of anhydrous tetrahydrofuran, then the two solutions were mixed and stirred at room temperature for 48 hours to obtain a yellow solution After the solution is concentrated by rotary evaporation, it is dissolved in a small amount of chloroform, and then added dropwise to methanol to settle to obtain a white powder product. The product is filtered by suction, washed three times, and dried to obtain the final product—the peripheral cation is tetrabutylammonium, and the R group is 3 vinyl groups, 5 phenyl groups containing fluoride ion POSS (Vi 3 Ph 5 POSS@F - ) Molecule with a yield of 49.0%.

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Abstract

The invention discloses a polymer composite material with a high dielectric constant and low dielectric loss and a preparation method thereof. The composite material is prepared by respectively carrying out melt blending and solution blending on self-made polyhedral oligomeric silsesquioxane containing fluorine ions and a thermoplastic polymer-based material, or blending the self-made polyhedral oligomeric silsesquioxane containing fluorine ions with a thermosetting polymer monomer or prepolymer or a thermosetting micromolecule under the action of a curing agent or an initiator, wherein the content of the polymer matrix material is 50-99% by mass, and the content of the polyhedral oligomeric silsesquioxane containing fluorine ions is 1-50% by mass. The polyhedral oligomeric silsesquioxanecontained in the composite material not only can effectively separate positive and negative charges, but also can firmly lock fluorine ions with negative charges, so the composite material can show arelatively high dielectric constant and extremely low dielectric loss and is improved in other properties. The preparation method is simple and efficient in process and easy for large-scale production.

Description

Technical field [0001] The invention belongs to the technical field of dielectric polymer composite materials and their preparation, and specifically relates to a polymer composite material with high dielectric constant and low dielectric loss and a preparation method thereof. Background technique [0002] Polymer-based dielectric materials have the characteristics of good processability, low cost, and high breakdown strength, and have a wide range of application values ​​in the field of electronic communications. However, compared to ceramic materials, polymer materials have a relatively low dielectric constant. These shortcomings greatly limit the further application of polymers as dielectric materials. Therefore, it is very necessary to develop polymer-based dielectric materials with high dielectric constants. [0003] Studies have found that conductive fillers (such as CNT, graphene, Ag nanoparticles, etc.) or ceramic fillers with high dielectric constant (such as BaTiO) are a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08L23/06C08L83/08C08L71/12C08L69/00C08L23/12C08L33/12C08L67/04C08L79/08C08L25/06C08L63/00C08L61/34C08J5/18C08G77/24C08G77/06
CPCC08G77/045C08J5/18C08J2323/06C08J2323/12C08J2333/12C08J2367/04C08J2369/00C08J2371/12C08J2379/08C08J2383/08C08J2467/04C08J2469/00C08J2483/08C08L25/06C08L61/34C08L63/00C08L2205/025C08L2205/03C08L83/08
Inventor 傅强韩迪邓伊依周岱林
Owner SICHUAN UNIV